Photodiodes

Photodetectors offer custom chip packaging.
Photodiodes

Photodetectors offer custom chip packaging.

Featuring spectral sensitivity of 400–1,100 nm, Silicon Detectors are suited for applications requiring high speed, consistency, and reliability, such as optical communications, medical diagnostics, barcode readers, and missile guidance. Die can be placed in variety of packages, from metal can TO-5, TO-8, and TO-18, to surface mount COB, flex circuits, and standard 3 mm and 5 mm plastic...

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Near-Infrared Detectors support back-facet laser-monitoring.
Photodiodes

Near-Infrared Detectors support back-facet laser-monitoring.

Featuring active area of 0.36 mmÂ-² and 0.70 mm², respectively, NXIR-RF36 and NXIR-RF70 Detectors are suited for integration with semiconductor lasers, including Fabry-Perot, distributed feedback, and vertical-cavity surface-emitting lasers. Devices have responsivity of 0.65 A/W at 850 nm, capacitance of 5 pF at 0 V, and shunt resistance greater than 200 MΩ. Suitable for use...

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Silicon Photodiodes minimize dead areas on edges of devices.
Photodiodes

Silicon Photodiodes minimize dead areas on edges of devices.

Featuring single-channel, back-illuminated design, BI-SMT Photodetector Series is suited for X-ray inspection, computed tomography, and general industrial tasks. Model 33BI-SMT features active area of 5.76 mmÂ-²Ã‚  and dimensions of 2.4 x 2.4 mm, while Model 55BI-SMT has 19.36 mm² active area and 4.4 x 4.4 mm dimensions. With 9.4 x 9.4 mm dimensions,...

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Photodiode features 4.1 mm diameter active area.
Photodiodes

Photodiode features 4.1 mm diameter active area.

With responsivity under test conditions at 254 nm, Model UVG12 features minimum A/W of 0.105, typical response of 0.115, and max response of 0.125. Photodiode is designed for detection from 193–400 nm and operates at 100% internal quantum efficiency in UV and visible regions. Extremely stable, 13 mmÂ-² device exhibits less than 2% drop in responsivity after exposure to...

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Silicon Avalanche Photodiodes suit extreme low light conditions.
Photodiodes

Silicon Avalanche Photodiodes suit extreme low light conditions.

Suited for applications withÂ- 400–1,100 nm wavelength, Silicon Avalanche photodiodes (Si APDs) are optical detectors that come in hermetic TO Cans and feature internal gain mechanism, rise times as low as 300 psec, and high sensitivity in NIR region. Optical sensitivity peak is optimized for 800 or 905 nm, and standard versions are available with 200, 500, and 800 µm...

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IR Emitter/PIN Photodiode suit oximeter detector applications.
Photodiodes

IR Emitter/PIN Photodiode suit oximeter detector applications.

Measuring 6 x 4.8 x 1.1 mm each, IRR60-48C/TR8 SMT Infrared Emitting Diode, together with PD60-48C/TR8 PIN Photodiode feature optimized wavelengths of red 660 nm and infrared 905 nm, enabling accurate oximeter diagnosis. Infrared 905 nm can also be customized upon request to 940 nm or 910 nm. Both IRR60-48C/TR8 and PD60-48C/TR8 are discrete designs which allow feasibility on use, no matter if...

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Photodiodes

High-Speed Photoreceiver features variable gain.

Using InGaAs or Si photodiodes followed by variable gain transimpedance amplifier, Model OE-300 covers 320–1,700 nm wavelength range. Unit has switchable gain from 102 to 108 V/A giving precise measurements within wide dynamic range from nanowatts up to 10 mW optical power. Using free space input option, OE-300 works with standard optical accessories like tubes and lenses. FC and SMA optical...

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Photodiodes

Excelitas Technologies® Exhibits Expanded Portfolio of Innovative Technology Solutions at Photonics West 2015

SAN FRANCISCO, CA – Excelitas Technologies Corp., a global technology leader focused on delivering innovative, customized photonics solutions today announced today it is exhibiting a broad array of its products at the SPIE Photonics West 2015 conference, which takesÂ-  place February 10-12 at The Moscone Center in San Francisco, California.  The event marks the first time both...

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Photodiodes

Marktech Optoelectronics to Introduce Photodetectors at Photonics West

New detector products join Marktech’s wide range of emitter sensors ranging from deep UV 280nm to 1720nm short wave infrared and InGaAs/InP epitaxial wafers from 1.0um to 2.6um. Latham, NYÂ- – Marktech Optoelectronics is set to introduce its new line of photodetectors at the SPIE Photonics West Conference to be held in San Francisco’s Moscone Center February 7-12, 2015. Marktech’s...

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