nLight Photonics

nLight Introduces New Line of Photodarkening Resistant Fibers
Materials

nLight Introduces New Line of Photodarkening Resistant Fibers

Vancouver, WA USA March 16, 2009 - nLIGHT Corporation (nLIGHT) announced today the availability of new highly doped, photodarkening resistant ytterbium fibers with up to 60 percent (%) higher absorption at 920 nanometer (nm) and pump conversion efficiencies routinely over 75 %. In 2005 the fiber division of nLIGHT, previously LIEKKI Corporation, was the first active fiber manufacturer to publish...

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Diode Lasers suit low-power materials processing.
Electronic Components & Devices

Diode Lasers suit low-power materials processing.

Featuring nXLT(TM) single emitter diodes, Pearl(TM) Fiber-Coupled Diode Lasers are available in 915, 940, and 980 nm wavelengths with up to 100 W power from 200-800 Â-µm PowerCore(TM) fiber, which provides consistent beam quality and power transmission independent of fiber layout and movement. Units are specifically designed for industrial applications such as plastic welding and soldering.

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Electronic Components & Devices

Solid-State Laser Platform covers 879-888 nm wavelengths.

Utilizing Pearl(TM) with upper-state pumping of Nd:YAG or Nd:YVO4 allows design and manufacture of air-cooled diode-pumped solid-state laser systems. Along with electrical-optical efficiency greater than 50%, platform offers single emitter architecture that enables spectral widths of less than 3.5 nm full width at half maximum (FWHM) to be maintained. Power levels up to 100 W are available at...

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Diode Lasers come in C-mount package.
Electronic Components & Devices

Diode Lasers come in C-mount package.

Single-emitter, multimode diode lasers are available in operating wavelengths from 635-1,600 nm and output powers from 0.5-5 W, continuous wave. Lasers produce 25-30 mW per micron power density. Five watt device is a 200 micron broad area emitter at 808 nm, with operating current of 5,000 mA and compliance voltage of 1.95 V. Unit with 0.5 W output is a 150 micron broad area emitter at 635 nm. It...

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Diode Laser delivers up to 30 W.
Electronic Components & Devices

Diode Laser delivers up to 30 W.

Fiber Bundled Array(TM) Diode Laser delivers high-power light via 1 m long, armor-jacketed, 800 micron diameter fiber bundle. Unit produces 30 W at wavelengths between 780-980 nm, and up to 10 W at wavelengths between 1,435-1,570 nm. It has typical numerical aperture specification of 0.12 and spectral width of less than 3 nm FWHM. Equipped with 10,000 ohm at 25Â-

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Laser Stack Arrays range from 790-980 and 1,435-1,570 nm.
Electronic Components & Devices

Laser Stack Arrays range from 790-980 and 1,435-1,570 nm.

Based on MOCVD-grown laser structure, micro-channel, water-cooled Cascade bars provide 50, 60, 80, or 100 W of CW power from 790-980 nm and 20 W of CW power from 1,435-1,570 nm. Stacks can include fast axis and slow axis collimation optics and can be configured horizontally or vertically, with max of 20 bars high or 6 bars across. Diode laser stack arrays are suited for direct-diode materials...

Read More »
nLight Introduces New Line of Photodarkening Resistant Fibers
Materials

nLight Introduces New Line of Photodarkening Resistant Fibers

Vancouver, WA USA March 16, 2009 - nLIGHT Corporation (nLIGHT) announced today the availability of new highly doped, photodarkening resistant ytterbium fibers with up to 60 percent (%) higher absorption at 920 nanometer (nm) and pump conversion efficiencies routinely over 75 %. In 2005 the fiber division of nLIGHT, previously LIEKKI Corporation, was the first active fiber manufacturer to publish...

Read More »
Diode Lasers suit low-power materials processing.
Electronic Components & Devices

Diode Lasers suit low-power materials processing.

Featuring nXLT(TM) single emitter diodes, Pearl(TM) Fiber-Coupled Diode Lasers are available in 915, 940, and 980 nm wavelengths with up to 100 W power from 200-800 Â-µm PowerCore(TM) fiber, which provides consistent beam quality and power transmission independent of fiber layout and movement. Units are specifically designed for industrial applications such as plastic welding and soldering.

Read More »
Electronic Components & Devices

Solid-State Laser Platform covers 879-888 nm wavelengths.

Utilizing Pearl(TM) with upper-state pumping of Nd:YAG or Nd:YVO4 allows design and manufacture of air-cooled diode-pumped solid-state laser systems. Along with electrical-optical efficiency greater than 50%, platform offers single emitter architecture that enables spectral widths of less than 3.5 nm full width at half maximum (FWHM) to be maintained. Power levels up to 100 W are available at...

Read More »
Mergers & Acquisitions

nLIGHT Acquires LIEKKI

Fastest growing semiconductor laser company will expand product offering with leading fiber products from LIEKKI VANCOUVER, Wash., and LOHJA, Finland, October 8, 2007 - nLIGHT Corporation, a leading manufacturer of high-power semiconductor lasers, today announced the signing of a definitive agreement to acquire leading specialty fiber manufacturer LIEKKI Corporation based in Lohja, Finland....

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Diode Lasers come in C-mount package.
Electronic Components & Devices

Diode Lasers come in C-mount package.

Single-emitter, multimode diode lasers are available in operating wavelengths from 635-1,600 nm and output powers from 0.5-5 W, continuous wave. Lasers produce 25-30 mW per micron power density. Five watt device is a 200 micron broad area emitter at 808 nm, with operating current of 5,000 mA and compliance voltage of 1.95 V. Unit with 0.5 W output is a 150 micron broad area emitter at 635 nm. It...

Read More »
Diode Laser delivers up to 30 W.
Electronic Components & Devices

Diode Laser delivers up to 30 W.

Fiber Bundled Array(TM) Diode Laser delivers high-power light via 1 m long, armor-jacketed, 800 micron diameter fiber bundle. Unit produces 30 W at wavelengths between 780-980 nm, and up to 10 W at wavelengths between 1,435-1,570 nm. It has typical numerical aperture specification of 0.12 and spectral width of less than 3 nm FWHM. Equipped with 10,000 ohm at 25Â-

Read More »
Laser Stack Arrays range from 790-980 and 1,435-1,570 nm.
Electronic Components & Devices

Laser Stack Arrays range from 790-980 and 1,435-1,570 nm.

Based on MOCVD-grown laser structure, micro-channel, water-cooled Cascade bars provide 50, 60, 80, or 100 W of CW power from 790-980 nm and 20 W of CW power from 1,435-1,570 nm. Stacks can include fast axis and slow axis collimation optics and can be configured horizontally or vertically, with max of 20 bars high or 6 bars across. Diode laser stack arrays are suited for direct-diode materials...

Read More »

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