Vishay
Malvern, PA 19355
Vishay Intertechnology at virtual electronica 2020
New Component Technologies Under a New Brand Identity MALVERN, Pa. — Oct. 28, 2020 — Vishay Intertechnology, Inc. (NYSE: VSH) will feature new component technologies at virtual electronica 2020, taking place Nov. 9-12. Under its new brand identity, The DNA of tech™, the company's virtual exhibit will showcase the latest additions to its broad portfolio of discrete semiconductors and passive...
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Vishay Intertechnology at virtual electronica 2020
New Component Technologies Under a New Brand Identity MALVERN, Pa. — Oct. 28, 2020 — Vishay Intertechnology, Inc. (NYSE: VSH) will feature new component technologies at virtual electronica 2020, taking place Nov. 9-12. Under its new brand identity, The DNA of tech™, the company's virtual exhibit will showcase the latest additions to its broad portfolio of discrete semiconductors and passive...
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Latest Inductor from Vishay is RoHS-Compliant
Available in 10 mm. by 6 mm. by 10 mm. 4024 case size that enables high current density, while its vertical-mount design saves on board space. Features high temperature operation to +155 °C that is optimized for energy storage in DC/DC converters up to 5 MHz. Offers high resistance to thermal shock, moisture, and mechanical shock, and handles high transient current spikes without saturation.
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Latest Inductor from Vishay is RoHS-Compliant
Available in 10 mm. by 6 mm. by 10 mm. 4024 case size that enables high current density, while its vertical-mount design saves on board space. Features high temperature operation to +155 °C that is optimized for energy storage in DC/DC converters up to 5 MHz. Offers high resistance to thermal shock, moisture, and mechanical shock, and handles high transient current spikes without saturation.
Read More »
New 40 V N-channel MOSFET Half Bridge Power Stage Features Wire-Free Internal Construction
SiZ240DT delivers increased power density and efficiency for white goods and industrial, medical and telecom applications. Channel 1 and Channel 2 MOSFET features on-resistance of 8.05 mΩ at 10 V and 12.25 mΩ at 4.5 V and 8.41 mΩ at 10 V and 13.30 mΩ at 4.5 V respectively. Optimized Qgd / Qgs ratio reduces noise to further improve the device's switching characteristics.
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New 40 V N-channel MOSFET Half Bridge Power Stage Features Wire-Free Internal Construction
SiZ240DT delivers increased power density and efficiency for white goods and industrial, medical and telecom applications. Channel 1 and Channel 2 MOSFET features on-resistance of 8.05 mΩ at 10 V and 12.25 mΩ at 4.5 V and 8.41 mΩ at 10 V and 13.30 mΩ at 4.5 V respectively. Optimized Qgd / Qgs ratio reduces noise to further improve the device's switching characteristics.
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New NTC Thermistor from Vishay is AEC-Q200 Certified
Features maximum power dissipation of 50 mW and operates over wide temperature range of -55 °C to +150 °C. Comes with long PEEK-insulated, nickel-iron (NiFe) leads and low thermal gradient for fast, high accuracy temperature measurement, sensing, and control in automotive and industrial applications. RoHS-compliant sensor offers resistance at +25 °C (R25) of 10 kΩ, with curve tracking between...
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New NTC Thermistor from Vishay is AEC-Q200 Certified
Features maximum power dissipation of 50 mW and operates over wide temperature range of -55 °C to +150 °C. Comes with long PEEK-insulated, nickel-iron (NiFe) leads and low thermal gradient for fast, high accuracy temperature measurement, sensing, and control in automotive and industrial applications. RoHS-compliant sensor offers resistance at +25 °C (R25) of 10 kΩ, with curve tracking between...
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Latest Siliconix SiSS94DN MOSFET is Designed to Increase Power Density
Offers low typical on-resistance of 61 mΩ at 10 V in the 3.3 mm. by 3.3 mm. thermally enhanced PowerPAK® 1212-8S package. Allows designers to save PCB space by replacing a much larger MOSFET with the same conduction losses, or similar sized MOSFET with higher conduction losses. Product is 100 % RG- and UIS-tested, RoHS-compliant, and halogen-free.
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Latest Siliconix SiSS94DN MOSFET is Designed to Increase Power Density
Offers low typical on-resistance of 61 mΩ at 10 V in the 3.3 mm. by 3.3 mm. thermally enhanced PowerPAK® 1212-8S package. Allows designers to save PCB space by replacing a much larger MOSFET with the same conduction losses, or similar sized MOSFET with higher conduction losses. Product is 100 % RG- and UIS-tested, RoHS-compliant, and halogen-free.
Read More »