OCZ Storage Solutions
San Jose, CA 95134
TCR13AGADJ Low Dropout Regulator features under-voltage-lockout function.
Used in notebook PCs, digital video cameras, storage products and set-top boxes, TCR13AGADJ Low Dropout Regulator provides 92mV and 163mV of minimum and maximum dropout voltage at Vout=0.9V, Iout=1.0A respectively. Housed in 0.8mm x 1.2mm WCSP6F package, unit offers 90dB of ripple rejection ratio at Vout=0.9V and f=1kHz. Delivering adjustable output voltage of 0.55V to 3.6V range, product...
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Storage Solutions as Individual as Your Business
Enterprise HDDs Toshiba provides several classes of enterprise HDDs to support both mission and business critical Enterprise applications that demand high capacity and reliable performance in 24x7 operating environments. Large capacities Up to 15K RPM rotational performance Available in 2.5 and 3.5- Inch form factors Available in SAS and SATA Interfaces 24/7 Mission Critical Workload Performance...
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Schottky Barrier Diodes are suitable for voltage boosting circuits for LCDs.
Available in CCS15F40, CUS15F40, CBS10F40, CUS10F40, CTS05F40, and CUS05F40 models, Schottky Barrier Diodes feature reverse voltage of 40 V. Having 130pF of total capacitance at zero reverse voltage, CCS15F40 provides 25μA of maximum reverse current. Diodes come in SOD-323, CST2C, CST2B and SOD-882 packages and are used in white LED backlights.
Read More »Gate Drive Photocouplers feature rail-to-rail output.
Available in TLP5771, TLP5772 and TLP5774 models with 1A, 2.5A and 4A peak output currents, IGBT/MOSFET-Drive Photocouplers offer 35kV/µs common-mode rejection. Reducing power loss during switching and operating voltage to 10V, units come in 2.3mm height SO6L package. Having 110°C of maximum operating temperature, couplers are used in AC drives, compact motor drivers, industrial sewing machines...
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BiCS FLASH 3D Flash Memory uses 3-bit-per-cell TLC technology.
Suitable for enterprise and consumer solid state drive applications, BiCS FLASH 3D Flash Memory is based on cutting edge, third generation, 64-layer stacking process. Increasing memory capacity per silicon wafer, unit comes with 16-die stacked architecture, in single package and offers 512 Gb memory capacity.
Read More »N-channel MOSFETs for electric power switching applications.
Used as load switches in smartphones and tablets, N-channel MOSFETs: 30V SSM6K513NU and 40V SSM6K514NU uses trench process for efficiency. Unit reduces output charge and on-resistance to 6.5mOhm and 8.9mOhm respectively and reduces heat dissipation by 40%. Unit meets USB Type-C and USB Power Delivery standards. Unit is compact and consumes low power.
Read More »Photorelays feature drive currents from 0.4 to 5 A.
Supplied in DIP8 package, models TLP3547, TLP3548, and TLP3549 offer pulsed ON-state current and can be used to replace mechanical relays in industrial applications. Total lack of physical contacts eliminates wear and deterioration concerns. While TLP3547 is 60 V photorelay with 5 A (max) drive current, 400 V TLP3548 features 0.4 A max drive current and high-speed switching of 1...
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SLC NAND Flash Memory (24 nm) targets industrial applications.
Based on 4 x 4 Gb die and supplied in 48-pin TSOP, 16 Gb BENAND™ is optimized for effective write endurance (using 8-bit BCH ECC) as well as read/write performance. ECC is not required from host controller, and this enables use with host controllers that do not have 8-bit ECC capability. Delivering long-term process support, product operates from 2.7–3.3 V supply over -40 to +85°C range...
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N-Channel Power MOSFET targets automotive applications.
Fabricated using U-MOS-VIII-H process node, AEC-Q101 qualified TK160F10N1L (100 V, 160 A) keeps current balances in parallel operation in automotive applications. TO-220SM(W) package incorporates copper connector technology for optimal current handling and thermal as well as minimal package resistance, and design promotes reliability by eliminating bond wires. Characteristics include max...
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High-Voltage MOSFETs enable efficient, high-speed switching.
Targeting switching voltage regulator designs, N-channel enhancement mode MOSFETs are based on pi-MOS VIII (Pi-MOS-8) planar semiconductor process. Max leakage current is 10 µA, and gate threshold voltage range is 2.5–4.0 V. While 2.5 A TK3A90E and 4.5 A TK5A90E feature VDSS ratings of 900 V and respective RDS(ON) ratings of 3.7 and 2.5 Ω (typ), 4.0 A TK4A80E and 5.0A TK5A80E offer...
Read More »TCR13AGADJ Low Dropout Regulator features under-voltage-lockout function.
Used in notebook PCs, digital video cameras, storage products and set-top boxes, TCR13AGADJ Low Dropout Regulator provides 92mV and 163mV of minimum and maximum dropout voltage at Vout=0.9V, Iout=1.0A respectively. Housed in 0.8mm x 1.2mm WCSP6F package, unit offers 90dB of ripple rejection ratio at Vout=0.9V and f=1kHz. Delivering adjustable output voltage of 0.55V to 3.6V range, product...
Read More »
Storage Solutions as Individual as Your Business
Enterprise HDDs Toshiba provides several classes of enterprise HDDs to support both mission and business critical Enterprise applications that demand high capacity and reliable performance in 24x7 operating environments. Large capacities Up to 15K RPM rotational performance Available in 2.5 and 3.5- Inch form factors Available in SAS and SATA Interfaces 24/7 Mission Critical Workload Performance...
Read More »
Schottky Barrier Diodes are suitable for voltage boosting circuits for LCDs.
Available in CCS15F40, CUS15F40, CBS10F40, CUS10F40, CTS05F40, and CUS05F40 models, Schottky Barrier Diodes feature reverse voltage of 40 V. Having 130pF of total capacitance at zero reverse voltage, CCS15F40 provides 25μA of maximum reverse current. Diodes come in SOD-323, CST2C, CST2B and SOD-882 packages and are used in white LED backlights.
Read More »Gate Drive Photocouplers feature rail-to-rail output.
Available in TLP5771, TLP5772 and TLP5774 models with 1A, 2.5A and 4A peak output currents, IGBT/MOSFET-Drive Photocouplers offer 35kV/µs common-mode rejection. Reducing power loss during switching and operating voltage to 10V, units come in 2.3mm height SO6L package. Having 110°C of maximum operating temperature, couplers are used in AC drives, compact motor drivers, industrial sewing machines...
Read More »
BiCS FLASH 3D Flash Memory uses 3-bit-per-cell TLC technology.
Suitable for enterprise and consumer solid state drive applications, BiCS FLASH 3D Flash Memory is based on cutting edge, third generation, 64-layer stacking process. Increasing memory capacity per silicon wafer, unit comes with 16-die stacked architecture, in single package and offers 512 Gb memory capacity.
Read More »N-channel MOSFETs for electric power switching applications.
Used as load switches in smartphones and tablets, N-channel MOSFETs: 30V SSM6K513NU and 40V SSM6K514NU uses trench process for efficiency. Unit reduces output charge and on-resistance to 6.5mOhm and 8.9mOhm respectively and reduces heat dissipation by 40%. Unit meets USB Type-C and USB Power Delivery standards. Unit is compact and consumes low power.
Read More »Photorelays feature drive currents from 0.4 to 5 A.
Supplied in DIP8 package, models TLP3547, TLP3548, and TLP3549 offer pulsed ON-state current and can be used to replace mechanical relays in industrial applications. Total lack of physical contacts eliminates wear and deterioration concerns. While TLP3547 is 60 V photorelay with 5 A (max) drive current, 400 V TLP3548 features 0.4 A max drive current and high-speed switching of 1...
Read More »
SLC NAND Flash Memory (24 nm) targets industrial applications.
Based on 4 x 4 Gb die and supplied in 48-pin TSOP, 16 Gb BENAND™ is optimized for effective write endurance (using 8-bit BCH ECC) as well as read/write performance. ECC is not required from host controller, and this enables use with host controllers that do not have 8-bit ECC capability. Delivering long-term process support, product operates from 2.7–3.3 V supply over -40 to +85°C range...
Read More »
N-Channel Power MOSFET targets automotive applications.
Fabricated using U-MOS-VIII-H process node, AEC-Q101 qualified TK160F10N1L (100 V, 160 A) keeps current balances in parallel operation in automotive applications. TO-220SM(W) package incorporates copper connector technology for optimal current handling and thermal as well as minimal package resistance, and design promotes reliability by eliminating bond wires. Characteristics include max...
Read More »
High-Voltage MOSFETs enable efficient, high-speed switching.
Targeting switching voltage regulator designs, N-channel enhancement mode MOSFETs are based on pi-MOS VIII (Pi-MOS-8) planar semiconductor process. Max leakage current is 10 µA, and gate threshold voltage range is 2.5–4.0 V. While 2.5 A TK3A90E and 4.5 A TK5A90E feature VDSS ratings of 900 V and respective RDS(ON) ratings of 3.7 and 2.5 Ω (typ), 4.0 A TK4A80E and 5.0A TK5A80E offer...
Read More »
