Sirenza Microdevices
Broomfield, CO 80021
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Linear Amplifier offers performance from 50-4,000 MHz.
Available in RoHS/WEEE compliant SOT-89 package, Model SGA-9089Z Silicon Germanium (SiGe) high linearity, medium power discrete product can be biased from 2.7-3.3 V over wide range of currents to deliver linearity, noise figure, and power up to 24 dBm. One-quarter watt SGA-9089Z is suitable for 3G, cellular, fixed wireless, and various other low noise and driver amplifier applications.
Read More »LDMOS Transistor is suited for RF power applications.
Available in RoHS/WEEE-compliant ceramic flanged package, SLD-3091FZ Laterally Diffused Metal Oxide Semiconductor (LDMOS) 30 W transistor promotes design versatility and performance over 10-1,600 MHz range. It is fabricated in XeMOS II(TM) semiconductor process technology and, at 30 W output power (915 MHz), delivers 18 dB gain, 45% drain efficiency, and 28 dBc third order intermodulation...
Read More »LDMOS Transistor features thermally efficient packaging.
Housed in RoHS/WEEE compliant plastic encapsulated surface mount package, SLD-1026Z Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor offers performance from 10-2,700 MHz. Transistor operates from 28 V, 50 mA current, and provides 19 dB gain, 35% drain efficiency, and -28 dBc 3rd order intermodulation products at 3 W output power. Product is suited for driver and power amplifiers in...
Read More »Wideband Amplifiers are designed for microwave applications.
Providing alternative to distributed amplifiers for applications requiring frequencies extending through X and Ku bands, SUF series E-Mode pHEMT wideband amplifiers operate directly off single +3.3 or +5.0 V supply voltage, and employ 50 W broadband match. MMIC Darlington amplifiers include 5 models, SUF-1000 to SUF 5000, offering from DC-20 GHz to 0.10-10 GHz and 10-19 dB of gain.
Read More »Power Amplifier is suited for WiMAX applications.
Model SZM-3066Z high linearity 2 W power amplifier enables connectivity and high throughput in WiMAX customer premises equipment, access points, and base station equipment. Produced in InGaP HBT technology, it operates over 3.3-3.8 GHz frequency range with 34 dB gain while providing +26 dBm of linear power @ 2.5% EVM. Operating from +5 Vdc supply, it features adjustable on-chip active bias...
Read More »Amplifiers target high volume, power sensitive applications.
Housed in QFN package, 2-stage fully-matched RFIC silicon germanium low noise amplifier (LNA) SGL-0622Z offers broadband performance from 5-4,000 MHz. Single-stage SGL-0363Z LNA is optimized for narrowband applications from 5-2,000 MHz. Suitable for GPS, ISM, and WiMAX applications, models are available in ROHS/WEEE compliant packages.
Read More »Linear Amplifier offers performance from 50-4,000 MHz.
Available in RoHS/WEEE compliant SOT-89 package, Model SGA-9089Z Silicon Germanium (SiGe) high linearity, medium power discrete product can be biased from 2.7-3.3 V over wide range of currents to deliver linearity, noise figure, and power up to 24 dBm. One-quarter watt SGA-9089Z is suitable for 3G, cellular, fixed wireless, and various other low noise and driver amplifier applications.
Read More »LDMOS Transistor is suited for RF power applications.
Available in RoHS/WEEE-compliant ceramic flanged package, SLD-3091FZ Laterally Diffused Metal Oxide Semiconductor (LDMOS) 30 W transistor promotes design versatility and performance over 10-1,600 MHz range. It is fabricated in XeMOS II(TM) semiconductor process technology and, at 30 W output power (915 MHz), delivers 18 dB gain, 45% drain efficiency, and 28 dBc third order intermodulation...
Read More »LDMOS Transistor features thermally efficient packaging.
Housed in RoHS/WEEE compliant plastic encapsulated surface mount package, SLD-1026Z Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor offers performance from 10-2,700 MHz. Transistor operates from 28 V, 50 mA current, and provides 19 dB gain, 35% drain efficiency, and -28 dBc 3rd order intermodulation products at 3 W output power. Product is suited for driver and power amplifiers in...
Read More »Wideband Amplifiers are designed for microwave applications.
Providing alternative to distributed amplifiers for applications requiring frequencies extending through X and Ku bands, SUF series E-Mode pHEMT wideband amplifiers operate directly off single +3.3 or +5.0 V supply voltage, and employ 50 W broadband match. MMIC Darlington amplifiers include 5 models, SUF-1000 to SUF 5000, offering from DC-20 GHz to 0.10-10 GHz and 10-19 dB of gain.
Read More »Power Amplifier is suited for WiMAX applications.
Model SZM-3066Z high linearity 2 W power amplifier enables connectivity and high throughput in WiMAX customer premises equipment, access points, and base station equipment. Produced in InGaP HBT technology, it operates over 3.3-3.8 GHz frequency range with 34 dB gain while providing +26 dBm of linear power @ 2.5% EVM. Operating from +5 Vdc supply, it features adjustable on-chip active bias...
Read More »Amplifiers target high volume, power sensitive applications.
Housed in QFN package, 2-stage fully-matched RFIC silicon germanium low noise amplifier (LNA) SGL-0622Z offers broadband performance from 5-4,000 MHz. Single-stage SGL-0363Z LNA is optimized for narrowband applications from 5-2,000 MHz. Suitable for GPS, ISM, and WiMAX applications, models are available in ROHS/WEEE compliant packages.
Read More »