Opto Diode Corporation

Thin-Film Filter Photodetectors are operated in a temperature range of -10
Electronic Components & Devices

Thin-Film Filter Photodetectors are operated in a temperature range of -10

Thin-Film Filter Photodetectors are available in SXUV100TF135 and SXUV100TF135B versions. Units offer 100 mm² active areas and can detect between 12 nm and 18 nm. Products provide typical responsivity of 0.09 A/W at 13.5 nm and are suitable for laser power monitoring, semiconductor photolithography and metrology system applications. Photodetectors are operated in a temperature range of -20 °C...

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BXT2-17TF Infrared Detector comes in a standard TO37 can.
Sensors, Monitors & Transducers

BXT2-17TF Infrared Detector comes in a standard TO37 can.

BXT2-17TF Infrared Detector is equipped with 4.67 µm optical bandpass silicon filter. Unit is operated in a temperature range of -40 °C to +85 °C and comes with 2 mm² active area. Product is suitable for carbon monoxide gas analysis, environmental monitoring, process control systems, and industrial burner monitoring and control. This thermoelectrically-cooled detector is integrated with a...

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NXIR-5C Photodiode meets RoHS and REACH standards.
Electronic Components & Devices

NXIR-5C Photodiode meets RoHS and REACH standards.

Offering a sensitivity of 0.62 A/W at 850 nm and 0.35 A/W at 1064 nm, NXIR-5C NIR Photodiode are housed in 4.7 mm x 4.9 mm ceramic carrier surface-mount device package with 5 mm^2 active area. Featuring 320 nm to 1100 nm spectral response, unit has 1nA dark current, 5 pF capacitance at 10 volts, and greater than 100 MΩ shunt resistance. Operated in -40°C to +125°C, photodiode is available on...

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NXIR-RF100C NIR SMD Photodiodes feature anti-reflective coated window.
Electronic Components & Devices

NXIR-RF100C NIR SMD Photodiodes feature anti-reflective coated window.

Used in laser-monitoring, rain and sun-sensor applications, NXIR-RF100C SMD Photodiodes come in 3mm x 3.5mm rugged package with 1mm2 active area. Operated in -40°C to +125°C temperature range, product features anti-reflective coated window for providing >98% transmission. Delivering 0.62 A/W at 850nm and 0.35 A/W at 1064nm responsivity, product offers 3pF capacitance at 0V, shunt resistance >...

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OD-685C LED is RoHS compliant.
Electronic Components & Devices

OD-685C LED is RoHS compliant.

Suitable for biological analysis, health, science and veterinary applications, OD-685C LED is operated in -65°C to +125°C temperature. Having 110 mW total power dissipation, unit offers 50 mA continuous forward current and 100 mA peak forward current. Delivering 2.0mW of radiant power at forward current of 20mA, LED provides 685nm peak wavelength. Product is rated to forward voltage of 1.8V...

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Low-noise EUV photodetector SXUV20C feature 20 mm circular active area.
Electronic Components & Devices

Low-noise EUV photodetector SXUV20C feature 20 mm circular active area.

Designed to have stability for a longer time during exposure to high intensity EUV energy and possessing high responsivity in wavelengths 1nm to 200 nm, Opto Diode’s SXUV20C is a low-noise extreme UV photodetector with 20 mm² circular active area, that can align easily with an EUV laser. Applied in UV laser units and applications that require critical measurements of power and speed,...

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Near-Infrared Detectors support back-facet laser-monitoring.
Communication Systems & Equipment

Near-Infrared Detectors support back-facet laser-monitoring.

Featuring active area of 0.36 mm-² and 0.70 mm², respectively, NXIR-RF36 and NXIR-RF70 Detectors are suited for integration with semiconductor lasers, including Fabry-Perot, distributed feedback, and vertical-cavity surface-emitting lasers. Devices have responsivity of 0.65 A/W at 850 nm, capacitance of 5 pF at 0 V, and shunt resistance greater than 200 MΩ. Suitable for use with YAG...

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Infrared Emitter operates over ranges from -65 to +150
Electronic Components & Devices

Infrared Emitter operates over ranges from -65 to +150

Designed for military and industrial markets, OD-850WHT gallium aluminum arsenide (GaAlAs) IR light emitting diode has peak emission of 850 nm, optical half intensity beam angle of 80°, and typical optical power output from 24–28 mW. Device can operate without heat sinking and without derating to 80°C without any internal coatings. Available in hermetically-sealed, standard 2-lead TO-46...

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Photodiode features 4.1 mm diameter active area.
Electronic Components & Devices

Photodiode features 4.1 mm diameter active area.

With responsivity under test conditions at 254 nm, Model UVG12 features minimum A/W of 0.105, typical response of 0.115, and max response of 0.125. Photodiode is designed for detection from 193–400 nm and operates at 100% internal quantum efficiency in UV and visible regions. Extremely stable, 13 mm-² device exhibits less than 2% drop in responsivity after exposure to megajoules/cm² of 254...

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Electronic Components & Devices

GaAlAs NIR Emitters are built to serve rugged applications.

Designed for night vision and surveillance and housed in 3-lead, TO-39 hermetically sealed packages that measure 0.026 x 0.026 in., RoHS-compliant OD-110W offers uniform optical beam with- 850 nm typ peak emission wavelength and 140 mW optical output. All surfaces feature gold plating, and 4 wire bonds positioned on die corners minimize potential artifacts in imaging applications....

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Thin-Film Filter Photodetectors are operated in a temperature range of -10
Electronic Components & Devices

Thin-Film Filter Photodetectors are operated in a temperature range of -10

Thin-Film Filter Photodetectors are available in SXUV100TF135 and SXUV100TF135B versions. Units offer 100 mm² active areas and can detect between 12 nm and 18 nm. Products provide typical responsivity of 0.09 A/W at 13.5 nm and are suitable for laser power monitoring, semiconductor photolithography and metrology system applications. Photodetectors are operated in a temperature range of -20 °C...

Read More »
BXT2-17TF Infrared Detector comes in a standard TO37 can.
Sensors, Monitors & Transducers

BXT2-17TF Infrared Detector comes in a standard TO37 can.

BXT2-17TF Infrared Detector is equipped with 4.67 µm optical bandpass silicon filter. Unit is operated in a temperature range of -40 °C to +85 °C and comes with 2 mm² active area. Product is suitable for carbon monoxide gas analysis, environmental monitoring, process control systems, and industrial burner monitoring and control. This thermoelectrically-cooled detector is integrated with a...

Read More »
NXIR-5C Photodiode meets RoHS and REACH standards.
Electronic Components & Devices

NXIR-5C Photodiode meets RoHS and REACH standards.

Offering a sensitivity of 0.62 A/W at 850 nm and 0.35 A/W at 1064 nm, NXIR-5C NIR Photodiode are housed in 4.7 mm x 4.9 mm ceramic carrier surface-mount device package with 5 mm^2 active area. Featuring 320 nm to 1100 nm spectral response, unit has 1nA dark current, 5 pF capacitance at 10 volts, and greater than 100 MΩ shunt resistance. Operated in -40°C to +125°C, photodiode is available on...

Read More »
NXIR-RF100C NIR SMD Photodiodes feature anti-reflective coated window.
Electronic Components & Devices

NXIR-RF100C NIR SMD Photodiodes feature anti-reflective coated window.

Used in laser-monitoring, rain and sun-sensor applications, NXIR-RF100C SMD Photodiodes come in 3mm x 3.5mm rugged package with 1mm2 active area. Operated in -40°C to +125°C temperature range, product features anti-reflective coated window for providing >98% transmission. Delivering 0.62 A/W at 850nm and 0.35 A/W at 1064nm responsivity, product offers 3pF capacitance at 0V, shunt resistance >...

Read More »
OD-685C LED is RoHS compliant.
Electronic Components & Devices

OD-685C LED is RoHS compliant.

Suitable for biological analysis, health, science and veterinary applications, OD-685C LED is operated in -65°C to +125°C temperature. Having 110 mW total power dissipation, unit offers 50 mA continuous forward current and 100 mA peak forward current. Delivering 2.0mW of radiant power at forward current of 20mA, LED provides 685nm peak wavelength. Product is rated to forward voltage of 1.8V...

Read More »
Low-noise EUV photodetector SXUV20C feature 20 mm circular active area.
Electronic Components & Devices

Low-noise EUV photodetector SXUV20C feature 20 mm circular active area.

Designed to have stability for a longer time during exposure to high intensity EUV energy and possessing high responsivity in wavelengths 1nm to 200 nm, Opto Diode’s SXUV20C is a low-noise extreme UV photodetector with 20 mm² circular active area, that can align easily with an EUV laser. Applied in UV laser units and applications that require critical measurements of power and speed,...

Read More »
Near-Infrared Detectors support back-facet laser-monitoring.
Communication Systems & Equipment

Near-Infrared Detectors support back-facet laser-monitoring.

Featuring active area of 0.36 mm-² and 0.70 mm², respectively, NXIR-RF36 and NXIR-RF70 Detectors are suited for integration with semiconductor lasers, including Fabry-Perot, distributed feedback, and vertical-cavity surface-emitting lasers. Devices have responsivity of 0.65 A/W at 850 nm, capacitance of 5 pF at 0 V, and shunt resistance greater than 200 MΩ. Suitable for use with YAG...

Read More »
Infrared Emitter operates over ranges from -65 to +150
Electronic Components & Devices

Infrared Emitter operates over ranges from -65 to +150

Designed for military and industrial markets, OD-850WHT gallium aluminum arsenide (GaAlAs) IR light emitting diode has peak emission of 850 nm, optical half intensity beam angle of 80°, and typical optical power output from 24–28 mW. Device can operate without heat sinking and without derating to 80°C without any internal coatings. Available in hermetically-sealed, standard 2-lead TO-46...

Read More »
Photodiode features 4.1 mm diameter active area.
Electronic Components & Devices

Photodiode features 4.1 mm diameter active area.

With responsivity under test conditions at 254 nm, Model UVG12 features minimum A/W of 0.105, typical response of 0.115, and max response of 0.125. Photodiode is designed for detection from 193–400 nm and operates at 100% internal quantum efficiency in UV and visible regions. Extremely stable, 13 mm-² device exhibits less than 2% drop in responsivity after exposure to megajoules/cm² of 254...

Read More »
Electronic Components & Devices

GaAlAs NIR Emitters are built to serve rugged applications.

Designed for night vision and surveillance and housed in 3-lead, TO-39 hermetically sealed packages that measure 0.026 x 0.026 in., RoHS-compliant OD-110W offers uniform optical beam with- 850 nm typ peak emission wavelength and 140 mW optical output. All surfaces feature gold plating, and 4 wire bonds positioned on die corners minimize potential artifacts in imaging applications....

Read More »

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