Intense Ltd.
Glasgow   United Kingdom
Jan 30, 2008 Offered in standard wavelength of 808 nm with power levels up to 900 W, Hermes QCW Laser Arrays degrade by less than 5% over 2 x 10⁸ shots, making them suited for rangefinding, target designation, and pumping. Units are based on Quantum Well Intermixing process, which increases quantum well band-gap of semiconductor laser in controlled manner. Available as vertically or horizontally stacked assemblies of up to 10 bars, lasers come in lensed and unlensed options.

Coherent, Inc.
Auburn, CA 95603
Jan 23, 2008 Suited for laser direct imaging and semiconductor wafer inspection, Paladin(TM) Advanced 355-8000 features mode quality of less than 1.2, low noise of less than 1% rms from 10 Hz to 2 MHz, and 80 MHz repetition rate. Diode-pumped, solid-state laser also features PermAlign(TM) optics mounting, which makes it insensitive to shock and vibration and ensures stability without need for adjustments. It features Aluminum-free Active Area pump diodes and smart power supply for hands-free operation.

Photodigm, Inc.
Richardson, TX 75081
Jun 04, 2007 Semiconductor Diode Laser Platform features quantum-well epitaxial design enabling power in excess of 500 mW, with wall plug efficiencies up to 50%. Device combines attributes of high power, diffraction-limited beam quality, low astigmatism, and single-frequency operation. Lasers can be produced at wavelengths throughout the semiconductor material spectral range, and evaluation units are available in wavelengths ranging between 920-1,100 nm.

JDSU
San Jose, CA 95131
Feb 05, 2007 With fiber based architecture, Model FCD488 continuous wave 10 and 20 mW 488 nm laser is available in free space and fiber delivered output configurations. Telecom-based, visible solid state laser features low heat dissipation, and utilizes components such as diode lasers with over 100,000 hr lifetime.

Coherent Inc., Laser Group
Santa Clara, CA 95054-1112
Oct 30, 2006 Suited for applications such as biomedicine, microelectronics, and semiconductor inspection, CUBE 445 laser employs all-semiconductor technology and can be directly modulated (analog or digital) at bandwidths of up to 125 MHz. Offering M2 of less than 1.2 and beam divergence of 0.6 mrad, it provides pointing stability of under 6 µrad/°C, and RMS noise level of 0.05%. Laser head measures 3.9 x 1.6 x 1.6 in. and dissipates 3 W of heat.

Optek Technology, Inc.
Carrollton, TX 75006-6905
May 20, 2002 VCSEL (Vertical Cavity Surface Emitting Laser) semiconductor device emits narrow beam of infrared energy from its surface. Source-emitting VCSEL components can be manufactured using traditional semiconductor techniques unlike edge-emitting devices. Features include speeds up to 1.25 Gbps and symmetrical output beam. Sensing applications include light curtains, distance measurement, and industrial position sensing.