Company News

Opto Diode Corporation

1260 Calle Suerte, Camarillo, CA, 93012, USA

  • 805-465-8700

Latest New Product News from
Opto Diode Corporation

Electronic Components & Devices, Optics & Photonics

Thin-Film Filter Photodetectors are operated in a temperature range of -10 C to +40 C.

Dec 14, 2017

Thin-Film Filter Photodetectors are available in SXUV100TF135 and SXUV100TF135B versions. Units offer 100 mm² active areas and can detect between 12 nm and 18 nm. Products provide typical responsivity of 0.09 A/W at 13.5 nm and are suitable for laser power monitoring, semiconductor photolithography and metrology system applications. Photodetectors are operated in a temperature range of -20... Read More

Sensors Monitors & Transducers, Test & Measuring Instruments

BXT2-17TF Infrared Detector comes in a standard TO37 can.

Oct 17, 2017

BXT2-17TF Infrared Detector is equipped with 4.67 µm optical bandpass silicon filter. Unit is operated in a temperature range of -40 °C to +85 °C and comes with 2 mm² active area. Product is suitable for carbon monoxide gas analysis, environmental monitoring, process control systems, and industrial burner monitoring and control. This thermoelectrically-cooled detector is integrated with a... Read More

Electronic Components & Devices, Optics & Photonics

NXIR-5C Photodiode meets RoHS and REACH standards.

Apr 03, 2017

Offering a sensitivity of 0.62 A/W at 850 nm and 0.35 A/W at 1064 nm, NXIR-5C NIR Photodiode are housed in 4.7 mm x 4.9 mm ceramic carrier surface-mount device package with 5 mm^2 active area. Featuring 320 nm to 1100 nm spectral response, unit has 1nA dark current, 5 pF capacitance at 10 volts, and greater than 100 MΩ shunt resistance. Operated in -40°C to +125°C, photodiode is available... Read More

Electronic Components & Devices, Optics & Photonics

NXIR-RF100C NIR SMD Photodiodes feature anti-reflective coated window.

Feb 01, 2017

Used in laser-monitoring, rain and sun-sensor applications, NXIR-RF100C SMD Photodiodes come in 3mm x 3.5mm rugged package with 1mm2 active area. Operated in -40°C to +125°C temperature range, product features anti-reflective coated window for providing >98% transmission. Delivering 0.62 A/W at 850nm and 0.35 A/W at 1064nm responsivity, product offers 3pF capacitance at 0V, shunt resistance... Read More

Electronic Components & Devices

OD-685C LED is RoHS compliant.

Jan 19, 2017

Suitable for biological analysis, health, science and veterinary applications, OD-685C LED is operated in -65°C to +125°C temperature. Having 110 mW total power dissipation, unit offers 50 mA continuous forward current and 100 mA peak forward current. Delivering 2.0mW of radiant power at forward current of 20mA, LED provides 685nm peak wavelength. Product is rated to forward voltage of 1.8V... Read More

Electronic Components & Devices, Sensors Monitors & Transducers

Low-noise EUV photodetector SXUV20C feature 20 mm circular active area.

Oct 18, 2016

Designed to have stability for a longer time during exposure to high intensity EUV energy and possessing high responsivity in wavelengths 1nm to 200 nm, Opto Diode’s SXUV20C is a low-noise extreme UV photodetector with 20 mm² circular active area, that can align easily with an EUV laser. Applied in UV laser units and applications that require critical measurements of power and speed,... Read More

Electronic Components & Devices, Optics & Photonics, Sensors Monitors & Transducers, Test & Measuring Instruments

Near-Infrared Detectors support back-facet laser-monitoring.

Jan 19, 2016

Featuring active area of 0.36 mm² and 0.70 mm², respectively, NXIR-RF36 and NXIR-RF70 Detectors are suited for integration with semiconductor lasers, including Fabry-Perot, distributed feedback, and vertical-cavity surface-emitting lasers. Devices have responsivity of 0.65 A/W at 850 nm, capacitance of 5 pF at 0 V, and shunt resistance greater than 200 MΩ. Suitable for use with YAG lasers,... Read More

Display & Presentation Equipment, Electronic Components & Devices, Vision Systems

Infrared Emitter operates over ranges from -65 to +150C.

Sep 28, 2015

Designed for military and industrial markets, OD-850WHT gallium aluminum arsenide (GaAlAs) IR light emitting diode has peak emission of 850 nm, optical half intensity beam angle of 80°, and typical optical power output from 24–28 mW. Device can operate without heat sinking and without derating to 80°C without any internal coatings. Available in hermetically-sealed, standard 2-lead TO-46... Read More

Electronic Components & Devices, Optics & Photonics

Photodiode features 4.1 mm diameter active area.

Aug 24, 2015

With responsivity under test conditions at 254 nm, Model UVG12 features minimum A/W of 0.105, typical response of 0.115, and max response of 0.125. Photodiode is designed for detection from 193–400 nm and operates at 100% internal quantum efficiency in UV and visible regions. Extremely stable, 13 mm² device exhibits less than 2% drop in responsivity after exposure to megajoules/cm² of 254 nm... Read More

Electronic Components & Devices

GaAlAs NIR Emitters are built to serve rugged applications.

Jul 09, 2015

Designed for night vision and surveillance and housed in 3-lead, TO-39 hermetically sealed packages that measure 0.026 x 0.026 in., RoHS-compliant OD-110W offers uniform optical beam with 850 nm typ peak emission wavelength and 140 mW optical output. All surfaces feature gold plating, and 4 wire bonds positioned on die corners minimize potential artifacts in imaging applications. Half... Read More

Sensors Monitors & Transducers, Test & Measuring Instruments

IR Detectors feature anti-reflective-coated silicon windows.

Jan 16, 2015

Providing optimal sensitivity across mid-IR spectrum from 1.2–5.5 µm, SCD-B Series delivers high performance of lead salt detectors while minimizing harmful radiation. Single-channel infrared detectors are suited for medical diagnostics, environmental gas analysis, and process control applications. Read More

Electronic Components & Devices, Optics & Photonics

Photodiode provides 331 mm of active area.

Dec 23, 2014

Housed in windowless ceramic package with 22.05 x 15.85 mm rectangular active area, Model SXUV300C detects energy from extreme ultraviolet wavelengths of 1–1,000 nm. Device offers sizeable surface for reflective scatter measurements of high-powered UV lasers, and provides stable responsivity even after prolonged exposure to high-powered UV radiation. Read More

Electronic Components & Devices, Optics & Photonics

Responsivity-Optimized Photodiode features 331 mm active area.

Dec 18, 2014

Able to detect energy from extreme UV wavelengths of 1–1,000 nm, SXUV300C features 22.05 x 15.85 mm active area. This offers sizable surface for reflective scatter measurements of high-powered UV lasers. Providing stable responsivity even after prolonged exposure to high-powered UV radiation, product comes in windowless package that enables responsivity to 1 nm and is suited for use in new or... Read More

Electronic Components & Devices, Optics & Photonics, Sensors Monitors & Transducers

Photodiode offers 5 mm active area in quadrant configuration.

Nov 25, 2014

Resistant to radiation damage from UV lasers, SXUVPS4 multi-element detector can withstand 4 days of exposure to 10 eV 1016 photons/cm² without degradation in responsivity. Photodiodes, supplied in TO-5 package that facilitates integration into new or existing systems, provide 0.125–0.02 A/W over 10–200 nm wavelength range. Circular detection surface is optimized for precise... Read More

Electronic Components & Devices, Optics & Photonics

High-Speed Photodiode features 5 mm circular active area.

Oct 03, 2014

Suitable for extreme UV detection covering 1–200 nm, Model SXUV20HS1 dissipates optical energy of high-powered UV lasers without typical measurement degradation that occurs with prolonged exposure to UV. Unit features 19.7 mm² sensitive area, 5 micron grid lines, and 100 micron pitch, as well as 5 MΩ shunt resistance and capacitance from 200–800 pF. With reverse breakdown voltage at 160 V... Read More

Electronic Components & Devices, Optics & Photonics

Windowless Photodiode features circular active area.

Aug 21, 2014

Housed in TO-39, 3-pin windowless package that delivers responsivity down to 1 nm, Model SXUV features active area of ∅2.5 mm and minimum shunt resistance of 20 MΩ at ±10 mV. Additional device parameters include reverse breakdown voltage of 20 V, with capacitance of 1 nF and response time of 1–2 ns. Operating from -10 to 40°C ambient, photodiode is suited for high power laser monitoring at... Read More

Electronic Components & Devices, Sensors Monitors & Transducers, Test & Measuring Instruments

Continuous Position Sensor offers stable response despite UV/EUV.

Mar 03, 2014

Available in TO-8 windowless package with 5 x 5 mm active area, ODD-SXUV-DLPSD duo-lateral UV/EUV submicron-position resolution sensor provides stable response after exposure to ultraviolet (UV) and/or extreme ultraviolet (EUV) radiation. Continuous position sensing photodiode, designed for position detection of light from 1–400 nm wavelengths, offers 0.20 A/W typ responsivity at 13 nm (0.02... Read More

Electronic Components & Devices, Optics & Photonics

Single Active Area Photodiode permits detection to 1 nm.

Jan 10, 2014

Offering stable response after exposure to EUV/UV conditions, SXUV100 features 100 mm² active area. Sensitive device is operational from 1–1,000 nm, with peak photon responsivity at 0.27 A/W (at 1 nm) and 0.33 A/W (at 850 nm). Other characteristics include 10 MΩ shunt resistance @ ±10 mV, 6 nF typ capacitance, and 250 nsec typ response time. Optimal applications include detection of 13.5... Read More

Electronic Components & Devices, Optics & Photonics

Quadrant Photodiode offers 5 mm active area in each quadrant.

Nov 22, 2013

Housed in TO-5 windowless package with 5-pin header, Model SXUVPS4C features light responsivity from 1–1,000 nm and shunt resistance of 100 MΩ, making it suitable for 2 axes-positional-centering applications for lasers in 13.5–200 nm wavelength range. Operating and storage temperatures range from -10 to 40°C ambient and from -20 to 80°C in nitrogen or vacuum conditions. Max junction... Read More

Electronic Components & Devices, Optics & Photonics

Radiation-Hard Photodiode is suited for electron detection.

Oct 10, 2013

With circular active area, 20 mm² UVG20C offers 100% internal quantum efficiency. Absence of surface dead region results in 100% collection efficiency. Radiation-hard, junction-passivating, oxynitride protective entrance window makes device stable even after exposure to flux of UV photons; responsivity degradation is <2% after MJ/cm² of 254 nm and tens of kilojoules/cm² of 193 nm photon... Read More

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Opto Diode Corporation