IGT5259L50 GaN/SiC Transistor features a gain of 14 dB.
Press Release Summary:
IGT5259L50 GaN/SiC Transistor is suitable for C-band pulsed radar applications. Unit offers 50W of peak pulsed output power at 50V drain bias and covers frequency range from 5.2 to 5.9 GHz. Product is housed in 20.32 Wide x 10.16 mm long RoHS-compatible flange-mount package with gold metallization and is fully-matched to 50 Ω. Transistor meets MIL-STD-750D specifications.
Original Press Release:
Fully-Matched High-Power GaN/SiC Transistor Offers 50W at 5-6 GHz
Integra Technologies, a leading designer and supplier of high-power RF and microwave transistors and amplifiers, announces the release of a fully-matched, GaN/SiC transistor, offering 50W at 5-6 GHz.
Designed for pulsed C-Band Radar applications, the IGT5259L50 high-power GaN-on-SiC HEMT transistor is fully-matched to 50 Ohms and supplies 50W of peak pulsed output power at 50V drain bias. This product covers the frequency range 5.2-5.9 GHz with instantaneous response, and features 14 dB of gain, and 43% efficiency at 1 millisecond/15% pulse conditions.
The device is housed in a RoHS-compatible metal/ceramic flange-mount package with gold metallization. It provides excellent thermal dissipation, and measures 0.800” (20.32mm) wide and 0.400” (10.16mm) in length. It is 100% high-power RF tested in a 50 Ohms RF test fixture and meets all specifications of MIL-STD-750D. Internal assembly is done with a chip and wire approach by expert certified assemblers.
This 50W transistor is an ideal solution for C-band pulsed radar system designs that require immediate full power and high gain.
About Integra Technologies, Inc.| www.integratech.com
Integra is a leading designer, manufacturer, innovator, and global supplier of high-power RF and microwave transistors and power amplifiers. They have a demonstrable heritage as a provider of dependable standard and custom solutions for low to high volume EW, radar, avionics, defense, communications, and ISM programs. The technologies that Integra fabricates with include GaN/SiC HEMT, Si LDMOS, Si-VDMOS, and Si-Bipolar semiconductor approaches proven in their own fab and with redundant partners.
