Vishay
Malvern, PA 19355
Current Sensing Resistors operate from -65 to +275-
Available in 3921 and 5931 case sizes, surface-mount Power Metal StripÃ-® Models WSLT3921 and WSLT5931 are 3 and 5 W resistors that incorporate solid metal iron-chrome alloy resistive element with low TCR of less than 20 ppm/Ã-
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EMI Filters offer capacitance of 20 and 40 pF.
Housed in LLPXX13 leadless package with 0.6 mm profile, VEMI Series comes in 4-, 6-, and 8-channel models with typical cut-off frequencies of 130 and 240 MHz and resistance of 100 W. Compliant with RoHS 2002/95/EC and WEEE 2002/96/EC, filters provide protection in portable electronics for mobile computing, mobile communications, industrial, and medical applications.
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Power Potentiometer offers 25 mm diameter.
Model PE60 provides resistance ranges from 1W to 1MW, dielectric strength of 2,500 Vrms, max operating torque of 4.3 oz.-in., and end stop torque of 6 lb.-in. Cermet element features 6 W power rating at 50Ã-
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IR Receivers suit noisy environments and short burst codes.
Available in 5 series and 3 pin configurations, AGC3 IR Receivers offer resistance to ESD, shielding against EMI, and immunity against ambient light, making them suited for remote control, data transmission, and light barrier applications. Units include photo detector and preamplifier circuit, mounted within 3-pin epoxy-encapsulated module. Specified for operation from 2.5-5.5 V with transmission...
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Schottky Diodes offer Tj Max of 175-
Available in 8 models, 100 V Schottky Diode Gen 5.0 silicon platforms offer typical forward voltage drop from 0.55 V at 8 A to 0.61 V at 30 A and typical reverse leakage from 1-5.5 mA at 125Ã-
Read More »LDO Controller is optimized for driving n-channel MOSFETs.
With adjustable and fixed 1.2 and 1.5 V output voltages, Model SiP21301 LDO controller uses external n-channel MOSFETs to provide drop-out voltages of less than 50 mV with 80% efficiency. Operating from 2.5-0.65 V, it delivers 1 to 7 A of current with 1% output voltage accuracy. Unit features programmable inrush current protection on start up, short-circuit protection, thermal shutdown,...
Read More »Monolithic IC combines Schottky diode with power MOSFET.
Suited for dc-to-dc conversion applications, Siliconix Si4642DY SkyFET(TM) single-chip device combines 30 V breakdown voltage with MOSFET on-resistance of 3.75 mW at 10 V gate drive. Unit eliminates parasitic inductances, and can be used as low-side power MOSFET in synchronous buck converters for notebook core voltage and VRM applications, graphic cards, point-of-load power conversion, and...
Read More »SPDT Switches offer up to -
Offering 3.6 W typical and 4.2 W maximum on-resistance with flatness of 0.4 W typical, Models DG469 and DG470 are rated for 120 mA of continuous current. Fully specified to operate with dual supplies at Ã-
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ESD Diode Protection Arrays suit space-limited areas.
Supplied in 1 x 1 x 0.4 mm LLP1010-5L package that complies with WEEE and RoHS standards, VESD05A4A-HS4 and VESD09A4A-HS4 provide ESD data port protection in mobile electronics. Devices differ in max working range (5 and 9 V), load capacitance (6.5 and 12 pF), surge current, and typical leakage current, but both Pb-free products provide transient protection for 4 data lines as per IEC 61000-4-2...
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Meter Shunt Resistor offers 3 W of power and low resistance.
Supplied in 5515-size package, RoHS-compliant WSMS5515 Power Metal StripÃ-® meter shunt resistor features 4-terminal (Kelvin) connection design and all-welded construction. Processing technique produces resistance values from 100-500 Ã-µW, which provides accuracy in current meter shunt applications for electronic power meters. Other characteristics include inductance values of less than 5...
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