nLight Photonics

nLight Introduces New Line of Photodarkening Resistant Fibers
Textile Industry Products

nLight Introduces New Line of Photodarkening Resistant Fibers

Vancouver, WA USA March 16, 2009 - nLIGHT Corporation (nLIGHT) announced today the availability of new highly doped, photodarkening resistant ytterbium fibers with up to 60 percent (%) higher absorption at 920 nanometer (nm) and pump conversion efficiencies routinely over 75 %. In 2005 the fiber division of nLIGHT, previously LIEKKI Corporation, was the first active fiber manufacturer to publish...

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Diode Lasers suit low-power materials processing.
Electronic Components & Devices

Diode Lasers suit low-power materials processing.

Featuring nXLT(TM) single emitter diodes, Pearl(TM) Fiber-Coupled Diode Lasers are available in 915, 940, and 980 nm wavelengths with up to 100 W power from 200-800 Â-µm PowerCore(TM) fiber, which provides consistent beam quality and power transmission independent of fiber layout and movement. Units are specifically designed for industrial applications such as plastic welding and soldering.

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Electronic Components & Devices

Solid-State Laser Platform covers 879-888 nm wavelengths.

Utilizing Pearl(TM) with upper-state pumping of Nd:YAG or Nd:YVO4 allows design and manufacture of air-cooled diode-pumped solid-state laser systems. Along with electrical-optical efficiency greater than 50%, platform offers single emitter architecture that enables spectral widths of less than 3.5 nm full width at half maximum (FWHM) to be maintained. Power levels up to 100 W are available at...

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LMA All-Erbium Fibers suit 1.5 µm applications.
Chemicals & Gases

LMA All-Erbium Fibers suit 1.5 µm applications.

Manufactured using direct nanoparticle deposition active fiber production technology, LIEKKI(TM) large mode area all-erbium fibers are suited for high-power, eye-safe applications at 1.5+ Â-µm. Characteristics include core absorptions of 60-120 dB/m @ 1,530 nm, numerical apertures of less than 0.10, cores of 20-70 µm, and claddings from 125-400 µm. Specific areas of use...

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Electronic Components & Devices

InP Laser Diodes are suited for medical applications.

At 1.9 microns, Pearl(TM) fiber-coupled module provides up to 20 W output from one 400 micron 0.22NA fiber with greater than 10% wall-plug efficiency. Single emitter chips produce up to 1.5 W on expansion matched substrates. At 1.4 and 1.5 microns, Pearl module provides up to 40 W from one 400 micron 0.22NA fiber and greater than 30% wall-plug efficiency. Single emitter chips produce up to 3.5 W...

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Software simulates large mode area and highly doped fibers.
Software

Software simulates large mode area and highly doped fibers.

Based on precise algorithms that account for all reflections in system crucial for accurate laser and ASE light source simulations, LIEKKI(TM) Application Designer v4.0 suits high power applications providing platform for simulating/optimizing fiber amplifiers and lasers. It features multimode analysis of bent fibers, variable step size in transient analysis for simulation of low repetition rate...

Read More »
Electronic Components & Devices

High-Power and High-Brightness Diode Lasers to be Highlighted at LASYS 2008

Advancements in Diode Lasers for Direct Materials Processing, Fiber Pumping and DPSS Lasers will be Featured Vancouver, WA USA February 28, 2008 - Advancement in the performance and cost-effectiveness of high-power diode lasers are enabling a transformation in materials processing solutions. Diode-based laser systems are accelerating the rate at which they are displacing gas-based laser systems...

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Diode Lasers come in C-mount package.
Electronic Components & Devices

Diode Lasers come in C-mount package.

Single-emitter, multimode diode lasers are available in operating wavelengths from 635-1,600 nm and output powers from 0.5-5 W, continuous wave. Lasers produce 25-30 mW per micron power density. Five watt device is a 200 micron broad area emitter at 808 nm, with operating current of 5,000 mA and compliance voltage of 1.95 V. Unit with 0.5 W output is a 150 micron broad area emitter at 635 nm. It...

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Diode Laser delivers up to 30 W.
Electronic Components & Devices

Diode Laser delivers up to 30 W.

Fiber Bundled Array(TM) Diode Laser delivers high-power light via 1 m long, armor-jacketed, 800 micron diameter fiber bundle. Unit produces 30 W at wavelengths between 780-980 nm, and up to 10 W at wavelengths between 1,435-1,570 nm. It has typical numerical aperture specification of 0.12 and spectral width of less than 3 nm FWHM. Equipped with 10,000 ohm at 25°C thermistor, laser is housed...

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Laser Stack Arrays range from 790-980 and 1,435-1,570 nm.
Electronic Components & Devices

Laser Stack Arrays range from 790-980 and 1,435-1,570 nm.

Based on MOCVD-grown laser structure, micro-channel, water-cooled Cascade bars provide 50, 60, 80, or 100 W of CW power from 790-980 nm and 20 W of CW power from 1,435-1,570 nm. Stacks can include fast axis and slow axis collimation optics and can be configured horizontally or vertically, with max of 20 bars high or 6 bars across. Diode laser stack arrays are suited for direct-diode materials...

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nLight Introduces New Line of Photodarkening Resistant Fibers
Textile Industry Products

nLight Introduces New Line of Photodarkening Resistant Fibers

Vancouver, WA USA March 16, 2009 - nLIGHT Corporation (nLIGHT) announced today the availability of new highly doped, photodarkening resistant ytterbium fibers with up to 60 percent (%) higher absorption at 920 nanometer (nm) and pump conversion efficiencies routinely over 75 %. In 2005 the fiber division of nLIGHT, previously LIEKKI Corporation, was the first active fiber manufacturer to publish...

Read More »
Diode Lasers suit low-power materials processing.
Electronic Components & Devices

Diode Lasers suit low-power materials processing.

Featuring nXLT(TM) single emitter diodes, Pearl(TM) Fiber-Coupled Diode Lasers are available in 915, 940, and 980 nm wavelengths with up to 100 W power from 200-800 Â-µm PowerCore(TM) fiber, which provides consistent beam quality and power transmission independent of fiber layout and movement. Units are specifically designed for industrial applications such as plastic welding and soldering.

Read More »
Electronic Components & Devices

Solid-State Laser Platform covers 879-888 nm wavelengths.

Utilizing Pearl(TM) with upper-state pumping of Nd:YAG or Nd:YVO4 allows design and manufacture of air-cooled diode-pumped solid-state laser systems. Along with electrical-optical efficiency greater than 50%, platform offers single emitter architecture that enables spectral widths of less than 3.5 nm full width at half maximum (FWHM) to be maintained. Power levels up to 100 W are available at...

Read More »
LMA All-Erbium Fibers suit 1.5 µm applications.
Chemicals & Gases

LMA All-Erbium Fibers suit 1.5 µm applications.

Manufactured using direct nanoparticle deposition active fiber production technology, LIEKKI(TM) large mode area all-erbium fibers are suited for high-power, eye-safe applications at 1.5+ Â-µm. Characteristics include core absorptions of 60-120 dB/m @ 1,530 nm, numerical apertures of less than 0.10, cores of 20-70 µm, and claddings from 125-400 µm. Specific areas of use...

Read More »
Electronic Components & Devices

InP Laser Diodes are suited for medical applications.

At 1.9 microns, Pearl(TM) fiber-coupled module provides up to 20 W output from one 400 micron 0.22NA fiber with greater than 10% wall-plug efficiency. Single emitter chips produce up to 1.5 W on expansion matched substrates. At 1.4 and 1.5 microns, Pearl module provides up to 40 W from one 400 micron 0.22NA fiber and greater than 30% wall-plug efficiency. Single emitter chips produce up to 3.5 W...

Read More »
Software simulates large mode area and highly doped fibers.
Software

Software simulates large mode area and highly doped fibers.

Based on precise algorithms that account for all reflections in system crucial for accurate laser and ASE light source simulations, LIEKKI(TM) Application Designer v4.0 suits high power applications providing platform for simulating/optimizing fiber amplifiers and lasers. It features multimode analysis of bent fibers, variable step size in transient analysis for simulation of low repetition rate...

Read More »
Electronic Components & Devices

High-Power and High-Brightness Diode Lasers to be Highlighted at LASYS 2008

Advancements in Diode Lasers for Direct Materials Processing, Fiber Pumping and DPSS Lasers will be Featured Vancouver, WA USA February 28, 2008 - Advancement in the performance and cost-effectiveness of high-power diode lasers are enabling a transformation in materials processing solutions. Diode-based laser systems are accelerating the rate at which they are displacing gas-based laser systems...

Read More »
Mergers & Acquisitions

nLIGHT Acquires LIEKKI

Fastest growing semiconductor laser company will expand product offering with leading fiber products from LIEKKI VANCOUVER, Wash., and LOHJA, Finland, October 8, 2007 - nLIGHT Corporation, a leading manufacturer of high-power semiconductor lasers, today announced the signing of a definitive agreement to acquire leading specialty fiber manufacturer LIEKKI Corporation based in Lohja, Finland....

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Diode Lasers come in C-mount package.
Electronic Components & Devices

Diode Lasers come in C-mount package.

Single-emitter, multimode diode lasers are available in operating wavelengths from 635-1,600 nm and output powers from 0.5-5 W, continuous wave. Lasers produce 25-30 mW per micron power density. Five watt device is a 200 micron broad area emitter at 808 nm, with operating current of 5,000 mA and compliance voltage of 1.95 V. Unit with 0.5 W output is a 150 micron broad area emitter at 635 nm. It...

Read More »
Diode Laser delivers up to 30 W.
Electronic Components & Devices

Diode Laser delivers up to 30 W.

Fiber Bundled Array(TM) Diode Laser delivers high-power light via 1 m long, armor-jacketed, 800 micron diameter fiber bundle. Unit produces 30 W at wavelengths between 780-980 nm, and up to 10 W at wavelengths between 1,435-1,570 nm. It has typical numerical aperture specification of 0.12 and spectral width of less than 3 nm FWHM. Equipped with 10,000 ohm at 25°C thermistor, laser is housed...

Read More »

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