Integra Technologies, Inc.

New Evaluation Kit Helps Designers with High Power Amplifier Designs

New Evaluation Kit Helps Designers with High Power Amplifier Designs

Integra Technologies, Inc. recently released Gallium Nitride on Silicon Carbide, GaN-on-SiC, HEMT transistor evaluation kits. The kits are intended to help designers with their evaluations regarding high power amplifier designs. Included in each kit is a designer’s transistor model of choice, a second spare device and a test fixture with one transistor fully mounted and tested.

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New IGN1011L1200 L-Band Avionics Transistor Offers a Gain of More Than 17 dB
Electronic Components & Devices

New IGN1011L1200 L-Band Avionics Transistor Offers a Gain of More Than 17 dB

Integra’s IGN1011L1200 L-Band Avionics Transistor is assembled via chip and wire technology with utilization of gold metallization. The unit offers an operating frequency of 1.03 - 1.09 GHz range, 50 V supply voltage and 6.4% duty factor. It is suitable for use in under class AB operation where negative gate voltage and bias sequencing is required. The transistor is housed in metal-based...

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New Avionics Transistor from Integra Technologies Features 120W Peak Output Power
Electronic Components & Devices

New Avionics Transistor from Integra Technologies Features 120W Peak Output Power

Integra Technologies’ new IGN1011L120 is an IFF avionics transistor uses GaN/SiC technology. It is designed for IFF avionic applications and is a high power GaN transistor. The transistor is specified for use under Class AB operation. The IGN1011L120 operates at 1.03 - 1.09 GHz, and has a minimum of 120W of peak pulse power, at 50V bias voltage and 6.4% duty factor. It is made with chip and...

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New RF Power Transistors and Integrated RF Power Modules for Pulsed Radar Applications Showcased at IMS 2018
Controls & Controllers

New RF Power Transistors and Integrated RF Power Modules for Pulsed Radar Applications Showcased at IMS 2018

Integra displays new RF power devices at International Microwave Symposium. IGNP0912L1KW, an RF power module offers high thermal stability and supplies 1000 W of peak pulse power under the conditions of 2.5ms pulse width. IGT5259L50, a 50-ohm GaN/SiC transistor features 50W at 5-6 GHz and is ideal for pulsed C-band radar applications. IGN1214L500B high power GaN/SiC HEMT transistor includes 50V...

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Integra Introduces New 50-Ohm Matched Power Devices for Pulsed Radar Applications
Controls & Controllers

Integra Introduces New 50-Ohm Matched Power Devices for Pulsed Radar Applications

Integra Power Devices include RF power Module (IGNP0912L1KW) and GaN/SiC transistors (IGT5259L50 and IGN1214L500B). IGNP0912L1KW module is operated over instantaneous bandwidth of 0.960-1.215 GHz and delivers 1000 W of minimum peak pulse power with 2.5 ms pulse width and 20% duty cycle. IGN1214L500B transistor is suitable for L-band radar applications and provides 500 W of power at 1.2-1.4 GHz,...

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New GaN-on-SiC Transistors are Assembled Using Chip and Wire technology
Electronic Components & Devices

New GaN-on-SiC Transistors are Assembled Using Chip and Wire technology

GaN-on-SiC Transistors from Integra Technologies are available in IGT2731M130 (130 W) and IGT3135M135 (135 W) models. IGT2731M130 unit is operated in 2.7 to 3.1 GHz frequency range with gain of 13.5 dB whereas the IGT3135M135 model in 3.1 to 3.5 GHz range. Units come in 20.32 mm wide and 10.16 mm long PL44A1 metal-based package with a ceramic-epoxy lid sealing. Designed for S-band radar...

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Company News

App. Note Demonstrates How to Utilize Fail-Safe Biasing in GaN Transistors

EL SEGUNDO, California (USA) – November 6, 2018 – Integra Technologies (www.integratech.com) a leading designer and supplier of high-power RF Power Transistors and RF Power Modules, has published an application note on to how to best utilize the fully automatic and fail-safe bias circuit feature in their line of high power GaN transistors that only requires a single positive voltage power...

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New Evaluation Kit Helps Designers with High Power Amplifier Designs

New Evaluation Kit Helps Designers with High Power Amplifier Designs

Integra Technologies, Inc. recently released Gallium Nitride on Silicon Carbide, GaN-on-SiC, HEMT transistor evaluation kits. The kits are intended to help designers with their evaluations regarding high power amplifier designs. Included in each kit is a designer’s transistor model of choice, a second spare device and a test fixture with one transistor fully mounted and tested.

Read More »
Company News

While GaN-on-SiC RF Transistors are Ruling New High Power Amplifier Design Slots, Si Bipolar, LDMOS and VDMOS Transistors are Still Actively Serving Unique Radar System Requirements

EL SEGUNDO, California (USA) – September 27, 2018 – Integra Technologies, a leading designer and supplier of high-power RF and microwave transistors and amplifiers, comes this insight: “Don’t rule out silicon (Si) bipolar, LDMOS, or VDMOS transistors just yet.” The company has yet to obsolete these legacy transistors because they’re still in high demand in unique and legacy...

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New IGN1011L1200 L-Band Avionics Transistor Offers a Gain of More Than 17 dB
Electronic Components & Devices

New IGN1011L1200 L-Band Avionics Transistor Offers a Gain of More Than 17 dB

Integra’s IGN1011L1200 L-Band Avionics Transistor is assembled via chip and wire technology with utilization of gold metallization. The unit offers an operating frequency of 1.03 - 1.09 GHz range, 50 V supply voltage and 6.4% duty factor. It is suitable for use in under class AB operation where negative gate voltage and bias sequencing is required. The transistor is housed in metal-based...

Read More »
New Avionics Transistor from Integra Technologies Features 120W Peak Output Power
Electronic Components & Devices

New Avionics Transistor from Integra Technologies Features 120W Peak Output Power

Integra Technologies’ new IGN1011L120 is an IFF avionics transistor uses GaN/SiC technology. It is designed for IFF avionic applications and is a high power GaN transistor. The transistor is specified for use under Class AB operation. The IGN1011L120 operates at 1.03 - 1.09 GHz, and has a minimum of 120W of peak pulse power, at 50V bias voltage and 6.4% duty factor. It is made with chip and...

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Company News

White Paper Presents Rationale for High Voltage GaN HEMT Technology in Wideband Radar Applications

EL SEGUNDO, California (USA) – August 9, 2018 – Integra Technologies, a leading designer and supplier of high-power RF Power Transistors and RF Power Modules, offers a White Paper, describing the rationale for utilizing high voltage GaN HEMT technology in wideband radar and avionic systems. The signal discussed is a pulse of 100 μs width and 10% duty cycle. This paper explores the design...

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Company News

White Paper Discusses Using kW-Level GaN Transistors for Radar and Avionic Systems

EL SEGUNDO, California (USA) – August 1, 2018 – Integra Technologies, a leading designer and supplier of high-power RF Power Transistors and RF Power Modules, offers a white paper written by Integra’s Daniel Koyama, Apet Barsegyan, and John Walker, describing the implications of using kW-level GaN transistors in radar and avionic systems. This paper examines the effect of using normal Class...

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Company News

New RF Transistor and Power Modules Guide from Integra

EL SEGUNDO, California (USA) – June 27, 2018 – Integra Technologies, a leading designer and supplier of high-power RF Power Transistors and RF Power Modules, releases their new 2018 product selection guide. Integra's new product guide is a clean and easy to use brochure detailing their extensive line of RF power devices, including RF Power Transistors for new and legacy designs, 50-ohm RF...

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