Opto Diode Corp.
Newbury Park, CA 91320
Jul 01, 2008 Hermetically sealed in TO-39 can for integration into new or existing systems, 5 mm² Model ODA-5WB-100K offers wavelength response of 28 V/mW at 450 nm, responsivity range from 400-1,100 nm, and peak spectral response of 940 nm. Blue/green-enhanced device features storage and operating temperatures from -25 to +100°C, and is suited for industrial and biomedical applications, such as fluorescence and phosphorescence.

Discovery Semiconductors Inc.
Princeton Junction, NJ 08550
Feb 21, 2008 Offering linearity with third order intercept point as high as 50 dBm, 40 Gbps photodiode and receiver feature differential GPPO RF outputs that enable reception of all pre-amplified and unamplified 40G modulation formats. Receiver package interfaces to commercial CDR/DEMUX modules, and products address several modulation formats: ASK, DPSK, and DQPSK. Receiver configurations include single, balanced, and dual detection schemes, with and without transimpedance amplification.

Opto Diode Corp.
Newbury Park, CA 91320
Jan 25, 2008 Packaged in hermetically sealed TO-39 can, Near-Infrared (NIR) Red-Enhanced 5 mm² ODA-5W-100K Photodiode-Preamplifier combination device offers 500 MW gain. High-sensitivity, NIR wavelength response at 940 nm is 63 V/mW (typ) and 55 V/mW (min). With operating and storage temperature ranges of -25 to +100°C, product suits applications such as medical diagnostics, test and measurement, or other tasks that require low-light (under 1 mW) level detection.

International Radiation Detectors
Torrance, CA 90505
Nov 12, 2007 Featuring 10 x 10 mm² active area, SXUV 100 Ultraviolet/Extreme Ultraviolet (UV/EUV) Photodiode has nitrided metal silicide front window that permits operation without loss of performance in high-humidity and other environmental conditions that normally require sealed packages. Photon detector is designed for long-lifetime operation in high-particle flux environments without loss of responsivity. Diodes with single active areas are available from 1-576 mm².

Vishay Intertechnology, Inc.
Malvern, PA 19355 2143
Aug 28, 2007 Qualified to AEC Q101 automotive standard, Models TEMD6010FX01 and TEMD5510FX01 utilize infrared filtering epoxy technology to match spectral sensitivity of human eye with minimal sensitivity to light beyond visible range. Photodiodes provide linear response to illuminance from 0.1 lux to 100 klux with lot-to-lot repeatability over extended operating temperature range of -40°C to +100°C. Units are RoHS compliant, free of halogens, and compatible with lead-free soldering.

Opto Diode Corp.
Newbury Park, CA 91320
Apr 03, 2007 With chip dimensions of .100 x .048 in. (per element), red enhanced ODD-3W-2 Bi-Cell Photodiode offers spectral response of 0.55 A/W at 900 nm and shunt resistance at 250 MW min. This low-noise product comes in TO-5 cans to facilitate integration and operates over -40 to +125°C range. Uses include position sensing applications, emitter alignment, test and measurement, and other industrial tasks where single axis nulling is required.

Hamamatsu
Bridgewater, NJ 08807 0910
Jul 19, 2006 Featuring 10 x 10 mm active area, S8664-1010 silicon APD (avalanche photodiode) is suited for design into analytical instruments for low-light-level measurement. Detector's spectral response range is 320-1000 nm, with peak wavelength at 600 nm. At 600 nm, quantum efficiency is approximately 85% and gain is 50. Featuring high sensitivity in visible spectrum, high gain, low noise, and low capacitance, unit comes in ceramic housing with epoxy resin window.

Goodrich Corp.
Charlotte, NC 28217
Feb 01, 2006 Designed for Geiger or Linear Mode single-photon counting at wavelengths from 0.9-1.6 microns, SU055-GM-APD-FO consists of one indium gallium arsenide/indium phosphide, near-infrared (NIR), avalanche photodiode (APD). It incorporates APD chip, thermoelectric cooler, thermistor, and optical fiber coupling optics into hermetic package. Along with quantum efficiency of over 70%, unit offers low-noise analog optical detection up to approximately 1 GHz.

Vishay Intertechnology, Inc.
Malvern, PA 19355 2143
Jul 17, 2005 Manufactured in 4.24 x 5.0 x 1.12 mm package, lead-free TEMD5xxx Family promotes response time and sensitivity through optional daylight filtering and choice of 2 radiant-sensitive areas measuring 7.5 and 5.7 mm². Models TEMD5010 and TEMD5020 provide visible-light sensitivity from 400–1,100 nm. With integrated daylight filters and peak sensitivity of 850 nm, TEMD5110 and TEMD5120 are suited for detecting IR light. All 4 devices feature 65° viewing angle.

Hamamatsu
Bridgewater, NJ 08807 0910
Mar 24, 2005 Suited for direct detection of high-energy charged particles and X-rays, S9723/S9724 silicon (Si) PIN photodiodes have 26 x 26 mm and 10 x 10 mm active areas with 2 and 1 mm uniformity, respectively. Both utilize MEMS technology and accurately conduct DE-E detection of charged particles. Hole-mounted on PCBs, 100 (±5) mm thick S9723 and 10 (±2.5) mm thick S9724 have respective typ dark currents of 2 and 0.01 nA and rise times of 80 and 100 ns.

Ophir Optronics, Inc.
Danvers, MA 01923
Dec 22, 2004 Model PD10-pJ offers energy scales from 100 nJ to 200 pJ, as well as pulse rates up to 4,000 Hz. It can make energy measurements as low as 10 pJ. Unit features spectral response of 0.19-1.1 µm, max pulse width of 50 µs, and max average power density of 5 Wcm², with damage threshold of 0.1 J/cm². It is compatible with Nova, Nova II Handheld, LaserStar, Dual Channel LaserStar, and Orion-PE Handheld smart displays.

Opto Diode Corp.
Newbury Park, CA 91320
Aug 27, 2004 Series ODD-1 silicon photodiodes feature low dark current and responsivity of 400–1,100 nm. Thermal parameters range from -55 to 100°C for storage and operating, with lead soldering temperature of 240°C. TO-18 packaging makes units suited for standard commercial products and industrial photo controls. Case-isolated packaging is available.

Clairex Technologies, Inc.
Plano, TX 75074
Jun 17, 2004 CFE370, CFD470 and CFR520 feature self-aligning plastic lens caps, while CFR530 is a flat window, metal lens can device that provides hermetic seal. CFE370 contains an 850 nm AlGaAs DDH high speed fiber optic emitter with microlens centered on chip for efficient coupling. CFD470 contains 850 nm fiber optic PIN photodiode with 950 mil² active area. CFR520 and CFR530 contain 5 Mb direct coupled fiber optic receivers that feature low pulse width distortion.

Opto Diode Corp.
Newbury Park, CA 91320
Jun 10, 2004 Measuring 5 mm², ODD-5W silicon PIN photodiode features 2.52 mm active area diameter. It is offered in TO-5 flat-window packaging, with case-isolated packaging available upon request. Storage and operating temperature ranges from -55 to +100°C. Applications include medical instrumentation, industrial photo control, and optical instrumentation. Other areas of use include biotechnology and test and measurement aerospace, and commercial markets.

UDT Sensors, Inc.
Hawthorne, CA 90250
Feb 25, 2004 Silicon Avalanche Photodiodes have active area diameters from 300–900 mm and are sensitive from 400–1,100 nm. Offered in hermetically-sealed, TO-46 package, units come with flat window or micro lens cap. They are suited for tasks requiring light detection in visible and near infrared ranges, such as laser range finders, bar code readers, optical remote control, and high-speed photometry applications.

Discovery Semiconductors
Cranbury, NJ 08512
Feb 19, 2004 Series 700 consists of push-pull pairs of InGaAs photodiodes, each capable of handling large optical power in excess of 10 dBm. Models DSC710 and DSC720 are useful for 10 Gb DPSK and DPQSK markets, whereas Models DSC730 and DSC740 serve 40 Gb DPSK and DPQSK applications.

OSI Fibercomm
Hawthorne, CA 90250
Jan 13, 2004 With active area diameter of 300 mm, Model FCI-APD-300 provides light detection in visible and near infrared ranges. It features high responsivity/QE, high bandwidth, low capacitance, and low noise. Available in hermetically sealed, TO-46 package with flat window or micro lens cap, silicon avalanche sensor is suited for applications in high-speed optical communications, laser range finders, free space communications, and optical remote controllers.

UDT Sensors, Inc.
Hawthorne, CA 90250
Jan 12, 2004 Plastic encapsulated photodiodes incorporate short pass filter, which blocks wavelengths longer than 700 nm. Many standard and custom combinations are available. Miniaturization of these photodiodes assists engineers with development of micro-technology.

OSI Fibercomm
Hawthorne, CA 90250
Oct 08, 2003 FCI-InGaAs-XXX series photodiodes with TIAs, suited for datacom and telecom applications, are offered with active area sizes of 55, 70, and 120 mm. With spectral range from 900–1,700 nm, units are packaged in 4 lead, isolated TO-46 cans with AR coated flat windows or micro lenses. They are offered with FC, SC, ST and SMA receptacles and exhibit responsivity from 1,100–1,620 nm. They are suited for high-bit rate receivers in communication systems.

UDT Sensors, Inc.
Hawthorne, CA 90250
Oct 08, 2003 UV-SPOT Position Sensing Detector is segmented into 4 separate active areas with 0.005 in. gap between elements. It offers high stability over time and temperature within spectral range of 200–1,100 nm. Notch or bandpass filters can be added to achieve specific responses within spectral range. Position resolutions of better than 0.1 mm make photodiode suited for targeting and guidance systems, machine tool alignment, and beam centering.