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Vishay

63 Lancaster Ave., Malvern, PA, 19355, US

  • 610-644-1300
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Latest New Product News from
Vishay

Optics & Photonics, Electronic Components & Devices

Automotive-Grade PIN Photodiodes have 7.5 mm² sensitive area.

December 19, 2014

High-speed silicon PIN photodiodes VEMD5010X01 and VEMD5110X01 come in top-view, SMT packages measuring 5 x 4 x 0.9 mm. For detection of visible and NIR radiation, VEMD5010X01's free cavity is filled with clear epoxy for 430–1,100 nm sensitivity range. For 790–1,050 nm IR applications, VEMD5110X01 utilizes black daylight filtering epoxy and is matched with 850–940 nm IR emitters. Both are AEC-Q101-qualified devices with reverse light current of 48 µA and dark current of 2 nA. Read More

Electronic Components & Devices

Compact 7 W SMT Resistor offers resistance down to 1 milliohm.

December 18, 2014

Offered in 2818 case size that conserves space in automotive, industrial, computer, and consumer applications, Vishay Dale WSHM2818 SMT Power Metal Strip® resistor features solid metal nickel-chrome or manganese-copper alloy resistive element with TCR < 20 ppm/°C. AEC-Q200-qualified product has 1,000-hour load life stability, resistance to short time overload of <±1%, and all-welded construction. Resistance values range from 1–100 mΩ with tight tolerance of ±1.0%. Read More

Electronic Components & Devices

High-Current Inductor features integrated e-shield.

December 18, 2014

Saving board space by eliminating need for separate board-level shielding, Model IHLE-4040DC-5A contains electric field associated with EMI in tin-plated copper integrated shield, providing up to -20 dB of electric field reduction at 1 cm when shield is connected to ground. RoHS-compliant device features max DCR from 1.66–178 mΩ and inductance values from 0.47–47 µH. Housed in 4040 case size, AEC-Q200-qualified inductor is rated to 30 A and operates up to +155°C. Read More

Electronic Components & Devices

Power Stages target multiphase POL regulators.

December 12, 2014

Offered in 3 PowerPAK® package sizes with input voltage range of 4.5–18 V, VRPower® Integrated DrMOS Power Stages are optimized for on-board DC/DC converters in computing and storage equipment, telecom switches, routers, and graphics cards. Gate driver IC is compatible with range of PWM controllers and supports tri-state PWM logic of 5 V and 3.3 V. Diode emulation mode circuitry optimizes light-load efficiency, while adaptive dead time control further optimizes efficiency at all load points. Read More

Electronic Components & Devices

SMT Polymer Tantalum Chip Capacitors offer low ESR in low profile.

December 11, 2014

Supplied in J, P, A, B, and T case sizes, Polytech T55 series offers capacitance from 3.3–330 µF over 2.5–10 V range and capacitance tolerance of ±20% for computer, telecom, and industrial applications. These RoHS-compliant and halogen-free, molded chip capacitors, with ESR down to 30 mΩ at +25°C and 100 kHz, employ polymer cathodes and offer ripple current rating up to 1.78 A IRMS. Operation range is -55 to +105°C (voltage derating above +85°C), and terminations are lead (Pb) free. Read More

Electronic Components & Devices

Trench PT/FS IGBT Platform reduces conduction, switching losses.

December 11, 2014

Supplied as bare die, Trench IGBT platform includes Punch Through (PT) and Field Stop (FS) technologies and increases efficiency in motor drives, UPSs, solar inverters, and welding machine inverters. Collector-to-emitter voltages, as well as fast and soft turn-on and turn-off, allow low conduction and switching losses while providing breakdown voltages to 650 V for increased reliability. Collector current ratings range from 30–240 A, and available breakdown voltages are 600 and 650 V. Read More

Electronic Components & Devices

N-Channel MOSFETs suit soft switching topologies.

December 8, 2014

Built on Super Junction Technology, 600 V Models SiHx28N60EF and SiHx33N60EF are suited for zero voltage switching/soft switching topologies such as phase-shift bridges and LLC converter half bridges. Minimized reverse recovery charge allows devices to regain ability to block full breakdown voltage quickly, helping to avoid failure from shoot-through and thermal overstress. Offered in 4 packages, 28 A SiHx28N60EF and 33 A SiHx33N60EF feature low on-resistance of 123 Ω and 98 Ω, respectively. Read More

Electronic Components & Devices

Energy Storage Capacitors feature energy density of 13 Ws/g.

December 3, 2014

With 2.5 mm profile and capacitance values from 4–90 F, 196 HVC ENYCAP™ Series is suitable for energy harvesting and power line backup applications. Units feature voltage ratings from 1.4–8.4 V, soft charging characteristics of less than 1 A, and low leakage current of 0.03–0.24 mA after 24 hr. Available with stacked through-hole, surface-mount flat, and lay flat configurations, capacitors offer useful life of 1,000 hr at +85°C and do not require cell balancing. Read More

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