RF Micro Devices, Inc.
Greensboro, NC 27409-9421
Jun 11, 2009 Manufactured using InGaP HBT process technology, 2 GHz Model RF5602 features 32-34 dB small signal gain, integrated input power detector, and 3.3-5 V operation. Error vector magnitude performance is 2% at 26 dBm output power, 2% at 25 dBm, and 3% at 23.5 dBm. Optimized for use as final RF amplifier in 802.16 e/d and 802.11 b/g/n applications, device is also suited for 2.4 GHz ISM band applications, PCS communications systems, and WiBro 2.3-2.4 GHz applications.

Avago Technologies
San Jose, CA 95131
Sep 29, 2008 Available in bare die or surface mount packaging, AMMC/P-6333 driver amplifiers target wireless communication infrastructure applications, including point-to-point radios, VSAT and fiber to the home. Fabricated using 0.25 um enhancement mode PHEMT technology, amplifiers deliver gain of 20 dB and P1dB of 23 dBm. With 50 W matching and third order intercept point of 30 dBm, they can be used with single positive voltage supply and DC power of 5 V bias at 220 mA.

Anadigics, Inc.
Warren, NJ 07059
Jul 03, 2008 Operating in 5-85 MHz frequency range, Model ARA2017 supports DOCSIS 3.0-specified signal levels of +64 dBmV while minimizing harmonic distortion and output noise levels. Linear amplifier features 33 dB of RF gain at minimum attenuation, and includes digitally controlled, multi-stage precision step attenuator that provides up to 58 dB of attenuation in 2 dB increments. Requiring single 5 V supply, device is offered in 28-pin 5 x 5 x 1 mm QFN package.

Texas Instruments, Inc. (TI)
Dallas, TX 75243-4136
Jun 24, 2008 Able to deliver bandwidth of 850 MHz at gain of +2 V/V and slew rate of 2,900 V/µsec, dual-channel OPA2695 provides fast signal conditioning with linearity to minimize distortion for optimal signal fidelity and filtering. Single or dual supply voltage options and gain capability give engineers flexibility to adjust parameters to address specific application needs, while current-feedback architecture with optimized differential pin-out facilitates PCB layout efforts.

Anadigics, Inc.
Warren, NJ 07059
May 30, 2008 Offered in 16-pin SMT package, ACA2420 power doubler line amp ensures optimal video and data delivery in deep fiber HFC architectures and other cable TV deployments that minimize use of cascaded system amps. Combination of output power (+58 dBmV/ch) with minimal distortion meets demands of next generation 1 GHz fiber-deep nodes and system amplifiers. Crash point lets device maintain minimal carrier-to-intermodulation noise, composite triple beat, and composite second order distortion.

Anadigics, Inc.
Warren, NJ 07059
May 20, 2008 Operating from +8 V, Model ABA3101 delivers +34 dBmV/channel of linear output power with 12 dB of RF gain. Unit maintains composite second order and composite triple beat distortion below -69 dBc, and provides less than 3.2 dB across 1 GHz CATV band. Model ABA3115, operating from +5 V supply, provides +25 dBmV/channel and 15 dB of RF gain. GaAs IC operates up to 870 MHz, maintains CSO and CTB distortion below -70 dBc, and provides typical low noise figure of 2.7dB.

Anadigics, Inc.
Warren, NJ 07059
Apr 25, 2008 Fully compliant with HSDPA and HSUPA requirements, AWT6281 PA enables manufacturers to design and develop 3G handsets and data cards required for successful conversion to UMTS900 worldwide. Self-contained product comes in 4 x 4 x 1.1 mm SMT package, offers quiescent currents of 7 mA without dc/dc converter, and eliminates need for external voltage regulator. It extends operating time of 3G handsets and data cards accessing EGSM (Band 8) UMTS wireless networks.

Tyco Electronics Corp.
Harrisburg, PA 17105-3608
Nov 26, 2007 Suited for point-to-point radios, MAAM-007523 and MAAM-007524 amplifiers feature +32 dBm IP3 (third-order intercept point) linearity and P1dB levels from 19-21 dBm. Self-biased devices may be operated with drain supplies from 4.5-8.0 V to optimize system performance including linearity, gain, and power efficiency. MTTF is 1 million hr at 170°C junction temperature and RoHS-compliant units are compatible with 260°C reflow temperature. Package option is 16-lead, 4 mm PQFN.

Tyco Electronics Corp.
Harrisburg, PA 17105-3608
Oct 11, 2007 Available in bare die or plastic package options, M/A-COM MAAM-007523 and MAAM-007524 respectively cover 4.9-8.5 GHz and 10.0-15.4 GHz ranges for point-to-point (P2P) radios. Both feature +32 dBm IP3 (third-order intercept point) linearity and P1dB levels from 19-21 dBm. Compatible with 260°C reflow temperature, RoHS-compliant products are self-biased and may be operated with drain supplies from 4.5-8.0 V. Typ gain flatness across individual P2P bands is ±0.5 dB.

Picosecond Pulse Labs, Inc.
Boulder, CO 80301
Sep 07, 2007 Suitable as Lithium Niobate modulator driver, LABware Model 8001 integrates 12.5 Gb/s broadband amplifier, power supply, and front panel controlled amplitude and crossing point. Unit features max amplitude of 8 Vpp with 14 ps risetime saturated output. Integrating 10 kHz to 15 GHz low noise linear amplifier and power supply, LABware Model 8003 is suitable as photodetector output amplifier. It features 1 dB compression point of 13 dBm (2.8 Vpp) and ±3° deviation from linear phase.

Tyco Electronics Corp.
Harrisburg, PA 17105-3608
Aug 09, 2007 Supplied in Pb-free 3 mm 12-lead PQFN package, M/A-COM MAAP-000082 is suited for space-restricted PHS (Personal Handy-phone System) applications that require high gain and efficiency. This 1.9 GHz, 3-stage power amplifier is equipped with ESD protection and withstands electrostatic discharges up to 1,000 V without performance degradation. Consuming 200 mA of current, it provides 21 dBm of linear output power and 36 dB gain. Amplifier has -63 dBc ACPR performance at 600 KHz offset.

Anadigics, Inc.
Warren, NJ 07059
Jul 23, 2007 Model AWT6388 is for CDMA450-based cell phones and wireless local loop applications that bring 3G voice and data communications to wide areas in emerging and developed countries. High power and -134 dBm/Hz receive band noise enable performance over extended coverage areas of wide area CDMA450 networks. At 4 x 4 x 1 mm, it is built using InGaP HBT technology and features low-power quiescent current mode to reduce power drain on system battery.

Tyco Electronics Corp.
Harrisburg, PA 17105-3608
Feb 12, 2007 RoHS-compliant MAAPSS0103 and MAAPSS0104 are designed for WiMAX CPE applications that require gain, efficiency, and linearity suitable for OFDM signals. While MAAPSS0103 offers linear gain of 34 dB and operates over 2.3-2.7 GHz range, MAAPSS0104 has linear gain of 32 dB and operates over 3.3-3.8 GHz range. Both 3-stage devices achieve 26 dBm linear output power with EVM under 2.5% at 5 V while drawing 600 mA current. Signal operating current is 250 mA.

M/A-COM, Inc.
Lowell, MA 01853
Jan 16, 2007 Model MAAP-008015 is 2.4 GHz, silicon germanium (SiGe) 3-stage linear power amplifier offered in lead-free 3 mm 12-lead PQFN plastic package. For 802.11g applications, amplifier generates 16 dBm of linear output power while drawing 65 mA of current and maintaining EVM of less than 3.0%. For 802.11b applications, device generates up to 20 dBm of linear output power while consuming 100mA of current. Typical linear gain is 31 dB at operating voltage of 3.3 V.

M/A-COM, Inc.
Lowell, MA 01853
Oct 18, 2006 Utilized in WiMAX, WiBro, and UMTS/WCDMA base stations, Model MAAMSS0071 single-stage driver amplifier is fabricated using GaAs HBT process. Product features gain blocks with output of P1dB levels of +26 dBm and gain of 16 dB at 2,140 MHz. Housed in lead-free, RoHS compliant SOT-89 plastic package, amplifier offers 500-2,500 MHz bandwidth, which can be optimized for specific frequency range with external matching components.

Sirenza Microdevices
Broomfield, CO 80021
Sep 29, 2006 Available in RoHS/WEEE compliant SOT-89 package, Model SGA-9089Z Silicon Germanium (SiGe) high linearity, medium power discrete product can be biased from 2.7-3.3 V over wide range of currents to deliver linearity, noise figure, and power up to 24 dBm. One-quarter watt SGA-9089Z is suitable for 3G, cellular, fixed wireless, and various other low noise and driver amplifier applications.

M/A-COM, Inc.
Lowell, MA 01853
Sep 25, 2006 With usable bandwidth of 250-4,000 MHz, 2-stage driver amplifiers are fabricated using GaAs HBT process and are suited for greater than 2 GHz linear applications. Devices are housed in Pb-free, RoHS compliant 4 mm PQFN plastic packages. Model MAAMSS0072 achieves 23 dB gain, 27 dBm P1dB and 1.5% EVM with 18 dBm Pout for OFDM signal at 3.5 GHz with operating current of 235 mA. Geared for higher power, MAAMSS0073 achieves 29 dBm P1dB, 21 dBm Pout, and operating current of 590 mA.

Sirenza Microdevices
Broomfield, CO 80021
Jun 22, 2006 Available in 2 models, SZP series 2 W linear power amplifiers operate from +5 Vdc supply and feature adjustable on-chip active bias circuit. Model SZP-3026Z operates over 3.0-3.8 GHz frequency range with 12 dB of gain, while SZP-2026Z covers 2.1-2.7 GHz frequency range with over 12.5 dB gain. Both provide over +26 dBm of linear power at 2.5% EVM. Housed in surface mount SOF-26 package, they have ESD rating of class 1C and 1 million hr MTTF.

Sirenza Microdevices
Broomfield, CO 80021
Jun 08, 2006 Silicon Germanium (SiGe) high linearity, medium power discrete device SGA-8543Z offers performance from 50-3500 MHz and can be biased from 2.7-3.3 V. Suited for high volume cellular, GPS, and various ISM low noise and driver amplifier applications, device is available in RoHS/WEEE compliant SOT-343 package.

Sirenza Microdevices
Broomfield, CO 80021
Apr 04, 2006 Model SZM-3066Z high linearity 2 W power amplifier enables connectivity and high throughput in WiMAX customer premises equipment, access points, and base station equipment. Produced in InGaP HBT technology, it operates over 3.3-3.8 GHz frequency range with 34 dB gain while providing +26 dBm of linear power @ 2.5% EVM. Operating from +5 Vdc supply, it features adjustable on-chip active bias circuit, power up/down control, and on-chip power detector.