Flash Memories are offered in versions up to 64 GB.
Press Release Summary:
Manufactured with 43 nm process technology, single-level cell (SLC) NAND flash memories are available in 16 models with densities ranging from 512 MB to 64 GB. Units can read and write large amounts of data at high speed and are suited for use in mobile phones, flat panel TVs, OA equipment, and servers. Models in BGA and TSOP I packages are available.
Original Press Release:
Toshiba to Launch 43 nm SLC NAND Flash Memory
Introducing the industry's largest density SLC NAND chip at 16Gb chip and enhanced SLC line-ups
28 Oct, 2008
Tokyo - Toshiba Corporation today announced the launch of a new line-up of 43nm single-level cell (SLC) NAND flash memory products available in densities ranging from 512Mbits to 64 gigabits (Gb) and in a total of 16 versions. The new range includes three products, 16Gb, 32Gb and 64Gb, which integrate monolithic 16Gb chips fabricated with 43nm generation process technology, the highest density chips available. The new devices will start to come to market in the first quarter of 2009.
SLC chips can read and write large amounts of data at high speed, support a very large number of read and write times, and offer high-level reliability. Toshiba developed the new SLC devices to meet diversifying applications, and its enhanced line-up offers support for mobile phones, flat panel TVs, OA equipment, and servers, all of which require high levels of read and write speeds and reliability.
In recent years, Toshiba Corporation has promoted expansion of the NAND flash memory market by accelerating development of high density multi-level-cell (MLC) chips to be used for high capacity data storage in such markets as memory cards and MP3 players. Production of SLC chips has been limited, and with 56nm and 70nm process technologies. In bringing a wider range of SLC flash memories which suit to store data at an advanced level into its line-up, Toshiba aims to expand its line-up of high-value added products for diverse embedded applications, and will promote mass production through the application of advanced process technology.
Product Number Capacity Package Page Size Mass Production
TH58NVG6S2EBA20 64Gb BGA Large Block 2009, 1Q
TH58NVG5S2EBA20 32Gb BGA Large Block 2009, 1Q
TC58NVG4S2EBA00 16Gb BGA Large Block 2009, 1Q
TC58NVG3S2ETA00 8Gb TSOP I Large Block 2009, 2Q
TC58NVG2S3ETA00 4Gb TSOP I Large Block
TC58NVG2S3EBAJX 4Gb BGA Large Block
TC58NVG1S3ETA00 2Gb TSOP I Large Block 2009, 1Q
TC58NVG1S3EBAJX 2Gb BGA Large Block 2009, 2Q
TC58NVG0S3ETA00 1Gb TSOP I Large Block 2009, 2Q
TC58NVG0S3EBAJ5 1Gb BGA Large Block 2009, 2Q
TC58DVG02A5TA00 1Gb TSOP I Small Block 2009, 3Q
TC58DVG02A5BAJ5 1Gb BGA Small Block 2009, 3Q
TC58NVM9S3ETA00 512Mb TSOP I Large Block 2009, 2Q
TC58NVM9S3EBAJW 512Mb BGA Large Block 2009, 2Q
TC58DVM92A5TA00 512Mb TSOP I Small Block 2009, 3Q
TC58DVM92A5BAJW 512Mb BGA Small Block 2009, 3Q
Features of the new products
1. By applying leading edge 43nm process technology and advanced technology to increase data savings, the new products density doubled compared to the 56nm SLC products. This enables the new memories to be applied to products that require higher performance and reliability.
2. The writing speed is 2.5 times* faster than the MLC NAND flash memory.
* Comparison between 16Gb MLC and SLC products.
8bit=1byte
<16Gb product>
Product Number TC58NVG4S2EBA00
Density 16Gb
Power 3.3V
Program time 400 microseconds/ page (Typ.)
Delete time 4 milliseconds/ block (Typ.)
Access time 40 microseconds(1st)
25 nanoseconds(Serial)
Size 14mm x 18mm
