Synchronous Rectifier suits power switching applications.
Press Release Summary:
Self-contained BERS(TM) NIS6111 couples high-speed comparator and MOSFET driver with power MOSFET to create diode with same forward-drop characteristics as MOSFET, eliminating heat sinks. It is capable of blocking up to 24 V and has typical forward voltage drop of 0.1 V at forward current of 20 A. Offered in 9 x 9 mm QFN package, Model NIS6111 can be used as oring diode used in servers and telecom equipment.
Original Press Release:
ON Semiconductor Introduces Industry's First Self-Contained Synchronous Rectifier for Power Switching Applications
BERS(tm) ICs (Better Efficiency Rectification System(tm)) improve efficiency, lowers junction temps and simplifies designs
Phoenix, Arizona - Jan. 20, 2005 - ON Semiconductor, Inc. (Nasdaq: ONNN), a leading global supplier of advanced power management solutions, today announced the release of the industry's first self-contained synchronous rectifier. The integrated solution relieves designers of the difficult task of achieving high power density using discrete components.
"Achieving acceptable efficiency levels in today's demanding synchronous rectification designs is hard work." said Sue Nee, ON Semiconductor product marketing manager for Application Specific Products. "Typical designs require many discrete components and usually an extended design time to get the system just right. With the introduction of the NIS6111, designers can overcome these hurdles quickly and easily. The simplicity and flexibility of the NIS6111 allows it to be dropped into existing power supply designs with only minor layout changes."
About the NIS6111
The patented NIS6111 is a high speed, high efficiency hybrid rectifier that couples a high speed comparator and MOSFET driver with a power MOSFET to create a diode with the same forward-drop characteristics as a MOSFET. The low forward drop and fast switching of the NIS6111 improve efficiency and eliminate bulky heat sinks. They do this by lowering junction temperatures for secondary rectification in flyback or resonant topology switching power supplies. Furthermore, because it does not have to be ground referenced, it can easily be used as a simple, two terminal replacement for lossy rectifiers in switching power supplies.
The NIS6111 is capable of blocking up to 24 volts (V) and has a typical forward voltage drop of 0.1 V at a forward current of 20 amperes. Versions that offer 60 V and 100 V blocking will be added to the BERS family later in 2005.
In addition to switching power supply designs, the NIS6111 will do equally well as an ORing diode used in highly available products like servers and telecom equipment. It provides a solution much less susceptible to pc board layout problems, such as oscillations or slower fault recovery speeds, than a discrete ORing controller and MOSFET. Also, additional MOSFETs can be added to the NIS6111 to increase its power handling capability.
It can work in conjunction with primary side PWM controllers such as NCP1207, NCP1651 and others to provide ease of design and affordability.
The NIS6111 is offered in a 9 mm x 9 mm QFN package and is priced at is $2.99 per unit in 10,000-unit quantities. Demo boards are available now.
About ON Semiconductor
With its global logistics network and strong portfolio of power semiconductor devices, ON Semiconductor (Nasdaq: ONNN) is a preferred supplier of power solutions to engineers, purchasing professionals, distributors and contract manufacturers in the computer, cell phone, portable devices, automotive and industrial markets. For more information, please visit ON Semiconductor's website at www.onsemi.com.
ON Semiconductor and the ON Semiconductor logo are registered trademarks of Semiconductor Components Industries, LLC. All other brand and product names appearing in this document are registered trademarks or trademarks of their respective holders. Although the company references its website in this news release, such information on the website is not to be incorporated herein.
