OCZ Storage Solutions
San Jose, CA 95134
Toshiba Makes Major Advances in NAND Flash Memory with 3-bit-Per-Cell 32nm Generation and with 4-bit-Per-Cell 43nm Technology
TOKYO, February 10, 2009 - Toshiba Corporation (TOKYO: 6502) today announced breakthroughs in multi-bit-per-cell technology for NAND flash memories that will bring advances in chip densities and cost savings to next generation devices. In the 32 nanometer (nm) generation, Toshiba has realized a 3-bit-per-cell 32 gigabit (Gb)1 chip with the world-smallest die size, and smaller than a...
Read More »SMT Optocouplers are suited for low-profile applications.
Designed to meet UL international safety standards, TLP109 and TLP116A are supplied in SO6 package with 0.4 mm thick (min) internal insulation that provides isolation voltage of 3,750 Vrms (min) as well as clearance and creepage distances of 5 mm (min). Transistor-transistor logic (TTL)-compatible TLP109 is 30 V (max), 1 Mbps general-purpose photocoupler with open-collector output, while TLP116A...
Read More »Toshiba Adds 40V, 60V, and 80V MOSFETs for Isolated DC-DC Bus Converters Using Sixth Generation High Speed Process for High Power Efficiency
Toshiba Adds 40V, 60V and 80V MOSFETs for Isolated DC-DC Bus Converters Using Sixth Generation High Speed Process for High Power Efficiency Higher Power UMOS VI-H MOSFETS for use in the Primary Side Switch of Isolated DC-DC Bus Converters Achieve High Power Efficiency Through Lower On-state Resistance and Reduced Gate Charge IRVINE, Calif., Feb. 25 / / - Toshiba America Electronic Components,...
Read More »Toshiba Adds Family of High-Voltage Power Mosfets Using Advanced π-MOS Vii Process Technology for AC/DC and Ballast Applications
500V and 600V MOSFETs Combine Advanced Process Technology with Optimized Planar Cell Structure to Increase Power Density and Efficiency IRVINE, Calif., January 20, 2009 - Toshiba America Electronic Components, Inc. (TAEC)* today introduced a new series of high-voltage Ã-
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Flash Memories are offered in versions up to 64 GB.
Manufactured with 43 nm process technology, single-level cell (SLC) NAND flash memories are available in 16 models with densities ranging from 512 MB to 64 GB. Units can read and write large amounts of data at high speed and are suited for use in mobile phones, flat panel TVs, OA equipment, and servers. Models in BGA and TSOP I packages are available.
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Solid State Drives are available in 2.5 in., 512 GB version.
Flash-based drives based on 43 nm multilevel cell NAND are available in 64, 128, 256 and 512 GB models in 1.8 or 2.5 in. drive enclosures or as SSD Flash Modules. Drives utilize MLC controller that achieves parallel data transfers and wear leveling to optimize performance. Maximum sequential read speed of SSDs is 240 Mbps and maximum sequential write speed is 200 Mbps. Units also include AES data...
Read More »Toshiba Develops Cost-Effective 32 nm CMOS Platform Technology by Advanced Single Exposure Lithography
TOKYO - Toshiba Corporation (TOKYO: 6502) today announced a cost-effective 32nm CMOS platform technology that offers higher density and improved performance while halving the cost per function from 45nm technology. The platform was achieved by application of advanced single exposure lithography and gate-first metal gate/high-K process technology. This technology enables a 0.124 Ã-µm2 SRAM...
Read More »Solid State Drives feature serial attached SCSI interface.
Intended for enterprise applications, Single Level Cell NAND-based SSDs offer up to 25,000/20,000 random Input/Output operations/sec for 4 KB data block size read/write, and storage capacities up to 100 GB. Drives are available in 2.5 in. small form factor and feature dual ported SAS redundancy and non-volatile cache. Applications include servers, direct-attached storage, and network-attached...
Read More »Monolithic DC-DC Converters offer up to 3.8 A output current.
Model TCV7100F with 2.5 A output has typical switching frequency of 800 kHz, while 3.8 A output TCV7101F offers switching frequency of 600 KHz and includes built-in driver for external low side MOSFET. Featuring 2.7-5.5 V input range, both step-down converters feature adjustable output voltage as well as synchronous rectification, under voltage protection, and adjustable soft start time....
Read More »Microcontroller targets devices with multimedia displays.
Based on 32-bit ARM926EJ-S CPU operating at up to 200 MHz, TMPA910CRAXBG features LCD controller supporting TFT and STN display resolutions up to 1,024 x 768 pixels as well as LCD data processor that offers real-time processing for video at up to 30 fps. System also integrates CMOS image sensor interface and touchscreen interface. MCU offers 56 KB RAM, SDR and DDR SDRAM memory controller, NAND...
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