Photodiodes

InGaAs Quadrant Detectors have large active area.
Photodiodes

InGaAs Quadrant Detectors have large active area.

FCI-InGaAs-QXXX photodiodes have 4 separate active areas, which come in 1 and 3 mm dia. Suited for position sensoring, beam alignment, and beam profiling, products offer responsivity from 1100-1620 nm. Features include stability over time and temperature and response time necessary for high-speed or pulse operation. InGaAs Quad photodiodes are available in TO-5 or TO-8 cans with broadband...

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Infrared Photodiodes feature miniature custom housings.
Photodiodes

Infrared Photodiodes feature miniature custom housings.

InGaAs Photodiodes offer active area sizes of 120, 300, 400, and 500 Â-µm. IR-sensitive units have responsivity of 1310-1550 nm and operate in spectral range from 900-1700 nm. Model FCI-InGaAs XXX-CCER is mounted on gull wing ceramic substrates with glass windows. Model FCI-InGaAs XXX-WCER features monitor photodiodes mounted on metallized ceramic substrates. Angled surface of 5Â-

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Linear Photodiode Array suits sensing applications.
Photodiodes

Linear Photodiode Array suits sensing applications.

Hybridized with 1 Megohm gain transimpedance amplifiers, 100 element photodiode array utilizes opaque polymer coating process to create mask that blocks any light outside pixels. Mounted on 1 PCB, each detector element is connectorized to TIA using AC coupling scheme to automatically filter out signals due to DC ambient light levels. Nominal specifications include pixel size of 0.045 x 0.050 mm...

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Photodiode suits high speed fiber optics applications.
Photodiodes

Photodiode suits high speed fiber optics applications.

EFD Series InGaAs PIN photodiode, with dark current range of 0.1 to 0.3 nA (when VR = 5 V), has sensitive areas from 0.025 to 3 mm when detecting incoming light. It responds to near IR to run longer fiber optic cables. Suitable for communications to medical sensors, responsivity is rated at 0.9 A/W, and typical bandwidth is 1.5 GHz. EFD Series comes in TO-46 metal can packaging, but can be...

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Photodiode monitors output of semiconductor lasers.
Photodiodes

Photodiode monitors output of semiconductor lasers.

Silicon PIN photodiode monitors short wavelength lasers, such as 980 nm diodes used for EDFA pumping. It is supplied as bare die soldered to ceramic block, facilitating integration of photodiode together with laser into standard telecommunications packages. Soldering avoids use of organic adhesives, which can outgas over time, eventually contaminating source. Active area is 0.7 x 1.0 mm.

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Photodiodes

Preamplifier uses avalanche photodiodes.

C30659-Series includes low noise Gasfet front end, avalanche photodiodes, and hybrid preamplifier in single modified 12-lead TO-8 package. Avalanche photodiodes can be either silicon or indium gallium arsenide and emitter follower is used as output buffer stage. It has strong response between 400 and 1700 nanometers. To obtain wideband characteristics, output of preamp should be ac coupled to...

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Photodiode Arrays are designed for scanning applications.
Photodiodes

Photodiode Arrays are designed for scanning applications.

EPA-4400 Series consists of 8, 16, and 32 element photodiode scintillator arrays featuring high sensitivity of 400-1080 wavelength and uniform response of 0.30 A/W. Element size is 1.49 x 3.61 mm with element spacing of 1.587 mm. Arrays are suitable for X-ray and scanning applications such as spectroscopy, security systems, and baggage scanners.

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