Power MOSFET has low conduction and switching losses.
Press Release Summary:
TrenchFET Gen III Si7192DP, n-channel device in PowerPAK® SO-8 package, features maximum on-resistance of 2.25 mW at 4.5 V gate drive voltage. On-resistance times gate charge, key figure of merit (FOM) for MOSFETs in dc-to-dc converter applications, is 98. Unit is used as low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications. Low conduction and switching losses enable power- and space-efficient designs for VRMs and servers.
Original Press Release:
New 30-V TrenchFET Power MOSFET with Industry-Best Maximum 2.25-Milliohm On-Resistance at a 4.5-V Gate Drive Voltage Is First Device in Vishay Siliconix TrenchFET® Gen III Family
Device Also Features Industry-Best On-Resistance Times Gate Charge FOM of 98 Milliohms-Nanocoulombs
MALVERN, Pa. - Mar. 26, 2008 - The first device in a new third-generation TrenchFET® power MOSFET family offering record-breaking specifications for on-resistance and on-resistance times gate charge was released today by Vishay Intertechnology, Inc. (NYSE: VSH).
The new TrenchFET Gen III Si7192DP, an n-channel device in the PowerPAK® SO-8 package, features maximum on-resistance of 2.25 milliohms at a 4.5-V gate drive voltage. On-resistance times gate charge, a key figure of merit (FOM) for MOSFETs in dc-to-dc converter applications, is 98, a new industry record for any VDS = 30V, VGS = 20 V device in an SO-8 footprint. Compared to the closest competing devices optimized for low conduction losses and low switching losses respectively, these represent the best available specifications on the market. Lower on-resistance and lower gate charge translate into lower conduction and switching losses respectively.
The Vishay Siliconix Si7192DP will be used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications. Its low conduction and switching losses will enable more power-efficient and space-efficient designs for voltage regulator modules (VRMs), servers, and a wide range of systems using point-of-load (POL) power conversion.
Siliconix was the industry.s first supplier to introduce Trench power MOSFETs. The company's TrenchFET IP includes numerous patents, including fundamental technology patents dating from the early 1980s. Each new generation of TrenchFET technology yields products that raise the bar for power MOSFET performance in a wide range of computing, communications, consumer electronics, and many other applications.
Samples and production quantities of the Si7192DP are available now, with lead times of 10 to 12 weeks for large orders.
Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, transistors, and optoelectronics and selected ICs) and passive electronic components (resistors, capacitors, inductors, sensors, and transducers). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Its product innovations, successful acquisition strategy, and ability to provide "one-stop shop" service have made Vishay a global industry leader. Vishay can be found on the Internet at www.vishay.com.
Sales contact: www.vishay.com/mosfets/sales
