Ambient Light Sensing Photodiode helps conserve energy.

Supplied in 0805-sized, SMT package with 0.85 mm profile and 2-pin connection, AEC-Q101-Qualified TEMD6200FX01 reacts to light for automatic control of LCD brightness and keypad backlighting in automotive applications. Integrated IR filtering epoxy technology matches spectral sensitivity of human eye, with minimal sensitivity to light beyond visible range. Characteristics include angle of half...

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Photodiode Arrays feature 4-element design.

Designed for 40 Gb/s and 100 Gb/s optical communications, Quad InGaAs Photodiode Arrays consist of 4 photodiodes monolithically integrated on common InP substrate. Diodes are available in 10, 30, 40, or 50 Â-µm diameters and feature RF bandwidth of 10, 15, 20, or 40 GHz. With optical power handling exceeding +12dBm for each photodiode, arrays are suited for 100 Gb/s Long-Haul Pol-Mux (D)QPSK,...

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Nextreme and Voxtel Announce the World's First OptoCooler Equipped Avalanche Photodiode

Thin-film thermoelectric device cools photon detector in a small package for improved efficiency, performance and reliability... DURHAM, N.C. (October 29, 2008) - Nextreme Thermal Solutions, the leader in microscale thermal and power management products for the electronics industry, today announced that Voxtel, Inc., a leading developer of sophisticated detectors and electrooptical imaging...

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Infrared Emitters operate in 940 nm wavelength.

Complaint to automotive AEC-Q101 standard, emitters are available in 1.8 mm (TÂ-¾) gullwing (VSMB2020X01), reverse gullwing (VSMB2000X01), PLCC2 (VSMB3940X01), and 0805 (VSMB1940X01) surface-mount packages. Model PLCC2 VSMB3940X01 features typical forward voltage of 1.35 V, and spectral bandwidth of 25 nm. Radiant intensity is 6 mW/sr for VSMB1940X01 and 40 mW/sr for model VSMB2020X01. Both...

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N-Channel MOSFET is co-packaged with power diode.

Offered in PowerPAKÂ-® SC-70 package, SiA850DJ, 190 V N-channel power MOSFET plus co-packaged 190 V power diode provides on-resistance values from 17 W at 1.8 V VGS to 3.8 V at 4.5 V VGS, and diode forward voltage of 1.2 V at 0.5 A. Lead free, halogen-free, and RoHS-compliant product suits applications in high-voltage piezo-electric motors and organic LED backlighting in portable devices.

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X-Ray Detector features large active area.

X-Ray Detector features large active area.

AXUV 100GX Absolute X-ray Photodiode possesses known active silicon thicknesses and 100% internal quantum efficiency, enabling absolute measurement of X-ray flux with energies 100 keV and beyond. Requiring no external voltage, detector has 10 x 10 mm square active area with room-temperature operation. Nitrided-oxide front window provides up to one Gigarad (SiO2) of radiation hardness. Photodiodes...

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Murrelektronik's MB Cap Ultra Protects against Voltage Fluctuations

Murrelektronik's MB Cap Ultra Protects against Voltage Fluctuations

Duluth, Georgia, January 10, 2009 - Murrelektronik designed the MB Cap Ultra after noting an increased frequency of voltage drops in industrial processes was resulting in a considerable loss of time, money and process data. Capable of being integrated into new and existing power supply systems, the buffer module protects production processes and installations against voltage fluctuations that...

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Comprehensive LED Design Kit Offers Broad Selection of Lighting Technologies

Comprehensive LED Design Kit Offers Broad Selection of Lighting Technologies

PACOIMA, CA (January 6, 2009) - JKL Components Corporation's new LED designer kit GB-LED1 is now available to product development engineers and technicians with the aim of speedy project completion in mind. It includes a full spectrum of LED technologies, and contains a full compliment of LED products appropriate for most design needs. GB-LED1 contains component LEDs, including surface mount and...

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Photodetector-Preamplifier suits low-light-level tasks.

Photodetector-Preamplifier suits low-light-level tasks.

Suited for tight spaces, 6 mmÂ-² Model ODA-6W-100M includes shielded amplifier electronics and operates in NIR wavelength with response at 940 nm. Standard version features 500 MW gain with custom gains also available. Housed in hermetically sealed TO-39 package, infrared component's operating and storage temperature ranges from -25 to +100Â-

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