OSI Optoelectronics Provides Optimized Nd:YAG Photodiodes for Military/Aerospace Applications
Hawthorne, Calif. – August 15, 2018 - OSI Optoelectronics (OSIO), an OSI Systems Company, offers high-response N-on-P YAG series of photodetectors that are optimized at 1060 nm for critical military and aerospace sensing applications. The YAG laser light wavelength combines with low capacitance, for high-speed operation and extremely low noise, making it useful for sensing low-light...
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New Silicon Avalanche Photodiodes Feature Low Currents and Higher Sensitivities
New Silicon avalanche photodiodes are available in custom and standard sizes. They can be purchased in volumes from prototype to OEM. The photodiodes have low-level light and pulse detections of wavelengths between 400 nm and 1100 nm. They have either a 230 µm or 500 µm active diameter, as well as optical sensitivity optimizations for 800 nm or 905 nm peak responses. They feature extremely fast...
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New VEMD8080 PIN Photodiode Offers Low Capacitance for Precise Signal Detection
Vishay’s VEMD8080 PIN Photodiode is available in rectangular 4.8 mm x 2.5 mm surface-mount package with 0.48 mm profile. Featuring ± 65° angle of half-sensitivity and 950 nm wavelength of peak sensitivity, unit can be operated in -40°C to +85°C temperature range in 350 nm to 1100 nm spectrum range. The Photodiode offers a reverse light current of 28 µA and dark current of 0.2 nA. Unit is...
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Series 9 Avalanche Photodiodes Offer High Sensitivity at 905 nm
Series 9 Avalanche Photodiodes are offered in TO housings or flat ceramic SMD packages. Units come with internal amplifier that is optimally matched to photodiode for high signal-to-noise ratios. Photodiodes are suitable for applications such as driver assistance systems, drones, safety laser scanners, 3D-mapping and robotics. Units are available as single element, linear and matrix arrays and...
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An Operations Manager's Guide To The Mobile Connected Factory of Tomorrow
This white paper provides an overview of mobile technology for managing your manufacturing facility, while also discussing the advantages of being an early adopter.
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Thin-Film Filter Photodetectors are operated in a temperature range of -10 °C to +40 °C.
Thin-Film Filter Photodetectors are available in SXUV100TF135 and SXUV100TF135B versions. Units offer 100 mm² active areas and can detect between 12 nm and 18 nm. Products provide typical responsivity of 0.09 A/W at 13.5 nm and are suitable for laser power monitoring, semiconductor photolithography and metrology system applications. Photodetectors are operated in a temperature range of -20 °C...
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UV-Enhanced Silicon Photodiodes are used for low-light-level detection.
UV-Enhanced Planar Diffused Silicon Photodiodes are available in UVD planar diffused and UVE planar diffused IR suppressed models. Units are offered in various sizes and footprints and in metal or ceramic packages. Products are suitable for medical instrumentation, pollution monitoring, spectroscopy, fluorescence, water purification and UV exposure meter applications. These devices can be...
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Extended InGaAs 2 Micron Photodiodes with High Current Handling Find Multiple Applications for Characterizing Ultra-Fast Mode-Locked Fiber Lasers
October 23rd 2017 – Ewing, NJ – Discovery Semiconductors high speed, extended InGaAs 2 micron photodiodes are increasingly being used for characterizing ultra-fast, mode-locked fiber laser at multiple wavelengths ranging from 1550 nm to 2100 nm. According to Dr. Grzegorz Sobon, at Wroclaw University of Science and Technology in Wroclaw, Poland, “We are using the DSC2-50S photodetectors for...
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Mid IR LEDs for NDIR and Moisture Content
Electro Optical Components introduces optoelectronic devices for the mid-infrared spectral range. Products include a wide range of Light Emitting Diodes (LEDs), LED arrays and spectral matched Photodiodes (PD) covering the spectral range from 1600 to 5000 nm. Applications they are ideally suited for are: NDIR gas detection Film moisture content monitoring Low power consumption for portable...
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NXIR-5C Photodiode meets RoHS and REACH standards.
Offering a sensitivity of 0.62 A/W at 850 nm and 0.35 A/W at 1064 nm, NXIR-5C NIR Photodiode are housed in 4.7 mm x 4.9 mm ceramic carrier surface-mount device package with 5 mm^2 active area. Featuring 320 nm to 1100 nm spectral response, unit has 1nA dark current, 5 pF capacitance at 10 volts, and greater than 100 MΩ shunt resistance. Operated in -40°C to +125°C, photodiode is available on...
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VEMD5080X01 PIN Photodiode features wettable flanks.
Available in 5 mm x 4mm top view SMT package with 0.9 mm profiles, VEMD5080X01 PIN Photodiode is used in for signal detection in wearable device, medical, industrial and automotive applications. Operating in -40°C to +110°C temperature range with ± 65° angle of half-sensitivity, unit provides 7.5 mm² radiant-sensitive area with 45 µA and 0.2 nA of reverse light and dark current...
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Tekna Manufacturing LLC Announces NFPA 99 Compliant Model 7200 Multiplace Chamber
Tekna is a leader in Monoplace and Multiplace Hyperbaric Chambers for Hyperbaric Oxygen Therapy (HBOT), offering products that set the standard for quality and innovation. Our new 7200 series of multiplace chambers is a state-of-the-art system that integrates advanced engineering with a plethora of features and options making it the industry's premier HBOT system. To learn more, see our video.
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