New RF Power Transistors and Integrated RF Power Modules for Pulsed Radar Applications Showcased at IMS 2018

Press Release Summary:

Integra displays new RF power devices at International Microwave Symposium. IGNP0912L1KW, an RF power module offers high thermal stability and supplies 1000 W of peak pulse power under the conditions of 2.5ms pulse width. IGT5259L50, a 50-ohm GaN/SiC transistor features 50W at 5-6 GHz and is ideal for pulsed C-band radar applications. IGN1214L500B high power GaN/SiC HEMT transistor includes 50V drain bias, 15.5 dB gain and 65% efficiency. It provides 500 W at 1.2 to 1.4 GHz with 50V drain bias.


Original Press Release:

Integra to Showcase New 50-Ohm Transistors and Integrated Power Amplifier Modules at IMS 2018

El Segundo, California (USA) – June 8, 2018 – Integra Technologies, a leading designer and supplier of high-power RF Power Transistors and RF Power Modules, is excited to be showcasing several new RF power devices at this year’s International Microwave Symposium in Philadelphia, PA, June 12th – 14th. They will be at booth #815.

Integra will be reviewing an exciting array of new 50-ohm (fully matched) RF Power Transistors and integrated RF Power Modules (aka “Pallets”) for pulsed radar applications.

Among the new releases, IGNP0912L1KW is a 50-ohm gallium nitride on silicon carbide (GaN/SiC), RF power module for L- band avionics systems operating over the instantaneous bandwidth of 0.960 - 1.215 GHz. This integrated amplifier module supplies a minimum of 1000 W of peak pulse power, under the conditions of 2.5ms pulse width, and 20% duty cycle, while offering excellent thermal stability. IGT5259L50 is a 50-ohm GaN/SiC transistor, offering 50 W at 5 - 6 GHz for pulsed C-band radar applications. IGN1214L500B is a high-power GaN/SiC HEMT transistor that supplies 500 W at 1.2 - 1.4 GHz, and offers 50V drain bias, 15.5 dB gain, and 65% efficiency. This transistor is designed for long-pulse L-band radar applications.

Learn more on Integra’s new website at and visit them at IMS 2018 in booth #815 to learn more about how Integra can help you find your power!

About Integra Technologies, Inc. | | Integra is a leading designer, manufacturer, innovator, and global supplier of high-power RF and microwave transistors and power amplifiers. They have a demonstrable heritage as a provider of dependable standard and custom solutions for low to high volume radar, avionics, defense, communications, EW, and ISM programs. The technologies that Integra fabricates with include GaN/SiC HEMT, SiLDMOS, Si-VDMOS, and Si-Bipolar semiconductor approaches proven in their own fab and with redundant partners.

Agency Contact: Angela McGrath,, 978-463-0780

Company Contact: Sales,, 310-606-0855

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