OCZ Storage Solutions
San Jose, CA 95134
N-channel MOSFETs for electric power switching applications.
Used as load switches in smartphones and tablets, N-channel MOSFETs: 30V SSM6K513NU and 40V SSM6K514NU uses trench process for efficiency. Unit reduces output charge and on-resistance to 6.5mOhm and 8.9mOhm respectively and reduces heat dissipation by 40%. Unit meets USB Type-C and USB Power Delivery standards. Unit is compact and consumes low power.
Read More »N-channel MOSFETs for electric power switching applications.
Used as load switches in smartphones and tablets, N-channel MOSFETs: 30V SSM6K513NU and 40V SSM6K514NU uses trench process for efficiency. Unit reduces output charge and on-resistance to 6.5mOhm and 8.9mOhm respectively and reduces heat dissipation by 40%. Unit meets USB Type-C and USB Power Delivery standards. Unit is compact and consumes low power.
Read More »Photorelays feature drive currents from 0.4 to 5 A.
Supplied in DIP8 package, models- TLP3547, TLP3548, and TLP3549 offer pulsed ON-state current and can be used to replace mechanical relays in industrial applications. Total lack of physical contacts eliminates wear and deterioration concerns. While TLP3547 is 60 V photorelay with 5 A (max) drive current, 400 V TLP3548 features 0.4 A max drive current and high-speed switching of 1 ms...
Read More »Photorelays feature drive currents from 0.4 to 5 A.
Supplied in DIP8 package, models- TLP3547, TLP3548, and TLP3549 offer pulsed ON-state current and can be used to replace mechanical relays in industrial applications. Total lack of physical contacts eliminates wear and deterioration concerns. While TLP3547 is 60 V photorelay with 5 A (max) drive current, 400 V TLP3548 features 0.4 A max drive current and high-speed switching of 1 ms...
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SLC NAND Flash Memory (24 nm) targets industrial applications.
Based on 4 x 4 Gb die and supplied in 48-pin TSOP, 16 Gb BENAND™ is optimized for- effective write endurance (using 8-bit BCH ECC) as well as read/write performance. ECC is not required from host controller, and this enables use with host controllers that do not have 8-bit ECC capability. Delivering long-term process support, product operates from 2.7–3.3 V supply over -40 to +85°C range...
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SLC NAND Flash Memory (24 nm) targets industrial applications.
Based on 4 x 4 Gb die and supplied in 48-pin TSOP, 16 Gb BENAND™ is optimized for- effective write endurance (using 8-bit BCH ECC) as well as read/write performance. ECC is not required from host controller, and this enables use with host controllers that do not have 8-bit ECC capability. Delivering long-term process support, product operates from 2.7–3.3 V supply over -40 to +85°C range...
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N-Channel Power MOSFET targets automotive applications.
Fabricated using U-MOS-VIII-H process node, AEC-Q101 qualified TK160F10N1L (100 V, 160 A) keeps current balances in parallel operation in automotive applications. TO-220SM(W) package incorporates copper connector technology for optimal current handling and- thermal as well as minimal package resistance, and design promotes reliability by eliminating bond wires. Characteristics include max RDS(ON)...
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N-Channel Power MOSFET targets automotive applications.
Fabricated using U-MOS-VIII-H process node, AEC-Q101 qualified TK160F10N1L (100 V, 160 A) keeps current balances in parallel operation in automotive applications. TO-220SM(W) package incorporates copper connector technology for optimal current handling and- thermal as well as minimal package resistance, and design promotes reliability by eliminating bond wires. Characteristics include max RDS(ON)...
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High-Voltage MOSFETs enable efficient, high-speed switching.
Targeting switching voltage regulator designs, N-channel enhancement mode MOSFETs are based on pi-MOS VIII (Pi-MOS-8) planar semiconductor process.- Max leakage current is 10 µA, and gate threshold voltage range is 2.5–4.0 V. While 2.5 A TK3A90E and 4.5 A TK5A90E feature VDSS ratings of 900 V and respective RDS(ON) ratings of 3.7 and 2.5 Ω (typ), 4.0 A TK4A80E and 5.0A TK5A80E offer VDSS...
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High-Voltage MOSFETs enable efficient, high-speed switching.
Targeting switching voltage regulator designs, N-channel enhancement mode MOSFETs are based on pi-MOS VIII (Pi-MOS-8) planar semiconductor process.- Max leakage current is 10 µA, and gate threshold voltage range is 2.5–4.0 V. While 2.5 A TK3A90E and 4.5 A TK5A90E feature VDSS ratings of 900 V and respective RDS(ON) ratings of 3.7 and 2.5 Ω (typ), 4.0 A TK4A80E and 5.0A TK5A80E offer VDSS...
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