Electromagnetic Field (EMF) Sensors / Detectors / Transducer

New UVG5S Ultraviolet-Enhanced Photodetector Comes with 5 mm2 Circular Active Area
Electromagnetic Field (EMF) Sensors / Detectors / Transducer

New UVG5S Ultraviolet-Enhanced Photodetector Comes with 5 mm2 Circular Active Area

Electro-optical characteristics include responsivity at 0.09 A/W (minimum) to 0.115 A/W (typical) and dark current of 1nA. Ideal for detection between 225 nm and 400 nm and features less than 2% response degradation after exposure to 7000J/cm2 at 254 nm. Storage temperature ranges from -20 °C to +80 °C and has 240 °C of lead soldering temperature.

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New SXUV5 Extreme Ultraviolet Photodetector Comes with Circular Active Area of 2.5 mm. Diameter
Electromagnetic Field (EMF) Sensors / Detectors / Transducer

New SXUV5 Extreme Ultraviolet Photodetector Comes with Circular Active Area of 2.5 mm. Diameter

Offers responsivity in 1 nm to 190 nm wavelength region and is designed to be highly stable over long periods of time when exposed to high-intensity EUV energy. Features shunt resistance of 20 MOhms (minimum) and reverse breakdown voltage of 5 Volts (minimum) to 20 Volts (typical). Storage and operating temperatures range from -10 °C to +40 °C (ambient) and from -20 °C to +80 °C in nitrogen...

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New Doppler Radar Sensor Available with Wide Speed-detection Range
Electromagnetic Field (EMF) Sensors / Detectors / Transducer

New Doppler Radar Sensor Available with Wide Speed-detection Range

FWM7RAZ01 supports IF output signals from 1Hz to 1 MHz enabling it to wirelessly detect movement speeds from 6mm-per-second to 6km-per- second within a 30-meter range. Consists of a 24GHz transceiver, TX and RX array antennas, IF amplifier, MCU, DAC, E2PROM and an LDO voltage regulator. Pin header terminals positioned on the back of the module simplify integration, even for designers who aren’t...

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New Broadband Hybrid Silicon-InGaAs Photodetectors are REACH and RoHS Compliant
Electromagnetic Field (EMF) Sensors / Detectors / Transducer

New Broadband Hybrid Silicon-InGaAs Photodetectors are REACH and RoHS Compliant

Ensure versatile, accurate, reliable broadband detection over spectral ranges from UV-to-VIS-to-SWIR, with 250 nm (UV) to 1750 nm (SWIR) enhanced sensitivity. Offer dynamic range includes 365 nm blue-green enhanced Silicon-based and 1300 nm InGaAs-based detection. Available in two Models: MT03-041 (TO-5) and MT03-047 (SMD) that include UV-to-IR-to-SWIR range emitters.

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Opto Diode Introduces AXUV20HS1 Circular Photodetectors That Detect Electrons to 200 eV
Electromagnetic Field (EMF) Sensors / Detectors / Transducer

Opto Diode Introduces AXUV20HS1 Circular Photodetectors That Detect Electrons to 200 eV

AXUV20HS1 Circular Photodetectors are suitable for high-speed detection of low-energy electrons or X-rays. The units have a rise time of 3.5 nsec and a soldering temperature of 260°C. The detectors can be operated in -10°C to +40°C ambient temperature and come with a circular active area of 5 mm diameter. They are offered with protective cover plate that safeguards photodiode chip and wire...

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