Digital Memory

Memory Cards feature 4 GB capacity.

Conforming to SD Memory Card v2 standard, 4 GB SDHC Memory Cards exceed Class 4 minimum write speed of 4 MB/s. Cards operate on 2.7-3.6 V power supply, are 24 x 32 x 2.1 mm, weigh approximately 2 g, and adopt CPRM advanced copyright protection function. Using FAT32 file format, cards are intended for use in digital video cameras, digital cameras capable of recording video segments and...

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Memory Card targets cellular phones with music and camera.

Available in 256 MB, 512 MB, and 1 GB capacities, microSD Card is intended for use in handsets equipped with microSD slots to enable transfer and storage of music and digital photos. It can also be used with adapter in standard SD memory card slots. Featuring external size of 11 x 15 mm, card includes cryptographic security, protection of copyrighted data, and high data transfer rate for fast...

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Fujitsu and Tokyo Institute of Technology Announce the Development of New Material for 256Mbit FeRAM Using 65-Nanometer Technology

FeRAMs to Provide Very Low Power, High Speeds for New Mobile Electronic Products SUNNYVALE, Calif., Aug. 2 // -- Fujitsu Microelectronics America, Inc. (FMA) announced that the Tokyo Institute of Technology (Tokyo- Tech), Fujitsu Laboratories Ltd., and Fujitsu Limited have jointly developed a new material for a new generation of non-volatile Ferroelectric Random Access Memory (FeRAM). The...

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DDR Memories help optimize power and size in SoC designs.

Suited for PC and server applications with 800 Mbps max data rate, ARMÂ-® Velocity(TM) products support standard CMOS processes on 65, 90, 110, and 130 nm nodes. They are compliant with JEDEC standards for DDR, DDR2, Mobile DDR, and GDDR3 SDRAM. Velocity Mobile DDR solutions target low-power applications, while GDDR3 solutions target graphics memory interfaces with up to 1,600 Mbps data rate....

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MRAM Cells suit embedded macros in LSIs.

Possessing unified memory, Magnetoresistive Random Access Memory Cell Technology accelerates both read and write operation speeds. It consists of 2T1MTJ cell structure for 200 MHz random access write operation, 5T2MTJ cell structure for 500 MHz random access read operation, and write-line-inserted MTJ to reduce write current down to 1/3.

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NOR Flash Memory Devices target mobile platforms.

Offering Burst Mode and Multiple Bank architectures, AD MUX I/O portfolio includes standalone NOR Flash memories ranging from 16-64 Mbit densities in 1-bit-per-cell technology and 128-256 Mbit densities in 2-bit-per-cell technology. Units allow increase of data bus width with no pin count increase or reduction in pin count without loss of performance. They are available in 8 x 10 mm LFBGA88, 8 x...

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Memory Key is available in 4, 6, and 8 Gb capacities.

Featuring crush-resistant aluminum alloy case, USB-IF certified MicroKey has swiveling USB 2.0 connector with 1 m extension cable. Measuring 3.4 x 2 x .50 in. and weighing 2.5 oz, bus-powered device is hot swappable and offers plug-n-play functionality. Second Copy 2000 Synchronizing Software allows file sharing between multiple PCs, and Cryptainer Encryption Software offers privacy protection...

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Datakey Electronics, Inc. Announces the Availability of All Catalog Products in RoHS Compliant Versions

April 26, 2006. Savage, MN - Datakey Electronics, Inc., manufacturer of rugged, re-programmable memory Keys and Tokens has announced that all of their standard catalog products are available in RoHS compliant models. RoHS (Reduction of Hazardous Substances) is a European Union directive prohibiting products containing any of six specific substances. For electronics, lead-free construction is the...

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Data Transport Devices can store 128 Mb to 1 Gb of data.

Optimized for use in OEM systems controlled by embedded microprocessors, NFX-series Managed-Memory(TM) Tokens are used to transport data to and from non-networked electronics. They provide SPI interface for direct connection to microprocessors and USB electrical interface to facilitate connection to PCs. All interfaces are configuration-controlled for each OEM program, assuring long-term...

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INTEL First with 65nm NOR Flash Memory Chips

SANTA CLARA, Calif., April 4, 2006 - Intel Corporation is the first to sample NOR multi-level cell flash memory chips at 1-gigabit density using its advanced 65-nanometer (nm) process technology. Intel's NOR Flash memory chips are used in devices such as cell phones to manage critical phone operations, handle Personal Information Management data and to store photos, music and videos. Intel's...

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