GaAs FETs are optimized for power added efficiency.
Press Release Summary:
Gallium arsenide field effect transistors (GaAs FETs) are targeted toward microwave radios and block up-converters. As X-Band GaAs FET for microwave digital radios supporting point-to-point and point-to-multipoint terrestrial communications, TIM1011-8ULA operates in 10.7-11.7 GHz range and has power added efficiency of 39%. For Ku-band, TIM1213-8ULA and TIM1213-8ULA, respectively, operate in 12.7-13.2 GHz and 13.75-14.5 GHz ranges and offer power efficiencies of 35% and 32%.
Original Press Release:
New High Gain, High Power Added Efficiency X and Ku-Band GaAs FETs from Toshiba for Microwave Radios and Block up-Converters
Three Amplifiers Optimized for Power Added Efficiency Provide Energy Savings and Higher Gain
IRVINE, Calif., June 9 -- Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., announced the expansion of its gallium arsenide field effect transistor (GaAs FETs) lineup with three new devices optimized for power added efficiency. The Power Added Efficiency enhanced GaAs FETs are targeted for microwave radios and block up-converters (BUCs) and will be exhibited in TAEC's booth, #623, at the 2009 IEEE MTT-S International Microwave Symposium, which will be held June 7 through 12 in Boston, Massachusetts.
A new X-Band GaAs FET for microwave digital radios supporting point-to-point and point-to-multipoint terrestrial communications, the TIM1011-8ULA, operates in the 10.7 to 11.7 GHz(1) range. The TIM1011-8ULA has output power at 1dB gain compression point of 8W, or 39.5dBm (typ.), linear gain of 9.0dB (typ.) and power added efficiency of 39 percent. Toshiba commercially launched a similar product, the TIM1011-8UL, in 2008. The new device is in a different package, a 2-11C1B, to support existing customers using legacy products.
For Ku-band, Toshiba has added two power amplifiers. The first, TIM1213-8ULA operates in the 12.7 to 13.2 GHz range, and while the other, TIM1314-15UL, operates in the 13.75 to 14.5 GHz range. TIM1213-8ULA is targeted for use in microwave radios for microwave links and TIM1314-15UL is optimized for satellite block up-converter (BUCs) applications, for very small aperture terminals (VSAT) and solid-state power amplifiers (SSPAs). The TIM1213-8ULA has output power at 1dB gain compression point of 39.5dBm (typ.), gain of 8.0dB (typ.) and power efficiency of 35 percent. The TIM1314-15UL features output power at 1dB gain added compression point of 42dBm (typ.), gain of 7.0dB (typ.) and power added efficiency of 32 percent.
"Following the launch of our 'UL' Power Added Efficiency enhanced 2W and 8W devices for X-band in 2008, Toshiba is expanding the product family with another X-band amplifier as well as two long-awaited devices in the Ku-band frequency range. With energy-saving features associated with higher gain, we believe that these amplifiers will help our customers design more advanced telecommunication systems," said Homayoun Ghani, business development manager, Microwave, Logic, and Small Signal Devices, in TAEC's Discrete Business Unit.
Technical Specifications
Product Characteristics TIM1011-8ULA TIM1213-8ULA TIM1314-15UL
Frequency 10.7-11.7GHz 12.7-13.2GHz 13.75-14.5GHz
Band X-Band Ku-Band Ku-Band
Output Power, P1dB(typ.) 8W 8W 15W
Gain, G1dB(typ.) 9.0dB 8.0dB 7.0dB
Power Added Efficiency 39% 35% 32%
Pricing and Availability
Samples of the Toshiba Power Added Efficiency GaAs FET family are available now. For pricing, please contact your Toshiba representative.
Toshiba Microwave Product Overview
Toshiba is a leading supplier of high-performance gallium arsenide microwave devices. The company's line-up of products consists of a series of components within the S, C, X and Ku frequency bands, which are used in a wide variety of wireless applications. These applications include personal communications systems (PCS), multi channel distribution systems (MMDS), Wireless LAN/WAN systems, point-to-point terrestrial microwave radio, wireless local loop (WLL), satellite communications systems (SATCOM) such as high power solid state power amplifiers (SSPA) and very small aperture terminals (VSAT), radar systems, mobile communications, and other communication systems. Toshiba is also expanding its family of higher gain, higher output power GaN devices for applications in satellite communications, terrestrial point-to-point communications, radar systems and medical uses.
*About TAEC
Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, distributions and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, discrete devices, displays, advanced materials, medical tubes, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers and wireless components that make possible today's leading cell phones, MP3 players, cameras, medical devices, automotive electronics and more.
Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer and the world's third largest semiconductor manufacturer (Gartner, 2008 WW Semiconductor Revenue, April 2009). For additional company and product information, please visit http://www.toshiba.com/taec/.
Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications. In developing designs, please ensure that Toshiba products are used within specified operating ranges as set forth in the most recent Toshiba product specifications and the information set forth in Toshiba's "Handling Guide for Semiconductor Devices," or "Toshiba Semiconductor Reliability Handbook." This information is available at www.chips.toshiba.com, or from your TAEC representative.
(1) For purposes of measuring frequency in this context, one Gigahertz (GHz) = 1,000,000,000 cycles per second.
CONTACT: Rebecca Bueno of Toshiba America Electronic Components, Inc., +1-949-623-3099, rebecca.bueno@taec.toshiba.com; or Jan Johnson of +MultiPath Communications, +1-714-633-4008, jan@multipathcom.com, for Toshiba America Electronic Components, Inc.
