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Power MOSFETs offer TurboFET(TM) technology.
Controls & Controllers

Power MOSFETs offer TurboFET(TM) technology.

Utilizing charge balanced drain structure to lower gate charge by up to 45% for lower switching losses and faster switching, Gen III TrenchFETÂ-® power MOSFETs include two 20 V and two 30 V n-channel devices. They feature on-resistance times gate charge FOM down to 76.6 mWnC at 4.5 V and 117.60 mWnC at 10 V. 30-V TurboFET models Si7718DN, and Si7784DP offer gate charge of 13.7 nC at 4.5 V and...

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Electronic Components & Devices

Infrared Emitters operate in 940 nm wavelength.

Complaint to automotive AEC-Q101 standard, emitters are available in 1.8 mm (TÂ-¾) gullwing (VSMB2020X01), reverse gullwing (VSMB2000X01), PLCC2 (VSMB3940X01), and 0805 (VSMB1940X01) surface-mount packages. Model PLCC2 VSMB3940X01 features typical forward voltage of 1.35 V, and spectral bandwidth of 25 nm. Radiant intensity is 6 mW/sr for VSMB1940X01 and 40 mW/sr for model VSMB2020X01. Both...

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Electronic Components & Devices

N-Channel MOSFET is co-packaged with power diode.

Offered in PowerPAKÂ-® SC-70 package, SiA850DJ, 190 V N-channel power MOSFET plus co-packaged 190 V power diode provides on-resistance values from 17 W at 1.8 V VGS to 3.8 V at 4.5 V VGS, and diode forward voltage of 1.2 V at 0.5 A. Lead free, halogen-free, and RoHS-compliant product suits applications in high-voltage piezo-electric motors and organic LED backlighting in portable devices.

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Electrical Equipment & Systems

Shunt Resistor offers 3 W power capability.

Model WSMS5515 Power Metal StripÂ-® meter shunt resistor features processing technique that produces low resistance values ranging from 100-500 Â-µW. Featuring 4-terminal (Kelvin) connection design, lead (Pb)-free and RoHS-compliant device comes with all-welded construction, inductance values of less than 5 nH, thermal EMF of less than 3 Â-µV/Â-

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