Vishay
Malvern, PA 19355
Chip Resistors avoid roll-off at frequencies over 100 MHz.
Available in sizes down to 0402, Thin Film Series FC offers resistance values from 10-1,000 ohms, depending on case size, with precision tolerances down to 0.1%. Featuring alumina substrate and passivated nichrome resistive layer, units are rated for stability of 500 ppm/Ã-
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Thin Film Resistor Chips suit military applications.
Available in 0402, 0603, and 0502 cases, E/H MIL-PRF-55342 Qualified Resistor Chips offer ratings from 100 ohms to 160 kilohms. Units feature high-purity alumina substrate and electroplated nickel barrier layer, which enables operation at temperatures up to +150Ã-
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Silicon-Based RF Capacitor is offered in 0603 case size.
Based on proprietary semiconductor process, surface-mount HPC0603A features self-resonant frequency values to 13 GHz over capacitance range from 3.3-560 pF. E12 values available in this range provide stable operation over frequencies from 1 MHz to several GHz, and construction reduces parasitic inductance to 0.046 nH. Other characteristics include Q factors up to 4157, tolerances of Ã-
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Inductors feature DCR values down to 0.47 mOhm.
Available with inductance values of 5.6, 6.8, 8.2, and 10 Ã-µH, surface-mount Series IHLP features saturation currents up to 120 A and low losses at frequencies up to 5 MHz. Measuring 0.508 x 0.520 x 0.256 in., each inductor is packaged in self-shielded package that meets military specifications for resistance to thermal shock, moisture, mechanical shock, and vibration. Applications include...
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Power MOSFETs feature on-resistance to 0.0225 ohm.
Available in 1.6 x 2.4 mm chipscale format with 0.65 mm height profile, bi-directional Siliconix MICRO FOOT-® power MOSFET devices are offered in 20 V, p-channel Si8901EDB with 0.030 ohm on-resistance and 30 V, n-channel Si8904EDB with 0.0225 ohm on-resistance. Common-drain power MOSFETs, used for battery-protection modules for single-cell LiB and LiP battery packs, feature 6 and 4 kV ESD...
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Infrared Emitters offer 870 nm peak wavelength.
Built on double hetero chip GaAlAs/GaAlAs technology, Infrared Emitters feature typical forward voltage of 1.5 V. Housed in 5 mm round plastic T13/4 package, Model TSFF5410 combines Ã-
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Resistor Networks offer 0.05% resistance ratio tolerance.
Intended for use in instrumentation amplifiers, precision voltage dividers, and bridge network circuitry, Series MP precision thin film resistor divider networks come in SC-70 package. Surface-mount devices are available as isolated matched-pair or center-tapped resistor divider networks in 3-lead (MP3) or 4-lead (MP4) packages with max dimensions of 2.200 x 1.350 x 1.100 mm. Networks feature...
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DC/DC Converter features 15 x 15 mm power LED driver.
Requiring no external components, FX5959G701ADJ features fully integrated constant current source module that ensures full load life of LEDs without exceeding applicable LED voltage. It drives power LEDs rated for operation at or above 300 mA by being connected with LED and low voltage source. Measuring 0.59 x 0.59 x 0.126 in., product incorporates 20 components and dc/dc converter in one BGA...
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Diode Array offers bi-directional ESD protection.
Rated for operating voltage of 15 V, Model GCDA15C-1 offers typical capacitance of 5 pF, max reverse leakage current of 100 Ã-µA, and max clamping voltage of 21 V. ESD protection meets IEC 61000-4-2 Level 4 specifications. Measuring 1.25 x 2.85 mm with 1.1 mm profile, device comes in SOT-143 SMD package. High-temperature soldering is guaranteed to 260Ã-
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IR Emitters are optimized with 850 nm wavelength.
Lead-free infrared (IR) emitters TSHG6200 and TSMG3700, suited for CMOS camera and high-speed IR data transmission applications, incorporate GaAlAs double hetero technology and have 20 ns rise time and 1.8 V max forward voltage. Model TSHG6200 has radiant intensity of 180 mW/sr at forward current of 100 mA and Ã-
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