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Electronic Components & Devices -> Electronic Amplifiers -> Microwave Amplifiers


Microwave Amplifiers




(Showing headlines 1 - 20)   more ....
MMIC Power Amplifier operates from DC to 20 GHz.

MMIC Power Amplifier operates from DC to 20 GHz.

Custom MMIC    Westford, MA 01886
Apr 09, 2014 Supplied in die form, Model CMD201 delivers greater than 20 dB of gain from DC to 20 GHz, with corresponding output 1 dB compression point of +29 dBm and output IP3 of +38 dBm at 10 GHz. Distributed power amplifier is suited for microwave radios and VSAT, telecom infrastructure, and test instrumentation, as well as military, space, and fiber optic applications.

GaAs Distributed Driver Amp offers positive gain slope, low noise.

GaAs Distributed Driver Amp offers positive gain slope, low noise.

Custom MMIC    Westford, MA 01886
Mar 28, 2014 Supplied in Pb-free, RoHs-compliant, 5 x 5 mm, SMT package, CMD192C5 wideband GaAs MMIC distributed amplifier operates from DC to 20 GHz and has positive gain slope versus frequency. This allows for cascading of multiple amplifiers without requiring extra gain compensation circuitry. Driver amplifier, which delivers >19 dB of gain with corresponding output of 1 dB compression point of +25 dBm, has 50 Ω matched design and low noise figure of 1.9 dB at 10 GHz.

MMIC Power Amplifier covers full E-band.

M/A-COM, Inc.    Lowell, MA 01853
Mar 24, 2014 Suited for high-bandwidth, long-distance, point-to-point wireless backhaul, MAAP-011106 delivers typ Psat of 25.5 dBm for 71–76 GHz and 81–86 GHz frequency ranges. Product is optimized to enable fiber-caliber data rates of 1 Gbps and higher over extended distances across 10 GHz of available E-Band spectrum to accommodate growing data demand. Fabricated using pHEMT process, amplifier has integrated power detector and supports 20 dB small signal gain with VGC for performance tuning.

MMIC Driver Amplifier delivers +20 dBm of output power.

MMIC Driver Amplifier delivers +20 dBm of output power.

Custom MMIC    Westford, MA 01886
Mar 13, 2014 Featuring frequency range of 1–24 GHz, Model CMD197 offers 16 dB of flat gain with corresponding output 1 dB compression point of greater than +20 dBm and output IP3 of greater than +30 dBm across entire bandwidth. Distributed GaAs driver amplifier includes on-chip bias choke and 50 Ω port matches. Fully passivated for moisture protection, Model CMD197 is suited for military and space applications, wideband communication systems, microwave radio, VSAT, and test instrumentation.

TTL Amplifier meets MIL-STD-883 standard.

TTL Amplifier meets MIL-STD-883 standard.

Microwave Solutions, Inc.    National City, CA 91950
Jan 23, 2014 Featuring customizable design, 10 W Model MSH-4627908-TTL is optimized for operating frequency range of 5.2–5.8 GHz with 28 dB min of gain and 6 A max fully matched to 50 Ω. Unit provides fast blanking and is manufactured in compliance with AS9100. Available with mounting plate, amplifier is suited for test systems as well as aerospace and defense applications.

Low-Noise MMIC Amplifiers meet MIL requirements.

Low-Noise MMIC Amplifiers meet MIL requirements.

Mini-Circuits    Brooklyn, NY 11235
Jan 17, 2014 Utilizing E-PHEMT technology, CMA Series is tested to meet MIL requirements for gross leak, fine leak, thermal shock, vibration, acceleration, mechanical shock, and HTOL. Units are housed in 3 x 3 x 1.4 mm ceramic cases that are hermetically sealed and nitrogen filled. Offering thermal performance of -55 to +105°C, CMA Series includes four models with 31.5, 18.4, 23.0, and 17.0 dB gain and noise figures of 1.00, 0.75, 0.50, and 0.80 dB, respectively.

Power Amplifiers feature ultra-wideband capability.

Giga-tronics, Inc.    San Ramon, CA 94583
Nov 21, 2013 Designed using broadband MMIC technology, GT-1000B option 06 and GT-1050B/GT-1051B Solid-State Microwave Power Amplifiers cover 100 MHz to 20 GHz and 10 MHz/2 GHz to 50 GHz, respectively. Model GT-1000B option 06 provides 5 W from 100 MHz to 18 GHz, while Models GT-1050B/GT-1051B deliver ½ W (+27 dBm) at 40 GHz and ¼ W (+24 dBm) at 50 GHz. With ±3.5 dB typical gain flatness, amplifiers are suited for spectrum analyzers and EMC receivers.

Low-Noise Amplifier delivers more than 20 dB of gain.

Low-Noise Amplifier delivers more than 20 dB of gain.

Custom MMIC    Westford, MA 01886
Nov 20, 2013 Operating from 6–20 GHz, Model CMD194C3 delivers greater than 20 dB of gain with corresponding output 1 dB compression point of +15 dBm and noise figure of 2 dB. Ports of MMIC are matched to 50 Ω, eliminating need for external DC blocks and RF matching. Housed in 3 x 3 mm ceramic surface-mount package, RoHS-compliant broadband amplifier is suited for point-to-point and point-to-multipoint radios, military EW systems, and test instrumentation.

C-Band 8 W GaAs MMIC Amplifier comes in plastic package.

C-Band 8 W GaAs MMIC Amplifier comes in plastic package.

M/A-COM Technology Solutions, Inc.    Lowell, MA 01851
Sep 18, 2013 Operating over 5.2–5.9 GHz bandwidth, MAAP-011027 offers fully matched solution that can be used as power amplifier stage or driver stage in high power pulsed applications. This 2-stage, 8 W saturated C-band power amplifier with 37% power added efficiency is supplied in lead (Pb)-free, 5 x 5 mm, 20-lead PQFN package and suits C-Band radar and communication applications. Parameters include 20 dB gain, input and output return loss of 10 dB, and 9 dBm PSAT.

GaAs MMIC Driver Amplifier offers high output, low consumption.

GaAs MMIC Driver Amplifier offers high output, low consumption.

Custom MMIC    Westford, MA 01886
Aug 23, 2013 Supplied in leadless, RoHS-compliant, 4 x 4 mm, SMT package, CMD191C4 operates from 4–10 GHz and delivers 20 dB of gain with corresponding output 1 dB compression point of >+21 dBm. This GaAs MMIC (monolithic microwave integrated circuit) driver amplifier is 50 Ω matched design, which eliminates need for external DC blocks and RF port matching. RF power can be applied at any time, and device is biased with single 5.0 V positive drain supply.

Distributed Driver Amplifier operates from DC to 20 GHz.

Distributed Driver Amplifier operates from DC to 20 GHz.

Custom MMIC    Westford, MA 01886
Aug 15, 2013 Supplied in die form, Model CMD192 delivers greater than 20 dB of gain with corresponding output 1dB compression point of +22 dBm and noise figure of 2.8 dB at 18 GHz. GaAs MMIC has positive gain slope with increasing frequency, compensating for frequency losses. Using on-chip tracking circuits to ensure consistent performance over temperature and process variation, CMD192 is suitable for microwave radio and VSAT, telecom infrastructure, test instrumentation, military and space applications.

MMIC 10 W Power Amplifier serves 2-6 GHz broadband applications.

M/A-COM Technology Solutions, Inc.    Lowell, MA 01851
Aug 07, 2013 Intended for high-power broadband applications, MAAP-010169 is 2-staged amplifier operating from 2–6 GHz. It is fully matched for input and output at 50 Ω, eliminating need for sensitive external RF tuning components. Fabricated using high-reliability pHEMT process, this MMIC power amplifier provides nominal Gain of 18 dB with respective input and output return loss of 8 and 10 dB. Other characteristics include 38 dBm P1db, 40 dBm PSAT, 10 V bias operation, and -0.56 gate bias.

GaAs MMIC Low Noise Amplifier covers 33-45 GHz applications.

GaAs MMIC Low Noise Amplifier covers 33-45 GHz applications.

Custom MMIC    Westford, MA 01886
Jul 17, 2013 Featuring 50 Ω matched design that eliminates need for external DC blocks and RF port matching, CMD190 delivers >19 dB of gain with corresponding noise figure of 2.1 dB at 36 GHz. All-positive bias design eliminates negative bias sequencing circuits while simplifying board layout, and use of on-chip pinch-off tracking circuit ensures consistent performance over temperature and process variations. Solution offers full passivation for reliability and moisture protection.

Power Amplifier supports military/commercial applications.

Northrop Grumman Corp., Space Technology    Redondo Beach, CA 90278
Jun 11, 2013 Consisting of 0.2 mm GaN HEMT MMIC power amplifier chip in flange mount package, Model APN180FP operates from 27–31 GHz with drain voltage of +28 V. Unit provides 21 dB of linear gain, +37 dBm of output power at 1 dB gain compression, and +39 dBm in saturation with Power Added Efficiency of 26% at midband. For less demanding applications, device can be operated from drain voltage as low as +20 V while still producing +37 dBm of saturated output power.

Broadband Driver Amplifier covers 6-14 GHz range.

Custom MMIC    Westford, MA 01886
Apr 04, 2013 Housed in RoHS-compliant 3 x 3 mm QFN plastic package, Model CMD158P3 delivers 20 dB of gain with +20 dBm of saturated power while requiring +5 V supply at 95 mA. Input and output ports are DC blocked, and amplifier does not require any off-chip tuning components. Offering alternative to hybrid amplifiers, Model CMD158P3 is suited for point-to-point and point-to-multipoint radios, VSAT, mixer LO chains, and military EW applications.

Surface Mount Line Amplifiers target CATV systems in Asia.

Anadigics, Inc.    Warren, NJ 07059
Mar 27, 2013 Based on GaAs MESFET process, 24 V Models ACA2460E, ACA2461E, and ACA2462E provide 22, 25, and 28 dB of gain, respectively, providing performance required to design systems up to 1 GHz. MMIC line amplifiers feature low composite triple beat, composite second order, and cross modulation distortion characteristics for optimal performance in fully loaded spectrum. Thermal characteristics of SOIC package platform minimize heat sink requirements.

Ultra-Low Noise Amplifier features noise figure of 1.3 dB.

Ultra-Low Noise Amplifier features noise figure of 1.3 dB.

Custom MMIC    Westford, MA 01886
Feb 27, 2013 Housed in 3 x 3 mm QFN plastic surface mount package, 5–11 GHz Model CMD132P3 delivers greater than 20 dB of gain across entire bandwidth, and has corresponding output 1 dB compression point of +10 dBm. RoHS-compliant device requires single supply voltage of +3.6 V at 30 mA. In addition to microwave radios and C- and X-band applications, amplifier is suitable for point-to-point radios, point-to-multipoint radios, military/space applications, and test instrumentation.

Low Noise Amplifier supports X-Band applications.

Low Noise Amplifier supports X-Band applications.

M/A-COM Technology Solutions, Inc.    Lowell, MA 01851
Feb 15, 2013 Housed in 3 x 3 mm PQFN surface mount package, MAAL-010528 GaAs MMIC LNA provides nominal gain of 20 dB, OIP3 linearity of 26 dBm, and mid-band noise figure supply of 1.6 dB over 8.0–12.0 GHz frequency band. Unit features self-bias architecture which requires user to apply only single positive supply. Internally matched to 50 Ω input/output, 60 mA amplifier is suited for V-Sat, radar, and microwave applications.

GaAs MMIC Power Amplifiers  cover 5-11 GHz range.

GaAs MMIC Power Amplifiers cover 5-11 GHz range.

Custom MMIC    Westford, MA 01886
Dec 27, 2012 With 5–7, 7.5–9, and 9.5–11 GHz ranges, respectively, Models CMD169P4, CMD170P4, and CMD171P4 each have output 1 dB compression point of greater than +28 dBm, with gain levels from 20–30 dB. All three designs require only positive bias, eliminating need for complicated sequencing circuitry. Housed in Pb-free, RoHS-compliant, 4 x 4 QFN plastic packages, amplifiers offer on-chip detector for applications where power leveling is required. Units are 50 Ω matched on input and output ports.

Wideband GaAs MMIC Distributed Amp Die offers positive bias.

Wideband GaAs MMIC Distributed Amp Die offers positive bias.

Custom MMIC    Westford, MA 01886
Nov 30, 2012 Intended for applications from DC to 20 GHz, CMD173 wideband GaAs MMIC (monolithic microwave integrated circuit) distributed amplifier die delivers greater than 15 dB gain with corresponding output 1 dB compression point of +18 dBm and noise figure of 1.5 dB at 8 GHz. All-positive bias design eliminates sequencing circuits while reducing complexity of board layout. Also, on-chip tracking circuits promote consistent performance over temperature and process variation.




(Showing headlines 1 - 20)   more ....



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