Vishay Intertechnology, Inc.
Malvern, PA 19355 2143
Oct 27, 2009 Qualified to AEC-Q101, TEMD7x00X01 PIN photodiodes and TEMT7x00X01 phototransistors come in 0805 SMT package that measures 1.25 x 2.0 x 0.85 mm and are available with spectral sensitivity to UV, visible, and NIR or NIR only. Photodiodes combine 100 ns response time with spectral sensitivity range of 350-1,120 nm or 750-1,050 nm, while phototransistors offer light current of 450 µA and spectral sensitivity range of 470-1,090 nm or 750-1,010 nm with visible light filtering epoxy.

Opto Diode Corp.
Newbury Park, CA 91320
Jul 17, 2009 Operating from 550-720 nm, selective wavelength photodiode, ODD-660W suits fluorescence detection, color sensors, daylight sensors, light barriers, and medical diagnostics application. Hermetically-sealed unit features spectral bandwidth of 80 nm, storage and operating temperature between -30 to 85°C, and lead soldering temperature of up to 260°C. It provides low dark current without optical filters.

Opto Diode Corp.
Newbury Park, CA 91320
Jun 09, 2009 Designed for automotive and colorimetry industries, ODD-525W has active area of 0.62 mm², and peak sensitivity response of 525 nm. Features included are spectral bandwidth of 70 nm, and storage and operating temperatures range between -30°C to 85°C and lead soldering temperature at 260°C. Available in hermetically sealed standard TO-46 can, unit can be used in auto light-dimming, fluorescence detection, color sensors, and daylight detection tasks.

Opto Diode Corp.
Newbury Park, CA 91320
May 08, 2009 ODD-470W features spectral bandwidth of 100 nm and operates between 380-540 nm with peak sensitivity response at 470 nm. With low dark current and no optical filters used, photodetector is suited for use in color sensors, fluorescence detection, and medical diagnostic applications. Hermetically sealed, standard TO-46 can facilitates installation into existing or new systems. Storage and operating temperatures range from -30° to 85°C and lead soldering temperature is at 260°C.

Vishay Intertechnology, Inc.
Malvern, PA 19355 2143
Feb 16, 2009 Supplied in 0805-sized, SMT package with 0.85 mm profile and 2-pin connection, AEC-Q101-Qualified TEMD6200FX01 reacts to light for automatic control of LCD brightness and keypad backlighting in automotive applications. Integrated IR filtering epoxy technology matches spectral sensitivity of human eye, with minimal sensitivity to light beyond visible range. Characteristics include angle of half sensitivity of ±60°, radiant sensitive area of 0.3 mm², and peak sensitivity of 540 nm.

Discovery Semiconductors Inc.
Ewing, NJ 08628
Feb 10, 2009 Designed for 40 Gb/s and 100 Gb/s optical communications, Quad InGaAs Photodiode Arrays consist of 4 photodiodes monolithically integrated on common InP substrate. Diodes are available in 10, 30, 40, or 50 µm diameters and feature RF bandwidth of 10, 15, 20, or 40 GHz. With optical power handling exceeding +12dBm for each photodiode, arrays are suited for 100 Gb/s Long-Haul Pol-Mux (D)QPSK, 40 Gb/s Long-Haul (D)QPSK, and 40G/100G parallel networking.

International Radiation Detectors
Torrance, CA 90505
Jan 20, 2009 AXUV 100GX Absolute X-ray Photodiode possesses known active silicon thicknesses and 100% internal quantum efficiency, enabling absolute measurement of X-ray flux with energies 100 keV and beyond. Requiring no external voltage, detector has 10 x 10 mm square active area with room-temperature operation. Nitrided-oxide front window provides up to one Gigarad (SiO2) of radiation hardness. Photodiodes with directly-deposited, thin-metallic filters are available.

Opto Diode Corp.
Newbury Park, CA 91320
Nov 17, 2008 Blue/green enhanced silicon photodiode preamplifier, ODA-6WB-500M, operates between 400-1,100 nm, with peak spectral frequency at 940 nm. Sensitivity response is 140 V/µW (min 100), typ, at 450 nm. Transimpedance gain is 500 Mohm, with custom gains available upon request. Hermetically sealed in 6 mm² TO-39 housing, device operates in -25 to 100°C temperatures and is suited for fluorescence detection and low-light-level medical diagnostic applications.

Opto Diode Corp.
Newbury Park, CA 91320
Jul 01, 2008 Hermetically sealed in TO-39 can for integration into new or existing systems, 5 mm² Model ODA-5WB-100K offers wavelength response of 28 V/mW at 450 nm, responsivity range from 400-1,100 nm, and peak spectral response of 940 nm. Blue/green-enhanced device features storage and operating temperatures from -25 to +100°C, and is suited for industrial and biomedical applications, such as fluorescence and phosphorescence.

Discovery Semiconductors Inc.
Ewing, NJ 08628
Feb 21, 2008 Offering linearity with third order intercept point as high as 50 dBm, 40 Gbps photodiode and receiver feature differential GPPO RF outputs that enable reception of all pre-amplified and unamplified 40G modulation formats. Receiver package interfaces to commercial CDR/DEMUX modules, and products address several modulation formats: ASK, DPSK, and DQPSK. Receiver configurations include single, balanced, and dual detection schemes, with and without transimpedance amplification.

Opto Diode Corp.
Newbury Park, CA 91320
Jan 25, 2008 Packaged in hermetically sealed TO-39 can, Near-Infrared (NIR) Red-Enhanced 5 mm² ODA-5W-100K Photodiode-Preamplifier combination device offers 500 MW gain. High-sensitivity, NIR wavelength response at 940 nm is 63 V/mW (typ) and 55 V/mW (min). With operating and storage temperature ranges of -25 to +100°C, product suits applications such as medical diagnostics, test and measurement, or other tasks that require low-light (under 1 mW) level detection.

International Radiation Detectors
Torrance, CA 90505
Nov 12, 2007 Featuring 10 x 10 mm² active area, SXUV 100 Ultraviolet/Extreme Ultraviolet (UV/EUV) Photodiode has nitrided metal silicide front window that permits operation without loss of performance in high-humidity and other environmental conditions that normally require sealed packages. Photon detector is designed for long-lifetime operation in high-particle flux environments without loss of responsivity. Diodes with single active areas are available from 1-576 mm².

Vishay Intertechnology, Inc.
Malvern, PA 19355 2143
Aug 28, 2007 Qualified to AEC Q101 automotive standard, Models TEMD6010FX01 and TEMD5510FX01 utilize infrared filtering epoxy technology to match spectral sensitivity of human eye with minimal sensitivity to light beyond visible range. Photodiodes provide linear response to illuminance from 0.1 lux to 100 klux with lot-to-lot repeatability over extended operating temperature range of -40°C to +100°C. Units are RoHS compliant, free of halogens, and compatible with lead-free soldering.

Opto Diode Corp.
Newbury Park, CA 91320
Apr 03, 2007 With chip dimensions of .100 x .048 in. (per element), red enhanced ODD-3W-2 Bi-Cell Photodiode offers spectral response of 0.55 A/W at 900 nm and shunt resistance at 250 MW min. This low-noise product comes in TO-5 cans to facilitate integration and operates over -40 to +125°C range. Uses include position sensing applications, emitter alignment, test and measurement, and other industrial tasks where single axis nulling is required.

Hamamatsu
Bridgewater, NJ 08807 0910
Jul 19, 2006 Featuring 10 x 10 mm active area, S8664-1010 silicon APD (avalanche photodiode) is suited for design into analytical instruments for low-light-level measurement. Detector's spectral response range is 320-1000 nm, with peak wavelength at 600 nm. At 600 nm, quantum efficiency is approximately 85% and gain is 50. Featuring high sensitivity in visible spectrum, high gain, low noise, and low capacitance, unit comes in ceramic housing with epoxy resin window.

Goodrich Corp.
Charlotte, NC 28217
Feb 01, 2006 Designed for Geiger or Linear Mode single-photon counting at wavelengths from 0.9-1.6 microns, SU055-GM-APD-FO consists of one indium gallium arsenide/indium phosphide, near-infrared (NIR), avalanche photodiode (APD). It incorporates APD chip, thermoelectric cooler, thermistor, and optical fiber coupling optics into hermetic package. Along with quantum efficiency of over 70%, unit offers low-noise analog optical detection up to approximately 1 GHz.

Vishay Intertechnology, Inc.
Malvern, PA 19355 2143
Jul 17, 2005 Manufactured in 4.24 x 5.0 x 1.12 mm package, lead-free TEMD5xxx Family promotes response time and sensitivity through optional daylight filtering and choice of 2 radiant-sensitive areas measuring 7.5 and 5.7 mm². Models TEMD5010 and TEMD5020 provide visible-light sensitivity from 400–1,100 nm. With integrated daylight filters and peak sensitivity of 850 nm, TEMD5110 and TEMD5120 are suited for detecting IR light. All 4 devices feature 65° viewing angle.

Hamamatsu
Bridgewater, NJ 08807 0910
Mar 24, 2005 Suited for direct detection of high-energy charged particles and X-rays, S9723/S9724 silicon (Si) PIN photodiodes have 26 x 26 mm and 10 x 10 mm active areas with 2 and 1 mm uniformity, respectively. Both utilize MEMS technology and accurately conduct DE-E detection of charged particles. Hole-mounted on PCBs, 100 (±5) mm thick S9723 and 10 (±2.5) mm thick S9724 have respective typ dark currents of 2 and 0.01 nA and rise times of 80 and 100 ns.

Ophir Optronics, Inc.
Danvers, MA 01923
Dec 22, 2004 Model PD10-pJ offers energy scales from 100 nJ to 200 pJ, as well as pulse rates up to 4,000 Hz. It can make energy measurements as low as 10 pJ. Unit features spectral response of 0.19-1.1 µm, max pulse width of 50 µs, and max average power density of 5 Wcm², with damage threshold of 0.1 J/cm². It is compatible with Nova, Nova II Handheld, LaserStar, Dual Channel LaserStar, and Orion-PE Handheld smart displays.

Opto Diode Corp.
Newbury Park, CA 91320
Aug 27, 2004 Series ODD-1 silicon photodiodes feature low dark current and responsivity of 400–1,100 nm. Thermal parameters range from -55 to 100°C for storage and operating, with lead soldering temperature of 240°C. TO-18 packaging makes units suited for standard commercial products and industrial photo controls. Case-isolated packaging is available.