P-Channel Power MOSFET offers RDS(on) of 41 mW at 4.5 V.
Press Release Summary:
Model SiA975DJ dual 12-V p-channel TrenchFET® Gen III power MOSFET features RDS(on) of 41 mW at 4.5 V, 60 mW at 2.5 V, and 110 mW at 1.8 V. This lowers conduction losses and voltage drop at peak currents, preventing undervoltage lockout conditions with IC/load. Measuring 2 x 2 mm, package is suited for use in handheld electronics. Halogen free unit is compliant to RoHS directive 2002/95/EC.
Original Press Release:
Vishay Siliconix Extends P-Channel TrenchFET® Gen III Technology to Dual 12-V Power MOSFET; New Device Lowers On-Resistance up to 32% in 2-mm by 2-mm Footprint Area
MALVERN, PENNSYLVANIA - Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new dual 12-V p-channel TrenchFET® Gen III power MOSFET with the lowest on-resistance ever achieved for a dual p-channel device in the thermally enhanced PowerPAK® SC-70 2-mm by 2-mm footprint area.
With the SiA975DJ, Vishay extends its p-channel TrenchFET Gen III technology to dual 12-V power MOSFETS in the ultra-small PowerPAK SC-70 package for handheld electronics. The new device will be used for load, PA, and battery switches in game consoles and portable devices such as cell phones, smart phones, PDAs, and MP3 players.
For these devices, the lower on-resistance of the SiA975DJ translates into lower conduction losses, allowing the device to perform switching tasks with less power than any previous dual p-channel power MOSFETs on the market in ultra-small packages, thus prolonging battery life between charges. The MOSFET's low on-resistance also means a lower voltage drop at peak currents to better prevent undervoltage lockout conditions with the IC/load. Alternatively, the designer may be able to use a lower-voltage battery.
The SiA975DJ offers an ultra-low on-resistance of 41 mW at 4.5 V, 60 mW at 2.5 V, and 110 mW at 1.8 V. The closest competing 20-V p-channel device with an 8-V gate-to-source rating features an on-resistance of 60 mW at a 4.5-V gate drive and 80 mW at 2.5 V. These values are 32% and 25% higher, respectively, than the SiA975DJ.
The compact 2-mm by 2-mm footprint of the SiA975DJ's PowerPAK SC-70 package is half the size of the TSOP-6, while offering comparable on-resistance. 100% Rg tested, the MOSFET is halogen free in accordance with IEC 61249-2-21 and compliant to RoHS directive 2002/95/EC.
Samples and production quantities of the new SiA975DJ TrenchFET power MOSFET are available now, with lead times of 16 weeks for larger orders.
Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, MOSFETs, optoelectronics, and selected ICs) and passive electronic components (resistors, capacitors, inductors, sensors, and transducers). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Its product innovations, successful acquisition strategy, and "one-stop shop" service have made Vishay a global industry leader. Vishay can be found on the Internet at www.vishay.com.
