Custom MMIC    Westford, MA 01886
Apr 04, 2013 Housed in RoHS-compliant 3 x 3 mm QFN plastic package, Model CMD158P3 delivers 20 dB of gain with +20 dBm of saturated power while requiring +5 V supply at 95 mA. Input and output ports are DC blocked, and amplifier does not require any off-chip tuning components. Offering alternative to hybrid amplifiers, Model CMD158P3 is suited for point-to-point and point-to-multipoint radios, VSAT, mixer LO chains, and military EW applications.

Anadigics, Inc.    Warren, NJ 07059
Mar 27, 2013 Based on GaAs MESFET process, 24 V Models ACA2460E, ACA2461E, and ACA2462E provide 22, 25, and 28 dB of gain, respectively, providing performance required to design systems up to 1 GHz. MMIC line amplifiers feature low composite triple beat, composite second order, and cross modulation distortion characteristics for optimal performance in fully loaded spectrum. Thermal characteristics of SOIC package platform minimize heat sink requirements.

Custom MMIC    Westford, MA 01886
Feb 27, 2013 Housed in 3 x 3 mm QFN plastic surface mount package, 5–11 GHz Model CMD132P3 delivers greater than 20 dB of gain across entire bandwidth, and has corresponding output 1 dB compression point of +10 dBm. RoHS-compliant device requires single supply voltage of +3.6 V at 30 mA. In addition to microwave radios and C- and X-band applications, amplifier is suitable for point-to-point radios, point-to-multipoint radios, military/space applications, and test instrumentation.

M/A-COM Technology Solutions, Inc.    Lowell, MA 01851
Feb 15, 2013 Housed in 3 x 3 mm PQFN surface mount package, MAAL-010528 GaAs MMIC LNA provides nominal gain of 20 dB, OIP3 linearity of 26 dBm, and mid-band noise figure supply of 1.6 dB over 8.0–12.0 GHz frequency band. Unit features self-bias architecture which requires user to apply only single positive supply. Internally matched to 50 Ω input/output, 60 mA amplifier is suited for V-Sat, radar, and microwave applications.

Custom MMIC    Westford, MA 01886
Dec 27, 2012 With 5–7, 7.5–9, and 9.5–11 GHz ranges, respectively, Models CMD169P4, CMD170P4, and CMD171P4 each have output 1 dB compression point of greater than +28 dBm, with gain levels from 20–30 dB. All three designs require only positive bias, eliminating need for complicated sequencing circuitry. Housed in Pb-free, RoHS-compliant, 4 x 4 QFN plastic packages, amplifiers offer on-chip detector for applications where power leveling is required. Units are 50 Ω matched on input and output ports.

Custom MMIC    Westford, MA 01886
Nov 30, 2012 Intended for applications from DC to 20 GHz, CMD173 wideband GaAs MMIC (monolithic microwave integrated circuit) distributed amplifier die delivers greater than 15 dB gain with corresponding output 1 dB compression point of +18 dBm and noise figure of 1.5 dB at 8 GHz. All-positive bias design eliminates sequencing circuits while reducing complexity of board layout. Also, on-chip tracking circuits promote consistent performance over temperature and process variation.

Comtech Xicom Technology, Inc.    Santa Clara, CA 95054
Sep 11, 2012 Delivering coverage from 12.75-14.5 GHz, Ku-band traveling wave tube amplifiers (TWTAs) antenna-mount TWTAs include 400 W model XTD-400KHE and 750 W model XTD-750KHE. Models XTD-1250KL antenna-mount amplifier and XTRT-1250KL rack-mount amplifiers with touch screen control interface are also available with extended wide-band coverage and rated at 1,250 W. Each TWTA provides full spec-compliant performance over expanded band.

M/A-COM Technology Solutions, Inc.    Lowell, MA 01851
Aug 10, 2012 Designed for integration in 75 W push-pull circuit, Model MAAM-010144 is suited for CATV, FTTX, DBX, and HDTV applications. MMIC design is configured as pair of cascode MESFET amplifiers for optimal broadband performance. Housed in TSSOP 16-lead exposed paddle package, device provides 20.5 dB gain and +8 Vdc bias with gain flatness of 0.6 dB and low noise figure of 5.5 dB. Input return loss is 18 dB and output return loss is 15 dB.

Custom MMIC    Westford, MA 01886
Jun 26, 2012 Designed for 6-18 GHz applications, GaAs MMIC low-noise amplifiers come in 2 models: CMD157 die and CMD157P3 leadless 3 x 3 mm plastic SMT package. Both units are 50 W matched designs, deliver greater than 25 dB of flat gain, and have corresponding output 1 dB compression point of +10 dBm. Biased with single positive voltage of +3.0 V @ 52 mA, devices can be used with RF power. They are suited for broadband EW and communication systems.

Mini-Circuits    Brooklyn, NY 11235
May 09, 2012 Packaged in 2 x 2 mm case, PMA2-252LN+ is adaptable microwave amplifier designed for 1.5-2.5 GHz receiver applications, from LTE and satellite base stations to GPS and air navigation. It is powered by single 3-4 Vdc supply and features low noise figure of 0.8 dB typical and high IP3 of up to 32 dBm. Packaged in 2 x 2 mm case, amplifier can handle RF input power up to +25 dBm without requiring external limiters. It has an adjusted bias current of 25-80 mA.

Comtech Xicom Technology, Inc    Santa Clara, CA 95054
Mar 09, 2012 Weighing 56 lb, model XTD-750KHE antenna mountable traveling wave tube amplifier (TWTA) is designed for Ku-band SATCOM uplinks and draws 1,450 W at 270 W of linear RF output power. Complete serial M&C system is built into unit, and remote external controller is available to operate high power amplifier (HPA) from user-selected location. Suited for transportable applications, product delivers 750 W peak power performance.

Mini-Circuits    Brooklyn, NY 11235
Feb 20, 2012 Operating from 3-5 Vdc supply, surface mount Model PSA4-5043+ provides IP3 as high as 33 dBm, output power levels up to +21 dBm, and on-die ESD protection rated to over 500 V, making device suited for wide range of 50 MHz to 4 GHz applications. MAC Ceramic Hermetic Mixers, covering frequency range from 0.3-12 GHz, feature LO levels from 4-17 dBm. Devices deliver broadband performance suitable for instrumentation, with case that meets/exceeds aerospace and military ground requirements.

Mini-Circuits    Brooklyn, NY 11235
Jun 13, 2011 Measuring 0.75 x 0.74 x 0.46 in., 5-20 GHz Model ZX60-24+ features internal compensating circuitry for high gain, flat response of 24 dB ±1.3 dB typical. Two-stage unit, designed for 50 W SMA coax systems, comes in gold-plated package with nickel-plated brass cover and unibody construction. Operating on 5 Vdc, coaxial amplifier is suited for applications ranging from microwave radio and radar to military communications, satellite communications, and countermeasures.

Instruments For Industry, Inc.    Ronkonkoma, NY 11779
Mar 28, 2011 Supporting frequency range of 1.0-18.0 GHz, S/T 20 Series features compact design in single drawer measuring 7 x 19 x 24 in., depending on power level and options. Applications include MIL-STD-461/462, RTCA/D0-160, SAE Specifications, Radiated Susceptibility, Bellcore testing, and broadband communications.

Giga-tronics, Inc.    San Ramon, CA 94583
Feb 09, 2011 Model GT-1020A Instrument-Grade Broadband Microwave Power Amplifiers, covering 100 MHz to 20 GHz frequencies, and GT-1040A models, covering 10 MHz to 40 GHz, have flat frequency response, low noise figure, and low harmonics. Solid-state amplifiers provide ½ W at 20 GHz and ¼ W at 40 GHz with greater than 25 dB gain and less than 6 dB noise figure. Gain flatness is typically ±2.5 dB over full frequency range. Units can be placed close to device under test to minimize cable loss.

Maxim Integrated Products    Sunnyvale, CA 94086
Dec 20, 2010 Incorporating 9 circuit functions, dual-channel Model MAX2062 can serve as IF or RF VGA, interfacing directly with 50 W systems operating over 50-1,000 MHz frequency range. Unit provides rapid-fire gain selection for 4 customized attenuation states per path. In typical configuration, cascade yields total gain range of 64 dB, max gain of 19.4 dB, and noise figure of 7.3 dB. Dedicated 8-bit control DACs allow user to adjust analog attenuation in 0.12 dB increments through SPI command.

Endwave Corp.    San Jose, CA 95134
Oct 08, 2010 Supplied as RoHS-compliant, 3.12 x 1.63 x 0.1 mm die, EWH2001ZZ monolithic microwave integrated circuit (MMIC) distributed power amplifier is based on GaAs pHEMT technology. It delivers +26 dBm typ output power at 1 dB compression through 12 GHz (+23 dBm typ to 20 GHz). Small-signal gain is 19 dB typ at 2 GHz and 18 dB typ at 20 GHz, with gain flatness of ±2 dB from DC to 20 GHz. Product is 100% DC and RF tested and visually inspected to MIL-STD-883, Method 2010 requirements.

Avago Technologies    San Jose, CA 95131
Mar 25, 2010 Developed using InGaP Hetero-Junction Bipolar Transistor technology, Models AVT-51663/53663 are internally matched to 50 W and designed in Darlington configuration. At 5 V/37 mA, Model AVT-51663 features 19.0 dB gain, 24 dBm OIP3, 12.5 dBm P1dB, and 3.2 dBm noise figure at 2,000 MHz. Model AVT-53663, operating at 5 V/48 mA, delivers 19.5 dB Gain, 5 dBm OIP3, 15 dBm P1dB, and 3.2 dB noise figure at 2,000 MHz. Applications include WiMAX, wireless base stations, satellite TV, and set-top boxes.

Cree, Inc.    Durham, NC 27703
Jan 22, 2010 Suited for military and ISM (industrial, scientific, and medical) applications, CMPA0060025F offers 25 W output power over bandwidth of 20 MHz to 6 GHz. Compact amplifier can operate with supply voltages up to 50 V and has power gain of 12 dB typical.

TriQuint Semiconductor, Inc.    Hillsboro, OR 97124
Jan 08, 2010 Covering 17-24 GHz frequency range, Model TGA4531 facilitates 3G/4G wireless network RF design. Microwave backhaul radio amplifier provides 32 dBm nominal output power at 15 dBm input power, with small signal gain of 23 dB. Nominal TOI is 40 dBm and noise figure is 6 dB. Highly linear amplifier enables manufacturers to meet complex modulation requirements and is also well suited for K-band sat-com applications.