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Computer Hardware & Peripherals -> Computer Boards & Cards -> Memory Boards & Cards


Memory Boards & Cards





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USB 2.0 Flash Media Readers promote throughput, flexibility.

SMSC
Hauppauge, NY 11788
Jul 21, 2008 Suited for consumer electronics and computing applications, USB2240 and USB2250 Hi-Speed USB 2.0 controllers offer read and write support for 24 Flash media formats and help reduce bottlenecks with throughput speeds to 35 Mb/s. Series USB2240 uses multiplexed Flash media interfaces in 36-pin QFN package, while USB2250 comes in 128-pin VTQFP and supports simultaneous access to different Flash media formats. Both fully integrated, single-chip solutions support -40 to 85°C operation.

Serial EEPROMs support multiple access modes.

STMicroelectronics
GENEVA   Switzerland
Jul 18, 2008 Operating at 1 MHz, Model M24M01-HR is able to complete 1 Mbit data transaction in 1 sec, while speeds of 256 Kbit M24256-BHR and 512 Kbit M24512-HR are ¼ and ½ sec, respectively. Compatible with I2C Fast-Mode-Plus, 2-wire serial EEPROMs support byte-write mode as well as 64, 128, and 256 byte page-write modes, random and sequential read modes, and automatic address incrementing. All models are available in variants operating from 1.8-5.5 or 2.5-5.5 V.

DDR3 Register is designed for memory modules.

Texas Instruments, Inc. (TI)
Dallas, TX 75243-4136
Jul 11, 2008 Intended for registered dual in-line memory modules (RDIMMs), SN74SSQE32882 phase locked loop (PLL) integrated DDR3 register enables system stability through constant clock and output delay over voltage and temperature variation. Supporting parity features, 28-56 bit registered buffer operates at 1.5 V VDD, supports data rates of 800-1,333 Mbps, and can support up to 72 DRAMs on one module. It features CKE power down, control mode register, and 300-670 MHz operating frequency.

Consumer FCRAM combines fast data transfer, power efficiency.

Fujitsu Microelectronics Inc.
San Jose, CA 95134 1804
Jul 09, 2008 Suited for digital consumer electronics applications, MB81EDS256545 features DDR SDRAM interface and accommodates system-in-package (SiP) designs that have small mounting spaces on circuit boards. This 256 Mbit FCRAM runs on 1.7-1.95 V and is offered in a wafer format for SiP integration or wafer-level package. With 64-bit-wide I/O bus and operating frequencies to 216 MHz, product has max data transfer rate of 3.46 GBps.

Low-Power FCRAM suits digital consumer electronics.

Fujitsu Microelectronics Europe GmbH
Dreieich-Buchschlag D-63303  Germany
Jul 07, 2008 Suited for system-in-package (SiP) designs, MB81EDS256545 features 64-bit-wide I/O, operating frequencies to 216 MHz, and low-power DDR SDRAM interface that enables data transfer capabilities to 3.46 GB/sec. This 256 Mbit Consumer FCRAM(TM) (Fast Cycle Random Access Memory), suited for processing image/video data and other data types that demand high bandwidth, has 1.7-1.95 V supply voltage, 300 mA max operating current (burst read), and 20 µA max power down current.

Server Solution turns Flash into DRAM-class memory.

Virident Systems Inc.
California, CA 95035-5444
Jul 03, 2008 Compatible with existing infrastructure, GreenGateway(TM) enables Internet data centers to keep pace with performance and energy demands. It turns compute-centric servers into large-memory, data-centric servers that offer random access, low-power, non-volatile flash memory to handle Internet search, social networking, data analytics, and content distribution applications. Resulting DRAM-class read performance with larger memories improves server efficiency and application throughput.

Memory Module is designed for Mac Pro desktop systems.

Corsair Memory
Fremont, CA 94538
Jul 02, 2008 Available in 4 GB (2 x 2 GB modules) DIMM kits, Corsair Mac Memory kits provide fully-buffered 800 MHz solutions. Utilizing Mac Pro-specific heat sinks and performance ICs, memory modules help maintain high performance potential of Mac Pro desktop platforms.

OTP Memory Blocks have field-programmable architecture.

austriamicrosystems AG
Premstatten   Austria
Jun 20, 2008 Suited for company's 0.35 µm process family, polyfuse-based OTP (one-time-programmable) memory cell PPROM facilitates trimming of analog and digital parameters without additional masks. Memory cells, offered in 2 fixed sizes of 4 x 8 bit and 16 x 8 bit, allow storage of analog and digital parameters and come with parallel interface. PPTRIM blocks are available in 8-, 16-, 32-, 48-, and 64-bit sizes and offer 3-wire interface and auto-load at power-on reset.

Solid State Storage Controller boosts PC, MID performance.

Marvell Semiconductor Inc.
Santa Clara, CA 95054
Jun 16, 2008 In notebook and desktop PCs with disk drives, 88NV8120 PCIe-based NAND flash controller promotes performance by enabling solid state storage subsystem to accelerate storage and loading of OS and applications software. Solution is also suited for diskless sub-notebooks and Mobile Internet Devices (MIDs), promoting optimal system performance by intelligently balancing distribution of data between flash subsystem and hard drive.

DDR3 Memory Kit offers overclocked speed of 2,000 MHz.

Corsair Memory
Fremont, CA 94538
Jun 05, 2008 Featuring IC overclocking capability and DHX cooling, 4 GB DOMINATOR DDR3 memory kit contributes to accelerated frame rates, loading times, and task switching in desktop platforms. DHX technology employs quad-layer heat sink design to optimize memory performance by maximizing thermal dissipation. Heat is removed via 2 paths: leads of BGA chips into PCB (conductive cooling), and back of BGA packages into custom-designed extruded aluminum heat sinks (convective cooling).

Memory Controller and PHY IP fully support DDR3 DIMMs.

Denali Software Inc.
Palo Alto, CA 94301
Jun 05, 2008 Databahn(TM) DRAM memory controller and hard PHY IP offer full DDR3 dual in-line memory module (DIMM) support. They are designed for bulk-memory and caching applications, including networking, storage, and personal computing systems using DDR3 modules at data rates up to 12.8 GB/sec per DIMM. Utilizing fly-by architecture, products require read and write leveling and gate training capabilities to be directly implemented and managed in DRAM controller and PHY.

Serial F-RAM Memory meets AEC-Q100 automotive standards.

Serial F-RAM Memory meets AEC-Q100 automotive standards.

Ramtron International Corp.
Colorado Springs, CO 80921
May 22, 2008 Operating over Grade 3 automotive temperature range of -40 to +85°C, 64 Kb Model FM24CL64 combines NoDelay(TM) writes, virtually unlimited endurance of 1 trillion writes, 45 years of data retention, and I2C interface, enabling data collection/storage at max bus speed in intelligent infotainment applications. Available in green, 8-pin SOIC package, nonvolatile device operates at 3 V and draws 75 µA for reads and writes at 100 kHz.

Compactflash Card offers 32 GB capacity.

Compactflash Card offers 32 GB capacity.

Advanced Media Inc.
Diamond Bar, CA 91765
May 15, 2008 Conforming to CompactFlash Association Standard, Ridata 233x Lightning Series provides dual-channel data throughput for 233x reading speed and 80x writing speed. Card supports 8- or 16-bit host transfers with any host speed using IORDY. It includes automatic power management feature, embedded Error Correction Code, and forward and backward functionality. Product is compatible with host ATA disk I/O BIOS, DOS, and Windows file system, utilities, and application software.

Serial EEPROMs utilize single I/O bus.

Serial EEPROMs utilize single I/O bus.

Microchip Technology, Inc.
Chandler, AZ 85224 6199
May 14, 2008 Based on UNI/O(TM) memory-device protocol, 11XX010, 11XX020, 11XX040, 11XX080, and 11XX160 are 1, 2, 4, 8, and 16 Kbit EEPROMs that can track host MCU serial data rates from 10-100 kHz. Products come in 3-pin SOT-23 packages, which facilitates evaluation because their pin-outs overlay any standard IP2PC(TM) or SPI EEPROM socket. Additional features include status registers; software write protection for ¼, ½, or full array; noise filtering; and ESD protection.

TFT-LCD VCOM/Gamma Buffer offers fast table switching.

Maxim Integrated Products
Sunnyvale, CA 94086
May 14, 2008 Composed of 10 independent gamma channels and one VCOM channel, DS3510 is integrated gamma/VCOM buffer with on-chip EEPROM that supports 4 gamma curves and rapid switching among curves. Each channel includes 4 bytes of EEPROM, 2 latches, one 8-bit DAC, and one buffer amplifier. Features enable pin-controllable, gamma/VCOM table switching in less than 300 ns. Each table implements different gamma curve, which lets TFT-LCD designers compensate for range of conditions.

Event Data Recorder features 32 Kb F-RAM for data storage.

Event Data Recorder features 32 Kb F-RAM for data storage.

Ramtron International Corp.
Colorado Springs, CO 80921
Apr 18, 2008 Supplied in RoHS-compliant 44-pin QFP, FM6124 provides single-chip solution for digital event monitoring. It continuously monitors state changes, stores them in ferroelectric random access memory (F-RAM), and alerts system to changes. Designed for use in industrial control, medical, and metering markets, solution stores up to 4,000 event records and incorporates real-time clock with calendar, 12 individually configurable digital inputs, and 100 kbps I²C interface.

Memory Kits are available in up to 8 GB capacities.

Kingston Technology Co., Inc.
Fountain Valley, CA 92708
Apr 16, 2008 Designed and validated for Apple Mac Pro workstations and Xserve server systems, 800 MHz DDR2 fully-buffered dual-inline memory kits are offered in 2, 4, and 8 GB capacities. They deliver up to 25.6 GB/sec bandwidth with 4 memory channels active and match bandwidth needs of Quad-Core Xeon processors. Enabling flexible upgrade path, 2 and 4 GB versions allow for future RAM expansion.

Non-Volatile F-RAM features high-speed SPI.

Non-Volatile F-RAM features high-speed SPI.

Ramtron International Corp.
Colorado Springs, CO 80921
Apr 14, 2008 Housed in 8-lead TDFN package, 2 Mb Model FM25H20 is organized as 256 K x 8-bit nonvolatile memory that reads and writes at bus speed up to 40 MHz, with essentially unlimited endurance and 10-year data retention. Hardware and software write protection feature prevents inadvertent writes and data corruption. Operating from 2.7-3.6 V over industrial temperature range of -40 to +85°C, device draws less than 10 mA for reads/writes at 40 MHz, 80 µA in standby, and 3 µA in sleep mode.

Buffer Memory Node features XMC form factor.

VMETRO, Inc
Houston, TX 77077
Apr 09, 2008 With support for Serial RapidIO® or PCI Express®, Model MM-6171 is rugged COTS buffer memory node providing 2-4 GB of high speed buffer memory. Unit includes DMA engine and Serial RapidIO x4 interface that runs at 3.125 GHz with corner-turning, while x8 bus interface runs at 2.5 GHz for PCI Express. It is suited for embedded applications such as radar signal processing, signal intelligence, and image acquisition that require buffering capability with FPGA memory controller.

SPD EEPROMs support DDR2 and DDR3 DIMMs.

SPD EEPROMs support DDR2 and DDR3 DIMMs.

Microchip Technology, Inc.
Chandler, AZ 85224 6199
Mar 26, 2008 With respective operating voltage ranges of 1.7-5.5 V, 2.5-5.5 V, and 1.5-3.6 V, Serial Presence Detect (SPD) EEPROM devices 34AA02, 34LC02, and 34VL02 are suited for PCs that utilize low-voltage battery designs. Products are designed to meet JEDEC standard for DDR1, DDR2, and DDR3 modules and are offered in 8-pin TSSOP, 2 x 3 mm TDFN and MSOP packages, as well as 6-pin SOT-23 package.




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