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San Jose, CA 95134
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Toshiba Adds Family of High-Voltage Power Mosfets Using Advanced π-MOS Vii Process Technology for AC/DC and Ballast Applications
500V and 600V MOSFETs Combine Advanced Process Technology with Optimized Planar Cell Structure to Increase Power Density and Efficiency IRVINE, Calif., January 20, 2009 - Toshiba America Electronic Components, Inc. (TAEC)* today introduced a new series of high-voltage ð-MOS VII MOSFETs that combine advanced process technology with a planar process to provide a wide selection of voltage and...
Read More »Toshiba Adds Family of High-Voltage Power Mosfets Using Advanced π-MOS Vii Process Technology for AC/DC and Ballast Applications
500V and 600V MOSFETs Combine Advanced Process Technology with Optimized Planar Cell Structure to Increase Power Density and Efficiency IRVINE, Calif., January 20, 2009 - Toshiba America Electronic Components, Inc. (TAEC)* today introduced a new series of high-voltage ð-MOS VII MOSFETs that combine advanced process technology with a planar process to provide a wide selection of voltage and...
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Flash Memories are offered in versions up to 64 GB.
Manufactured with 43 nm process technology, single-level cell (SLC) NAND flash memories are available in 16 models with densities ranging from 512 MB to 64 GB. Units can read and write large amounts of data at high speed and are suited for use in mobile phones, flat panel TVs, OA equipment, and servers. Models in BGA and TSOP I packages are available.
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Flash Memories are offered in versions up to 64 GB.
Manufactured with 43 nm process technology, single-level cell (SLC) NAND flash memories are available in 16 models with densities ranging from 512 MB to 64 GB. Units can read and write large amounts of data at high speed and are suited for use in mobile phones, flat panel TVs, OA equipment, and servers. Models in BGA and TSOP I packages are available.
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Solid State Drives are available in 2.5 in., 512 GB version.
Flash-based drives based on 43 nm multilevel cell NAND are available in 64, 128, 256 and 512 GB models in 1.8 or 2.5 in. drive enclosures or as SSD Flash Modules. Drives utilize MLC controller that achieves parallel data transfers and wear leveling to optimize performance. Maximum sequential read speed of SSDs is 240 Mbps and maximum sequential write speed is 200 Mbps. Units also include AES data...
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Solid State Drives are available in 2.5 in., 512 GB version.
Flash-based drives based on 43 nm multilevel cell NAND are available in 64, 128, 256 and 512 GB models in 1.8 or 2.5 in. drive enclosures or as SSD Flash Modules. Drives utilize MLC controller that achieves parallel data transfers and wear leveling to optimize performance. Maximum sequential read speed of SSDs is 240 Mbps and maximum sequential write speed is 200 Mbps. Units also include AES data...
Read More »Toshiba Develops Cost-Effective 32 nm CMOS Platform Technology by Advanced Single Exposure Lithography
TOKYO - Toshiba Corporation (TOKYO: 6502) today announced a cost-effective 32nm CMOS platform technology that offers higher density and improved performance while halving the cost per function from 45nm technology. The platform was achieved by application of advanced single exposure lithography and gate-first metal gate/high-K process technology. This technology enables a 0.124 -µm2 SRAM cell...
Read More »Toshiba Develops Cost-Effective 32 nm CMOS Platform Technology by Advanced Single Exposure Lithography
TOKYO - Toshiba Corporation (TOKYO: 6502) today announced a cost-effective 32nm CMOS platform technology that offers higher density and improved performance while halving the cost per function from 45nm technology. The platform was achieved by application of advanced single exposure lithography and gate-first metal gate/high-K process technology. This technology enables a 0.124 Ã-µm2 SRAM...
Read More »Solid State Drives feature serial attached SCSI interface.
Intended for enterprise applications, Single Level Cell NAND-based SSDs offer up to 25,000/20,000 random Input/Output operations/sec for 4 KB data block size read/write, and storage capacities up to 100 GB. Drives are available in 2.5 in. small form factor and feature dual ported SAS redundancy and non-volatile cache. Applications include servers, direct-attached storage, and network-attached...
Read More »Solid State Drives feature serial attached SCSI interface.
Intended for enterprise applications, Single Level Cell NAND-based SSDs offer up to 25,000/20,000 random Input/Output operations/sec for 4 KB data block size read/write, and storage capacities up to 100 GB. Drives are available in 2.5 in. small form factor and feature dual ported SAS redundancy and non-volatile cache. Applications include servers, direct-attached storage, and network-attached...
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