New 2KW L Band Solid State Amplifier Comes with External Forward and Reverse Sample Ports
Amplifiers

New 2KW L Band Solid State Amplifier Comes with External Forward and Reverse Sample Ports

Designed with 50V GaN on SiC device technology which lowers transistor count and reduces combining losses while increasing efficiency and reliability. Offers user selectable "Graceful Output Power Degradation", backing down power in the event of component failure or excessive Load VSWR condition. Ideal for Jamming, threat simulation, multipaction, HIRF, and automotive EMC applications.

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New Input-Protected Low-Noise Amplifiers Operate with Bias Voltage of +12V Typical Over Temperature Range of -40 to +85 degree C
Electronic Amplifiers

New Input-Protected Low-Noise Amplifiers Operate with Bias Voltage of +12V Typical Over Temperature Range of -40 to +85 degree C

Consists of 12 different models that cover a broad range of frequency bands from 10 MHz to 3.5 GHz. Includes low noise figure levels from 0.8 to 1.6 dB, high-small signal gain ranging from 25 to 40 dB and low VSWR levels from 1.3:1 to 1.5:1. Ideal for radar systems, EW applications, military/microwave radios, wireless and satellite communications and test instrumentation.

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