FCRAM Devices suit mobile phone applications.
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Press Release Summary:
Mobile Fast Cycle RAM 128-bit Models MB82DBS04314C and MB82DBS08164C adopt burst mode operations complying with Common Specifications for COSMORAM Rev 3. They achieve maximum burst operation frequency of 108 MHz with single 1.8 V supply voltage, which satisfies memory requirement for mobile phone applications. Maximum standby current of 300 µA can be cut by user configurable power-down modes such as sleep mode and partial power down mode.
Original Press Release:
Fujitsu Introduces New 128Mbit Mobile FCRAM Complying With COSMORAM Rev.3
MUNICH, Germany, November 9 - Fujitsu Microelectronics Europe today announced the sample availability of a new 128Mbit Mobile Fast Cycle RAMTM device that adopts burst mode operations complying with Common Specifications for Mobile RAM (COSMORAM) Revision 3, for use in mobile phone applications. The device's high-speed performance and large density make it ideal for 3G mobile phone vendors looking to provide advanced applications.
The new 128Mbit device "MB82DBS04314C" and "MB82DBS08164C" achieves maximum burst operation frequency of up to 108MHz with a single 1.8V supply voltage, which satisfies the memory requirement for next generation mobile phone applications. The device provides a high data transfer rate as burst mode enables fast successive read/write operation through synchronisation with the system clock.
The maximum standby current of 300 microamps can be dramatically cut by user configurable power-down modes such as sleep mode and partial power-down mode. In addition, "MB82DBS04314C" is the first 128M PSRAM in the world that adopts a 32 bit address/data multiplexed bus to realise more than double the data transfer rate compared with existing products, by extension of the data bus width, and reduces the pin-count for easier customer board design.
These sample devices will be available in a monolithic package, and chip or wafer form for embedded applications, including use in multi chip package memory solutions.
This announcement underlines Fujitsu's commitment to the continued development and production of high value-added Application-Specific Memory products, in response to customer requirements.
Main Specifications
Part Number MB82DBS04314C MB82DBS08164C
Density 128Mbit
I/O Configuration x32 Address/Data x16
multiplex bus
Supply Voltage V(dd) between 1.7 and 1.95 V
Burst Operation Frequency 108MHz
Clock Access Time (Max) t(ac) 6ns
Random Access Time t(ce) 70 ns
(Max)
Standby Current (Max) I(dds1) 300 microamps
Power Down Current I(ddps) 10 microamps
(Max)
Trademark notice
FCRAM is a trademark of Fujitsu Ltd. All other company/product names mentioned herein are trademarks or registered trademarks of their respective companies.
Further information on Fujitsu Microelectronics Europe's products is available on our WWW address at: www.fme.fujitsu.com
Jim Bryant, Fujitsu Microelectronics Europe, Tel: +49-6103-690-0, E-mail: jim.bryant@fme.fujitsu.com or Joanna Muggeridge, JDK Marketing Communications, Tel: +44-870-787-9510, E-mail: joanna@jdk.co.uk
