Light Emitting Diode offers 120-
Housed in 6.0 x 5.0 mm SMT package, Series LP6-TPP1-01 RGB LED incorporates AlGaInP and InGaN technologies and offers low thermal resistance of 130Ã-
Read More »Blue LEDs maximize light extraction efficiency.
Utilizing InGaN/SiC technology, 465 nm TBL Blue Series incorporates current distribution layer that requires single wire bond. Vertically structured chips are approximately 115 microns in height with luminous intensities up to 12,000 mcd. Units come in 5 mm round and elliptical packages with 15, 30, 60 x 35, and 110 x 50Ã-
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Thyristors suit medium voltage applications.
Manufactured on 100 mm diameter silicon wafer, 5.2 kV thyristor incorporates distributed gate architecture for di/dt capability. Unit has RMS current rating of 6,900 A and is encapsulated in fully hermetic, pressure contact package. Rated at 4,500 and 5,200 V respectively, Models K3503FC450 and K3503FC520 are encapsulated in 35 mm thick packages. Applications include DC drives, soft-starts, HVDC,...
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Harmonic Attenuator Module works with DC-DC converters.
High-boost Model VI-HAM is a universal ac input, PFC front-end module optimized for use with Series 375 DC-DC converters up to 600 W. Consisting of full-wave rectifier and high-frequency, zero-current switching boost converter, unit includes active inrush current limiting, over temperature and short circuit protection, control, and housekeeping circuitry.
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Schottky Diodes suit consumer electronics power supplies.
With maximum junction temperature of 175Ã-
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Surface-Mounted LED meets RoHS PB-free regulations.
Measuring 0.059 x 0.063 x 0.024 in., programmable RGB Model SMTC0606 employs 3 individually addressable LED die. Tri-chip design is comprised of single AlGaInP and 2 InGaN/SIC chip dies, featuring peak wavelengths of 635, 520, and 465 nm respectively. Lens appearance when off is water clear. Absolute maximum rating of forward current drive is 125 mA. Unit is encapsulated in epoxy blend to...
Read More »Synchronous Rectifier suits power switching applications.
Self-contained BERS(TM) NIS6111 couples high-speed comparator and MOSFET driver with power MOSFET to create diode with same forward-drop characteristics as MOSFET, eliminating heat sinks. It is capable of blocking up to 24 V and has typical forward voltage drop of 0.1 V at forward current of 20 A. Offered in 9 x 9 mm QFN package, Model NIS6111 can be used as oring diode used in servers and...
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TVS Diodes come in surface-mount and axial lead packages.
TVS Diode product line includes P4KE Series 400 W axial leaded product, SMAJ and P4SMA Series 400 W SMT products, and SMCJ and 1.5SMC Series 1,500 W SMT products. Offered in RoHS-compliant packaging, silicon avalanche diode solutions have voltage range of 5.0-550 V and protect electronic equipment from voltage/energy transients. Voltage clamping levels make them suited for computer equipment,...
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Laser Stack Arrays range from 790-980 and 1,435-1,570 nm.
Based on MOCVD-grown laser structure, micro-channel, water-cooled Cascade bars provide 50, 60, 80, or 100 W of CW power from 790-980 nm and 20 W of CW power from 1,435-1,570 nm. Stacks can include fast axis and slow axis collimation optics and can be configured horizontally or vertically, with max of 20 bars high or 6 bars across. Diode laser stack arrays are suited for direct-diode materials...
Read More »Fast Recovery Epitaxial Diodes are rated at 600 V.
Series DQ features extremely soft recovery, minimizing EMI, which eliminates need for snubbers. Thermally stable units are rated to 175Ã-
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Tekna Manufacturing LLC Announces NFPA 99 Compliant Model 7200 Multiplace Chamber
Tekna is a leader in Monoplace and Multiplace Hyperbaric Chambers for Hyperbaric Oxygen Therapy (HBOT), offering products that set the standard for quality and innovation. Our new 7200 series of multiplace chambers is a state-of-the-art system that integrates advanced engineering with a plethora of features and options making it the industry's premier HBOT system. To learn more, see our video.
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