Photodiodes

Avalanche Photodiode operates at 3.5 GHz.
Photodiodes

Avalanche Photodiode operates at 3.5 GHz.

Featuring 30 Â-µm InGaAs mesa structure, LAPD 1550-30R offers broad voltage breakdown curve of 30–40 V with typical response of 37 V. Low-noise unit operates from -40 to 85° C and from 1,260–1,650 nm with typical operational wavelength at 1,550 nm. Housed in hermetically sealed, 3-pin, TO46 package with lens cap, RoHS-compliant photodiode is suited for applications in...

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IR Emitter/Photodiode Pairs suit IR touch panels.
Photodiodes

IR Emitter/Photodiode Pairs suit IR touch panels.

Supplied in 3 x 2 mm side-view surface-mount packages, AEC-Q101-qualified VSMB10940X01/VEMD10940FX01 have 1 mm profile, while VSMB11940X01/VEMD11940FX01 offer 0.6 mm profile. VSMB emitters, featuring GaAIAs multi quantum well technology, provide radiant intensity of 1 mW/sr at 20 mA, forward voltage of 1.3 at 20 mA, and switching time of 15 ns. VEMD silicon PIN photodiodes offer reverse light...

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Single Active Area Photodiode permits detection to 1 nm.
Photodiodes

Single Active Area Photodiode permits detection to 1 nm.

Offering stable response after exposure to EUV/UV conditions, SXUV100 features 100 mmÂ-² active area. Sensitive device is operational from 1–1,000 nm, with peak photon responsivity at 0.27 A/W (at 1 nm) and 0.33 A/W (at 850 nm). Other characteristics include 10 MΩ shunt resistance @ ±10 mV, 6 nF typ capacitance, and 250 nsec typ response time. Optimal applications...

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Quadrant Photodiode offers 5 mm² active area in each quadrant.
Photodiodes

Quadrant Photodiode offers 5 mm² active area in each quadrant.

Housed in TO-5 windowless package with 5-pin header, Model SXUVPS4C features light responsivity from 1–1,000 nm and shunt resistance of 100 MΩ, making it suitable for 2 axes-positional-centering applications for lasers in 13.5–200 nm wavelength range. Operating and storage temperatures range from -10 to 40°C ambient and from -20 to 80°C in nitrogen or vacuum conditions. Max...

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Radiation-Hard Photodiode is suited for electron detection.
Photodiodes

Radiation-Hard Photodiode is suited for electron detection.

WithÂ- circular active area, 20 mm² UVG20C offers 100% internal quantum efficiency. Absence of surface dead region results in 100% collection efficiency. Radiation-hard, junction-passivating, oxynitride protective entrance window makes device stable even after exposure to flux of UV photons; responsivity degradation is

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Photodiodes

Absolute Photodiode features 100 mm² active area.

Delivering 100% internal quantum efficiency, Model UVG100 is suited for applications that require extreme stability for detection of vacuum UV and extreme UV photons. Oxynitride front window ensures successful operation without performance degradation that occurs with high humidity. Under test conditions at 254 nm, responsivity is 0.08 min, 0.09 typ, and 0.13 max A/W. Additional specifications...

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High-Speed Photo Detectors offer ±35° angle of half sensitivity.
Photodiodes

High-Speed Photo Detectors offer ±35° angle of half sensitivity.

Offered with or without daylight blocking filters, AEC-Q101-qualified photo detectors are RoHS-compliant andÂ- halogen-free and come in miniature gullwing, reverse gullwing, and side-view packages with wide-view dome lenses. While VEMD2xx3(SL) PIN photodiodes have typ output current of 10 µA and dark current of 1 nA, VEMT2xx3(SL) phototransistors have typ output of...

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Photodiodes

Multi-Element Photodiode suits electron detection, bolometry.

Supplied in 22-pin, dual in-line package with 100% internal quantum efficiency, 20-element AXUV20ELG is suited for measurement of minute amounts of radiant energy.Â- It can also be used for electron detection, providing EUV-UV and UV-VIS-NIR photon responsivity measured in amperes per watt. Along with 0.75 x 4.1 mm active area and 3 mm² sensitive area per element,...

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Photodiodes

Communication Photocouplers operate from 1 mA input current.

Model TLP2301 photocouplers support 20 kbps transmission rate, guarantee maximum delay time of 30 Â-µs, and operate at input current of 1 mA with IR luminescence LED. Supporting 100 kbps transmission rate, TLP2303 models include light-receiving chip with high-speed photo Darlington transistor, allowing for current transfer ratio of up to 800% at 1.6 mA input current. Units convert RS-232...

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Sixteen-Element Photodiode suits UV/EUV or electron detection.
Photodiodes

Sixteen-Element Photodiode suits UV/EUV or electron detection.

Supplied in 40-pin dual in-line package, AXUV16ELG has 2 x 5 mm active area, sensitive area of 10 mmÂ-² per element, and internal quantum efficiency (QE) rated at 100%. This 16-element photodiode, offering stable response after exposure to high energy electrons or photons, features reverse breakdown voltage at 25 V typ, capacitance of 40 pF, and rise time of 500 nsec. Storage and...

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Paratherm™ HR Heat Transfer Fluid: Higher Temperature Stability Leads to Longer Fluid Life
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Paratherm™ HR Heat Transfer Fluid: Higher Temperature Stability Leads to Longer Fluid Life

For the ultimate in heat transfer fluid performance, Paratherm offers HR Heat Transfer Fluid that is engineered specifically for closed loop liquid phase heating. When it comes to characteristics such as thermal stability and fluid degradation, Paratherm HR leads the industry in value and performance. See our video to learn how Paratherm is raising the bar for heat transfer fluids.

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