SiHP065N60E V E Series MOSFET can withstand overvoltage transients.

Press Release Summary:

Housed in TO-220AB package, SiHP065N60E V E Series MOSFET features 0.065 Ω at 10 V maximum on-resistance and 49 nC gate charge down. Delivering 93 pF and 593 pF of Co(er) and Co(tr) low output capacitance respectively, unit reduces conduction and switching losses in power factor correction and hard switched DC/DC converters.


Original Press Release:

Fourth-Generation 600 V E Series Power MOSFET Lowers Conduction and Switching Losses, Increases Efficiency

Superjunction Device Provides Industry's Lowest RDS(ON)*Qg FOM for Telecom, Industrial, and Enterprise Applications

Vishay Intertechnology, Inc. (NYSE: VSH) today introduced the first device in its fourth generation of 600 V E Series power MOSFETs. Providing high efficiency for telecom, industrial, and enterprise power supply applications, the Vishay Siliconix n-channel SiHP065N60E slashes on-resistance by 30 % compared with previous 600 V E Series MOSFETs while delivering 44 % lower gate charge. This results in the industry's lowest gate charge times on-resistance, a key figure of merit (FOM) for 600 V MOSFETs used in power conversion applications.

"We are committed to providing our customers with a broad line of MOSFET technologies that support all stages of the power conversion process, from high-voltage inputs to the low-voltage outputs required by the latest electronic systems," said David Grey, senior director of market development for Vishay. "With the SiHP065N60E and the upcoming fourth-generation 600 V E Series family, we are addressing the need for efficiency and power density improvements in the first stages of the power system architecture — power factor correction and subsequent high-voltage DC/DC converter blocks."

Built on Vishay's latest energy-efficient E Series superjunction technology, the SiHP065N60E features low maximum on-resistance of 0.065 Ω at 10 V and ultra-low gate charge down to 49 nC. The device's FOM of 2.8 Ω*nC is 25 % lower than the closest competing MOSFET in the same class. For improved switching performance, the SiHP065N60E provides low effective output capacitances Co(er) and Co(tr) of 93 pf and 593 pF, respectively. These values translate into reduced conduction and switching losses to save energy in power factor correction and hard-switched DC/DC converter topologies for telecom, industrial, and enterprise power systems.

Offered in the TO-220AB package, the device released today is RoHS-compliant, halogen-free, and designed to withstand overvoltage transients in the avalanche mode with guaranteed limits through 100 % UIS testing.

Samples and production quantities of the SiHP065N60E are available now, with lead times of 10 weeks. Pricing for U.S. delivery only starts at $4.79 per piece in 1,000-piece quantities.

Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.

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