Opto Diode Corporation

Latest AXUV63HS1 Circular Photodiode Features Minimum Reverse Breakdown Voltage of 160 V
Electronic Components & Devices

Latest AXUV63HS1 Circular Photodiode Features Minimum Reverse Breakdown Voltage of 160 V

The Opto Diode’s AXUV63HS1 Circular Photodiode is designed for electron detection applications and has an active area of 9 mm diameter. The unit exhibits a rise time of 10 nsec and a maximum dark current of 100 nA. It is offered with a cover plate that protects photodiode chip and wire bonds and has a lead soldering temperature of 260°C. The AXUV63HS1 can be stored and operated in -10°C to...

Read More »
Opto Diode Introduces AXUV20HS1 Circular Photodetectors That Detect Electrons to 200 eV
Sensors, Monitors & Transducers

Opto Diode Introduces AXUV20HS1 Circular Photodetectors That Detect Electrons to 200 eV

AXUV20HS1 Circular Photodetectors are suitable for high-speed detection of low-energy electrons or X-rays. The units have a rise time of 3.5 nsec and a soldering temperature of 260°C. The detectors can be operated in -10°C to +40°C ambient temperature and come with a circular active area of 5 mm diameter. They are offered with protective cover plate that safeguards photodiode chip and wire...

Read More »
New AXUV20A Circular Photodetectors Feature a Shunt Resistance of 100 MOhm
Sensors, Monitors & Transducers

New AXUV20A Circular Photodetectors Feature a Shunt Resistance of 100 MOhm

The AXUV20A Circular Photodetectors come with an active area of 5.5 mm diameter with a reverse breakdown voltage of 5 V. The units offer a typical capacitance of 4 nF and a maximum capacitance of 10 nF with a rise time of 2 µsec. They can be operated in -10°C to +40°C in ambient environments and are designed for radiation, electron, and photon response in UV, EUV, through visible and...

Read More »
New Photodetectors Offer Improved Stability for Operation in Ultraviolet Environments
Sensors, Monitors & Transducers

New Photodetectors Offer Improved Stability for Operation in Ultraviolet Environments

Opto Diode’s Photodetectors consist of AXUV100TF030 and AXUV100TF400 models with 100 mm² active areas and directly deposited thin-film filters. AXUV100TF030 comes with responsivity of 0.16 A/W at 3 nm with detection range from 1 nm to 12 nm whereas the AXUV100TF400 offers 0.15 A/W at 40 nm responsivity and detection range from 18 nm to 80 nm. Units can be operated and stored in -10°C to...

Read More »
Thin-Film Filter Photodetectors are operated in a temperature range of -10 °C to +40 °C.
Electronic Components & Devices

Thin-Film Filter Photodetectors are operated in a temperature range of -10 °C to +40 °C.

Thin-Film Filter Photodetectors are available in SXUV100TF135 and SXUV100TF135B versions. Units offer 100 mm² active areas and can detect between 12 nm and 18 nm. Products provide typical responsivity of 0.09 A/W at 13.5 nm and are suitable for laser power monitoring, semiconductor photolithography and metrology system applications. Photodetectors are operated in a temperature range of -20 °C...

Read More »
BXT2-17TF Infrared Detector comes in a standard TO37 can.
Sensors, Monitors & Transducers

BXT2-17TF Infrared Detector comes in a standard TO37 can.

BXT2-17TF Infrared Detector is equipped with 4.67 µm optical bandpass silicon filter. Unit is operated in a temperature range of -40 °C to +85 °C and comes with 2 mm² active area. Product is suitable for carbon monoxide gas analysis, environmental monitoring, process control systems, and industrial burner monitoring and control. This thermoelectrically-cooled detector is integrated with a...

Read More »
NXIR-5C Photodiode meets RoHS and REACH standards.
Electronic Components & Devices

NXIR-5C Photodiode meets RoHS and REACH standards.

Offering a sensitivity of 0.62 A/W at 850 nm and 0.35 A/W at 1064 nm, NXIR-5C NIR Photodiode are housed in 4.7 mm x 4.9 mm ceramic carrier surface-mount device package with 5 mm^2 active area. Featuring 320 nm to 1100 nm spectral response, unit has 1nA dark current, 5 pF capacitance at 10 volts, and greater than 100 MΩ shunt resistance. Operated in -40°C to +125°C, photodiode is available on...

Read More »
NXIR-RF100C NIR SMD Photodiodes feature anti-reflective coated window.
Electronic Components & Devices

NXIR-RF100C NIR SMD Photodiodes feature anti-reflective coated window.

Used in laser-monitoring, rain and sun-sensor applications, NXIR-RF100C SMD Photodiodes come in 3mm x 3.5mm rugged package with 1mm2 active area. Operated in -40°C to +125°C temperature range, product features anti-reflective coated window for providing >98% transmission. Delivering 0.62 A/W at 850nm and 0.35 A/W at 1064nm responsivity, product offers 3pF capacitance at 0V, shunt resistance >...

Read More »
OD-685C LED is RoHS compliant.
Electronic Components & Devices

OD-685C LED is RoHS compliant.

Suitable for biological analysis, health, science and veterinary applications, OD-685C LED is operated in -65°C to +125°C temperature. Having 110 mW total power dissipation, unit offers 50 mA continuous forward current and 100 mA peak forward current. Delivering 2.0mW of radiant power at forward current of 20mA, LED provides 685nm peak wavelength. Product is rated to forward voltage of 1.8V...

Read More »
Low-noise EUV photodetector SXUV20C feature 20 mm circular active area.
Electronic Components & Devices

Low-noise EUV photodetector SXUV20C feature 20 mm circular active area.

Designed to have stability for a longer time during exposure to high intensity EUV energy and possessing high responsivity in wavelengths 1nm to 200 nm, Opto Diode’s SXUV20C is a low-noise extreme UV photodetector with 20 mm² circular active area, that can align easily with an EUV laser. Applied in UV laser units and applications that require critical measurements of power and speed,...

Read More »
Latest AXUV63HS1 Circular Photodiode Features Minimum Reverse Breakdown Voltage of 160 V
Electronic Components & Devices

Latest AXUV63HS1 Circular Photodiode Features Minimum Reverse Breakdown Voltage of 160 V

The Opto Diode’s AXUV63HS1 Circular Photodiode is designed for electron detection applications and has an active area of 9 mm diameter. The unit exhibits a rise time of 10 nsec and a maximum dark current of 100 nA. It is offered with a cover plate that protects photodiode chip and wire bonds and has a lead soldering temperature of 260°C. The AXUV63HS1 can be stored and operated in -10°C to...

Read More »
Opto Diode Introduces AXUV20HS1 Circular Photodetectors That Detect Electrons to 200 eV
Sensors, Monitors & Transducers

Opto Diode Introduces AXUV20HS1 Circular Photodetectors That Detect Electrons to 200 eV

AXUV20HS1 Circular Photodetectors are suitable for high-speed detection of low-energy electrons or X-rays. The units have a rise time of 3.5 nsec and a soldering temperature of 260°C. The detectors can be operated in -10°C to +40°C ambient temperature and come with a circular active area of 5 mm diameter. They are offered with protective cover plate that safeguards photodiode chip and wire...

Read More »
New AXUV20A Circular Photodetectors Feature a Shunt Resistance of 100 MOhm
Sensors, Monitors & Transducers

New AXUV20A Circular Photodetectors Feature a Shunt Resistance of 100 MOhm

The AXUV20A Circular Photodetectors come with an active area of 5.5 mm diameter with a reverse breakdown voltage of 5 V. The units offer a typical capacitance of 4 nF and a maximum capacitance of 10 nF with a rise time of 2 µsec. They can be operated in -10°C to +40°C in ambient environments and are designed for radiation, electron, and photon response in UV, EUV, through visible and...

Read More »
New Photodetectors Offer Improved Stability for Operation in Ultraviolet Environments
Sensors, Monitors & Transducers

New Photodetectors Offer Improved Stability for Operation in Ultraviolet Environments

Opto Diode’s Photodetectors consist of AXUV100TF030 and AXUV100TF400 models with 100 mm² active areas and directly deposited thin-film filters. AXUV100TF030 comes with responsivity of 0.16 A/W at 3 nm with detection range from 1 nm to 12 nm whereas the AXUV100TF400 offers 0.15 A/W at 40 nm responsivity and detection range from 18 nm to 80 nm. Units can be operated and stored in -10°C to...

Read More »
Thin-Film Filter Photodetectors are operated in a temperature range of -10 °C to +40 °C.
Electronic Components & Devices

Thin-Film Filter Photodetectors are operated in a temperature range of -10 °C to +40 °C.

Thin-Film Filter Photodetectors are available in SXUV100TF135 and SXUV100TF135B versions. Units offer 100 mm² active areas and can detect between 12 nm and 18 nm. Products provide typical responsivity of 0.09 A/W at 13.5 nm and are suitable for laser power monitoring, semiconductor photolithography and metrology system applications. Photodetectors are operated in a temperature range of -20 °C...

Read More »
BXT2-17TF Infrared Detector comes in a standard TO37 can.
Sensors, Monitors & Transducers

BXT2-17TF Infrared Detector comes in a standard TO37 can.

BXT2-17TF Infrared Detector is equipped with 4.67 µm optical bandpass silicon filter. Unit is operated in a temperature range of -40 °C to +85 °C and comes with 2 mm² active area. Product is suitable for carbon monoxide gas analysis, environmental monitoring, process control systems, and industrial burner monitoring and control. This thermoelectrically-cooled detector is integrated with a...

Read More »
NXIR-5C Photodiode meets RoHS and REACH standards.
Electronic Components & Devices

NXIR-5C Photodiode meets RoHS and REACH standards.

Offering a sensitivity of 0.62 A/W at 850 nm and 0.35 A/W at 1064 nm, NXIR-5C NIR Photodiode are housed in 4.7 mm x 4.9 mm ceramic carrier surface-mount device package with 5 mm^2 active area. Featuring 320 nm to 1100 nm spectral response, unit has 1nA dark current, 5 pF capacitance at 10 volts, and greater than 100 MΩ shunt resistance. Operated in -40°C to +125°C, photodiode is available on...

Read More »
NXIR-RF100C NIR SMD Photodiodes feature anti-reflective coated window.
Electronic Components & Devices

NXIR-RF100C NIR SMD Photodiodes feature anti-reflective coated window.

Used in laser-monitoring, rain and sun-sensor applications, NXIR-RF100C SMD Photodiodes come in 3mm x 3.5mm rugged package with 1mm2 active area. Operated in -40°C to +125°C temperature range, product features anti-reflective coated window for providing >98% transmission. Delivering 0.62 A/W at 850nm and 0.35 A/W at 1064nm responsivity, product offers 3pF capacitance at 0V, shunt resistance >...

Read More »
OD-685C LED is RoHS compliant.
Electronic Components & Devices

OD-685C LED is RoHS compliant.

Suitable for biological analysis, health, science and veterinary applications, OD-685C LED is operated in -65°C to +125°C temperature. Having 110 mW total power dissipation, unit offers 50 mA continuous forward current and 100 mA peak forward current. Delivering 2.0mW of radiant power at forward current of 20mA, LED provides 685nm peak wavelength. Product is rated to forward voltage of 1.8V...

Read More »
Low-noise EUV photodetector SXUV20C feature 20 mm circular active area.
Electronic Components & Devices

Low-noise EUV photodetector SXUV20C feature 20 mm circular active area.

Designed to have stability for a longer time during exposure to high intensity EUV energy and possessing high responsivity in wavelengths 1nm to 200 nm, Opto Diode’s SXUV20C is a low-noise extreme UV photodetector with 20 mm² circular active area, that can align easily with an EUV laser. Applied in UV laser units and applications that require critical measurements of power and speed,...

Read More »

All Topics