Photodiodes

Photodiode features 4.1 mm diameter active area.
Photodiodes

Photodiode features 4.1 mm diameter active area.

With responsivity under test conditions at 254 nm, Model UVG12 features minimum A/W of 0.105, typical response of 0.115, and max response of 0.125. Photodiode is designed for detection from 193–400 nm and operates at 100% internal quantum efficiency in UV and visible regions. Extremely stable, 13 mmÂ-² device exhibits less than 2% drop in responsivity after exposure to...

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Silicon Avalanche Photodiodes suit extreme low light conditions.
Photodiodes

Silicon Avalanche Photodiodes suit extreme low light conditions.

Suited for applications withÂ- 400–1,100 nm wavelength, Silicon Avalanche photodiodes (Si APDs) are optical detectors that come in hermetic TO Cans and feature internal gain mechanism, rise times as low as 300 psec, and high sensitivity in NIR region. Optical sensitivity peak is optimized for 800 or 905 nm, and standard versions are available with 200, 500, and 800 µm...

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IR Emitter/PIN Photodiode suit oximeter detector applications.
Photodiodes

IR Emitter/PIN Photodiode suit oximeter detector applications.

Measuring 6 x 4.8 x 1.1 mm each, IRR60-48C/TR8 SMT Infrared Emitting Diode, together with PD60-48C/TR8 PIN Photodiode feature optimized wavelengths of red 660 nm and infrared 905 nm, enabling accurate oximeter diagnosis. Infrared 905 nm can also be customized upon request to 940 nm or 910 nm. Both IRR60-48C/TR8 and PD60-48C/TR8 are discrete designs which allow feasibility on use, no matter if...

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Photodiodes

High-Speed Photoreceiver features variable gain.

Using InGaAs or Si photodiodes followed by variable gain transimpedance amplifier, Model OE-300 covers 320–1,700 nm wavelength range. Unit has switchable gain from 102 to 108 V/A giving precise measurements within wide dynamic range from nanowatts up to 10 mW optical power. Using free space input option, OE-300 works with standard optical accessories like tubes and lenses. FC and SMA optical...

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Photodiodes

Excelitas Technologies® Exhibits Expanded Portfolio of Innovative Technology Solutions at Photonics West 2015

SAN FRANCISCO, CA – Excelitas Technologies Corp., a global technology leader focused on delivering innovative, customized photonics solutions today announced today it is exhibiting a broad array of its products at the SPIE Photonics West 2015 conference, which takesÂ-  place February 10-12 at The Moscone Center in San Francisco, California.  The event marks the first time both...

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Photodiodes

Marktech Optoelectronics to Introduce Photodetectors at Photonics West

New detector products join Marktech’s wide range of emitter sensors ranging from deep UV 280nm to 1720nm short wave infrared and InGaAs/InP epitaxial wafers from 1.0um to 2.6um. Latham, NYÂ- – Marktech Optoelectronics is set to introduce its new line of photodetectors at the SPIE Photonics West Conference to be held in San Francisco’s Moscone Center February 7-12, 2015. Marktech’s...

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Photodiodes

Photodiode provides 331 mm² of active area.

Housed in windowless ceramic package with 22.05 x 15.85 mm rectangular active area, Model SXUV300C detects energy from extreme ultraviolet wavelengths of 1–1,000 nm. Device offers sizeable surface for reflective scatter measurements of high-powered UV lasers, and provides stable responsivity even after prolonged exposure to high-powered UV radiation.

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Automotive-Grade PIN Photodiodes have 7.5 mm² sensitive area.
Photodiodes

Automotive-Grade PIN Photodiodes have 7.5 mm² sensitive area.

High-speed silicon PIN photodiodes VEMD5010X01 and VEMD5110X01 come in top-view, SMT packages measuring 5Â- x 4 x 0.9 mm. For detection of visible and NIR radiation, VEMD5010X01's free cavity is filled with clear epoxy for 430–1,100 nm sensitivity range. For 790–1,050 nm IR applications, VEMD5110X01 utilizes black daylight filtering epoxy and is matched with 850–940...

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Responsivity-Optimized Photodiode features 331 mm² active area.
Photodiodes

Responsivity-Optimized Photodiode features 331 mm² active area.

Able to detect energy from extreme UV wavelengths of 1–1,000 nm, SXUV300C features 22.05 x 15.85 mm active area. This offers sizable surface for reflective scatter measurements of high-powered UV lasers. Providing stable responsivity even after prolonged exposure to high-powered UV radiation, product comes in windowless package that enables responsivity to 1 nm and is suited for use in new or...

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Photodiode offers 5 mm² active area in quadrant configuration.
Photodiodes

Photodiode offers 5 mm² active area in quadrant configuration.

Resistant to radiation damage from UV lasers, SXUVPS4 multi-element detector can withstand 4 days of exposure to 10 eV 1016 photons/cmÂ-² without degradation in responsivity. Photodiodes, supplied in TO-5 package that facilitates integration into new or existing systems, provide 0.125–0.02 A/W over 10–200 nm wavelength range. Circular detection surface is optimized for precise alignment...

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