Macom Technology Solutions
Lowell, MA 01851
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Broadband Amplifiers provide up to 16 W.
Suited for communications and military applications, Model MAAPGM0074-DIE covers 2.0-8.0 GHz with output power of 8 W and 14 dB gain, while MAAPGM0076-DIE ranges from 1.3-2.5 GHz with 16 W output and 25 dB gain. Offering output power of 13 W, Model MAAPGM0077-DIE covers 0.7-2.5 GHz with 23 dB gain, and 12 W MAAPGM0078-DIE covers 2-6 GHz with 20 dB gain. Amplifiers are fabricated using...
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SPDT Switch suits applications with fast settling times.
Fabricated on 0.5-micron gate-length GaAs pHEMT process, MASWSS0192 features nominal settled on resistance of 2.5 ohm with less than 0.15 ohm change after 15 Ã-µs. This 0.5-3.0 GHz SPDT 3.0 V switch has typ insertion loss of 0.18 dB, isolation of 24 dB, and full passivation. In addition to RoHS-compliant, lead-free SC-70 (SOT-363) packaging, switch features power handling capabilities with...
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X-Band Amplifier suits military/commercial applications.
Fabricated using MSAG (Multi-function Self-Aligned Gate) process, MAAPGM0079-DIE is COTS 3-stage X-band amplifier suited for use in commercial avionics, weather radar, and military radar systems. It produces 20 W over 8.0-10.0 GHz range and 16 W over full 7.5-10.5 GHz range with typ gain of 29 dB. Unit requires +10 V and negative supply voltages and uses 6 A under compression. MTTF is 1 million...
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SiGe Power Amplifier suits 802.11b/g WLAN applications.
RoHS-compliant MAAPSS0075 is 2.4 GHz, 3-stage linear power amplifier with integrated power detector and separate power mode pin. Supplied in 3 mm, 12-lead PQFN plastic package, product exhibits typ linear gain of 32 dB with operating voltage of 3.3 V. In 802.11g applications, unit achieves 19 dBm linear output power while drawing 160 mA of current and maintaining EVM of less than 3.5%. Unit...
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DPDT Switch suits high power handling applications.
Housed in lead-free PQFN package, 0.5-4.0 GHz Model MASWSS0184 is suited for 802.16 and MESH network applications that require high power handling at P1 dB of 40 dBm, low insertion loss of 1.0 dB, and isolation of 30 dB. RoHS-compliant switch is fabricated on 0.5 micron gate-length GaAs process with full passivation. It is suited for 2 antenna solutions requiring diversity switching in linear...
Read More »Discrete Diodes are available in plastic, SMT package.
Offered in RoHS-compliant and non-RoHS-compliant versions, PIN, Schottky, and varactor diodes are available in miniature, 2-leaded SC-79 package that features 0.6 nH inductance and meets 260Ã-
Read More »Beam Lead PIN Diode is scratch- and impact-resistant.
Fabricated with HMIC silicon-glass process on epitaxial wafers, MA4PBL027 is fully passivated with silicon dioxide, silicon nitride, and BCB protective polymer. Its Ct of 30 fF, Rs of 2.8 V, and Ls of 0.3 nH make product suited for multi-throw switches, switched-pad attenuators, and switched line phase shifters in microwave control circuits. Switching speeds less than 50 ns are achieved with...
Read More »Transmitter suits space-sensitive telemetry applications.
Programmable S-band FM Telemetry Transmitter, 1 W Model MATM-090007-SA00XX, measures 31.8 x 41.4 x 5.1 mm and is available in other form factors, including 48 mm dia unit. Fully customizable device uses +5.0 V regulated supply voltage with reverse bias and over-voltage protection. It is capable of achieving data range of 500 Kbps to 20 Mbps and has average DC to RF efficiency of 33%. Applications...
Read More »Wideband ELINT Tuner suits high-end military applications.
Based on SEI-certified, SMR-3822 RF Microwave Sweeping Receiver technology, Model TU-3840 offers frequency coverage of 0.1-20 GHz, extendable up to 40 GHz with FE-3820, and is controlled by remote work station such as desktop or laptop computer. Unit features IF outputs at 1 GHz and 160 MHz, fixed frequency tuning and F1-F2 sweep, Ethernet 100BaseT or RS-232/422 control, and optional RF blanking...
Read More »PIN Diodes suit commercial and military applications.
Featuring standard 0402 footprint, packageless Surmount Series MA4SPS42x and MA4PD-042005 are manufactured using Vertical Etch Technology, which facilitates heat transfer through silicon cylinder. Offering peak power of 500 W, 100 Ã-µm I-region Series MA4SPS42x features 1 Ã-µS pulse width, 0.001 duty cycle, and average power of 10 W. With peak power of 50 W, 5 Ã-µm I-region Series...
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