Power MOSFET optimizes on-resistance in SO-8 footprint.
Press Release Summary:
Supplied in PowerPAK® SO-8 package, Siliconix Si7145DP may be used as adaptor switch and for load switching applications in notebook computers and industrial/general systems. This 30 V p-channel power MOSFET offers max on-resistance down to 2.6 mW at 10 V gate drive and 3.75 mW at 4.5 V. On-resistance values help lower conduction losses, promoting power conservation and prolonging battery life between charges. Featuring halogen-free construction, device is 100% Rg- and UIS-tested.
Original Press Release:
Vishay Siliconix 30-V P-Channel TrenchFET® Gen III Power MOSFET Sets New Industry First with 2.6-mohm Maximum On-Resistance in SO-8 Footprint Area
MALVERN, PENNSYLVANIA - June 25, 2009 - Vishay Intertechnology, Inc. (NYSE: VSH) today released the industry's first 30-V p-channel power MOSFET in the SO-8 footprint area to boast maximum on-resistance down to 2.6 mW at a 10-V gate drive and 3.75 mW at 4.5 V. With these specifications, the new Vishay Siliconix Si7145DP, latest member of the TrenchFET® Gen III p-channel family, achieves the lowest on-resistance ever for this voltage rating and footprint.
Packaged in the PowerPAK® SO-8, the Si7145DP will be used as the adaptor switch and for load switching applications in notebook computers and industrial/general systems. Its low on-resistance translates into lower conduction losses, allowing the Si7145DP to do a better job of saving power and prolonging battery life between charges. This capability is especially important in adaptor switches (switching between the adaptor/wall power or the battery power), which are always on and drawing current.
The next-best 30-V p-channel device in the SO-8 footprint available from a competitor features maximum on-resistance of 3.1 mW at a 10-V and 4.3 mW at 4.5 V, meaning 16 % and 13 % higher than the Si7145DP.
Vishay Siliconix was the industry's first supplier to introduce Trench power MOSFETs. The company's TrenchFET intellectual property includes numerous patents, including fundamental technology patents dating from the early 1980s. Each new generation of TrenchFET technology yields products that raise the bar for power MOSFET performance in a wide range of computing, communications, consumer electronics, and many other applications.
The device is 100 % Rg- and UIS-tested and halogen-free.
Additional p-channel TrenchFET Gen III power MOSFETs with a range of voltage ratings and package options will be released by Vishay throughout 2009. Further information is available at www.vishay.com/mosfets/geniii-p/.
Samples and production quantities of the Si7145DP are available now, with lead times of 10 to 12 weeks for larger orders.
Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, MOSFETs, optoelectronics, and selected ICs) and passive electronic components (resistors, capacitors, inductors, sensors, and transducers). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Its product innovations, successful acquisition strategy, and "one-stop shop" service have made Vishay a global industry leader. Vishay can be found on the Internet at www.vishay.com.
TrenchFET and PowerPAK are trademarks of Siliconix incorporated
