Photodiodes

IR Emitters and Photodiode are suited for IR touch panels.
Photodiodes

IR Emitters and Photodiode are suited for IR touch panels.

IR emitters VSMG10850 (850 nm) and VSMB10940 (940 nm) and package-matched, high-speed silicon PIN photodiode VEMD10940F, withÂ- radiant sensitivity from 780–1,050 nm, offer ±75° angle of half intensity in 3 x 2 x 1 mm side-view SMT package. Offered in clear, untinted plastic packages, IR emitters provide radiant intensity of 1 mW/sr typ @ 20 mA and switching times of 15...

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PIEPS Chooses Energy Micro Gecko MCU for Use in Market's First GPS Avalanche Monitor
Photodiodes

PIEPS Chooses Energy Micro Gecko MCU for Use in Market's First GPS Avalanche Monitor

Oslo, Norway- Energy Micro, the energy friendly microcontroller and radio company, today confirmed that its EFM32 Gecko Cortex-M3 MCUs have been chosen by PIEPS GmbH for use in its top-of-the-range handheld avalanche transceiver, the PIEPS VECTOR. Frequent back-country travelers and professional mountain guides rely on avalanche transceivers in the event of an emergency. In normal operation...

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Wand Photodiode Sensors include built-in temperature sensing.
Photodiodes

Wand Photodiode Sensors include built-in temperature sensing.

Packaged inÂ- metal housing with integrated calibration-data storage and automatic OD3 attenuator On/Off position sensor, Series 918D-ST is available with 10 x 10 mm silicon, UV-enhanced silicon, or germanium photodetector. Models 918D-ST-IR,  918D-ST-SL, and 918D-ST-UV operate from 780–1,800 nm, 400–1,100 nm, and 200–1,100 nm, respectively. Supplied with...

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Photodiodes

Photodiodes feature angle-independent response spectrum.

Able to detect predefined wavelength range without additional filter, photodiodes provide spectral receiving characteristics independent of angle of incidence of radiation. Wavelength-selective radiation detection diodes, made from materials such as GaP, AlGaN, AlGaAs, InGaAs, or SiC, are designed for spectral range of 150–1,750 nm and come in hermetically sealed housings. Thermally stable up...

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Silicon Avalanche Photodiodes operate in 800 nm region.
Photodiodes

Silicon Avalanche Photodiodes operate in 800 nm region.

Comprised of silicon avalanche photodiodes optimized for operation in 800 nm wavelength region, APD Series 8-150 operates from -40 to +100°C max, supports bandwidths up to 1 GHz, and features 0.2, 0.5, 1.0, and 1.5 mm dia active areas. Hermetically sealed metal package is standard, and low temperature coefficientsÂ- reach down to 0.45/V°C. Products are suited for optical...

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SMT Photodiode can integrate into new/existing systems.
Photodiodes

SMT Photodiode can integrate into new/existing systems.

Suited for use in medical diagnostic applications, ODD-900-002 operates in spectral bandwidth from 400-1,100 nm with peak sensitivity of 940 nm. Typical responsivity is at 0.44 A/W, with typical reverse dark current at 5 nA and total capacitance at 25 pF typ. Operating from -25 to +85°C, photodiode can be stored at temperatures from -40 to +85°C and has soldering temperature of...

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Surface Mount Photodiode includes daylight filter.
Photodiodes

Surface Mount Photodiode includes daylight filter.

Featuring sensitivity from 730-1,100 nm with peak sensitivity at 940 nm, Model ODD-900-001 is suited for industrial photoelectric control applications. Electro-optical characteristics at 25°C include typical responsivity of 0.44 A/W, typical reverse dark current at 5 nA, total capacitance at 25 pF, and typical rise/fall times of 50/50 nSecs. Power dissipation is 150 mW or below at...

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High-Speed PIN Photodiodes come in T1 packages with 3 mm lens.
Photodiodes

High-Speed PIN Photodiodes come in T1 packages with 3 mm lens.

For IR and visible light sources, TEFD4300 is clear epoxy device with sensitivity range of 350-1,120 nm. For light sources in IR wavelength from 770-1,070 nm, TEFD4300F is black epoxy device with daylight blocking filter matched with 850-950 nm IR emitters. Both silicon PIN photodiodes offer 17 Â-µA reverse photo current and ±20° angle of half sensitivity. Other features include...

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UV/EUV Photodiodes suit high particle flux environments.
Photodiodes

UV/EUV Photodiodes suit high particle flux environments.

Featuring 100 mmÂ-² active area, IRD SXUV 100 Series has nitrided metal silicide front window that permits operation without loss of performance in high humidity and other environmental conditions that normally require sealed packages. Diodes with single active areas are available from 1-576 mm², and quadrant diodes with several central openings may also be specified. When tested,...

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Photodiodes

Discovery Semiconductors HLPD® Technology Enables Lowest Phase Noise Optoelectronic Clocks

Ewing, NJ - Discovery's Highly Linear Photodiode (HLPD®) technology leads the industry with record phase linearity of less than 5 rad/W. Further reduction in nonlinear distortions can be achieved through optimization of the photodiode's bias, as allowed by the HLPD® Lab Buddy instrument. Such linearity can be leveraged to minimize the phase noise and timing jitter in optoelectronic...

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