STMicroelectronics
Suite 300
Burlington, MA 01803
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N-Channel MOSFET suits high-current DC/DC converters.
Model STD150NH02L will support drain to source voltage of 24 V and max drain current of 150 A. At these ratings, on-resistance is 0.0035 Ohm. At 10 V, typical RDS(on) is 0.003 Ohm and at 5 V it is 0.005 Ohm. Low gate charge helps reduce switching losses, and low thermal resistance facilitates current handling. MOSFET is manufactured using 0.6 Ã-µm process, which utilizes metallization and...
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Analog Switches are suited for portable instruments.
Quad (STG3699) and dual (STG3684) SPDT analog switches include multiple Single Pole Dual Trough cells and can work in bi-directional mode using 1.8 V compatible digital control pins. Housed in 3 x 3 mm QFN packages, they offer on-resistance of less than 0.5 Ohm and switching times of less than 300 ps. Characteristics include operating voltages of 1.65-3.6 V, support for current up to Ã-
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Mono Amplifiers drive 16-32 ohm speakers and earpieces.
Models TS419 and TS421 operate from supply of 2 V and draw max of 2.5 mA. Standby current consumption can be as little as 10 nA. Amplifiers are available with external gain configuration or with fixed gain of 6, 12, or 18 dB. Signal to noise ratio is typically 98 dB with 5 V supply. Offered in MiniSO-8 and DFN8 packages, amplifiers include On/Off click reduction circuitry and are suited for...
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Microcontrollers increase performance to 10 MIPS.
Turbo Ã-µPSD3300 8051-class embedded Flash microcontrollers feature dual independent banks of Flash memory, up to 32 Kbytes SRAM, and over 3,000 gates of programmable logic with 16 macrocells. Dual bank Flash architecture and programmable decode logic support true READ-while-WRITE concurrent access. Memory mapping is handled by integrated decoding PLD. Units include 16-bit Programmable...
Read More »Flash Memory reduces memory-cell size with 90 nm technology.
NOR Flash Memory Cell occupies silicon area of only 0.08 Ã-µmÃ-². Increased performance of on-chip peripheral CMOS circuitry enables data to be read from and written to memory array. Reduction in memory cell size corresponds to 40% reduction in die size for 128 Mbit devices, and more for larger memories. Applications include mobile phones, set-top boxes, personal computers, and automotive...
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Stereo Headphone Amplifiers operate down to 2 V.
Models TS486 and TS487 are 100 mW stereo headphone amplifiers with standby mode, which can be active low in TS486 or active high in TS487. Available with external gain configuration or fixed gain of 0, 8, or 12 dB, units include on/off click reduction circuitry. Signal to noise ratio is typically 103 dB with 5V supply, and cross-talk immunity is typically 83 dB at 1 kHz. Amplifers are suitable...
Read More »Software targets AMD64 technology processors.
PGIÃ-® Workstation 5.0 Fortran and C compilers are for workstations and servers based on 32-bit x86 or 64-bit AMD Opteron(TM) processors. It includes PGF77Ã-®, PGF90Ã-®, PGCCÃ-®, and PGC++(TM) compilers. PGDBGÃ-® parallel application debugger provides source-level debugging of code from shared libraries. Suite runs computing applications for complex modeling and simulations in...
Read More »Embedded Flash Memory utilizes 180 nm CMOS technology.
Embedded Flash Memory is suited for automotive applications, where it is used in System-On-Chip solutions for functions such as engine management, as well as for navigation and Infotainment. It supports ARM7, ARM9, and ST10, as well as multiprocessor architectures. Each Flash cell occupies just 0.37 Ã-µmÃ-². Macrocell allows customer-specified memory arrays up to 10 Mbits to be defined...
Read More »NVRAM Supervisor protects sensitive data.
Model M41ST87 combines Tamper Detect circuit with RAM Clear into supervisor for secure applications such as POS terminals and credit card machines. It also integrates NVRAM supervisor, serial real-time clock, and microprocessor supervisor all in 28-lead embedded crystal SOIC package with 32 KHz crystal. Programmable, battery-backed RTC section contains counters that track time and date. It is...
Read More »Serial Flash Memory stores data and parameter information.
Non-volatile, 8-Mbit M45PE80 offers fine granularity for applications that involve rapidly changing data and parameter information. Each page of 256 bytes can be individually erased and programmed, while write instruction offers ability to update data at byte level. One page of 256 bytes can be written in 12ms, programmed in 2ms, and erased in 10ms. Product fits in 8-pin Micro Leadframe Package,...
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