Patriot Memory
Fremont, CA 94538
Nov 02, 2009 Models PSF32GSDHC10, PSF16GSDHC10, and PSF8GSDHC10 of LX Series Class 10 SDHC Flash memory cards capture high-speed, sequential images. They also feature high-speed transfer rate, which allows video recording in high resolution, optimizing use of digital photography and video equipment. Capacity of each is 8 GB.

ARM Ltd.,
Sunnyvale, CA 94085
Oct 29, 2009 Balancing low latency with guaranteed bandwidth, AMBA® Network Interconnect (NIC-301) with QoS delivers rich media experience from ARM Cortex(TM) CPUs, Mali(TM) GPUs, and Video processors. AMBA Dynamic Memory Controller (DMC-342) supports LPDDR2 memories and manages memory power modes to reduce system level power consumption. AMBA Verification and Performance Exploration (VPE-301) tool enables creation of what-if scenarios to explore performance of subsystems.

Micron Technology Inc.
Boise, ID 83707 0006
Oct 29, 2009 Leveraging 34 nm NAND process, Multilevel cell 32 GB MLC Enterprise NAND devices achieve 30,000 write cycles, while 16 GB SLC Enterprise NAND devices achieve 300,000 write cycles. Designed to maximize data transfer rates, Flash-based, solid state devices can be configured into multi-die, single packages supporting high densities.

Sandisk Corp.
Sunnyvale, CA 94089
Oct 27, 2009 SanDisk Extreme® Pro(TM) CompactFlash® memory cards offer capacities from 16-64 GB and feature SanDisk® Power Core Controller(TM) that enables read and write speeds up to 90 MB/sec over UDMA-6 bus. Integrated firmware algorithms and 42-bit ECC engine maintain data integrity while extending card endurance through optimized wear leveling. Applications include any camera, card reader, or other device that supports CompactFlash cards.

Stancom
Epalinges   Switzerland
Oct 27, 2009 Dual SIM Holder Platinum v7.0 enables installation of 2 SIM cards in one mobile phone. Designed with flexible PCB technologiesit incorporates MCU Ultra thin chip and can be used in mobile phones with very thin SIM slot. It supports 3G - UMTS, WCDMA, HSDPA - networks and had embedded encrypted SMS function.

Cypress Semiconductor Corp.
San Jose, CA 95134
Oct 27, 2009 Offered in multiple configurations, 1 Mbit Serial non-volatile Static Random Access Memory (nvSRAM) series has SPI interface and operating frequencies up to 40 MHz. One member also integrates RTC. With access times as low as 20 ns, parallel nvSRAMs offer infinite read, write, and recall cycles and up to 20 years of data retention. These 4 and 8 Mbit nvSRAMs integrate programmable alarm function, watchdog timer, and RTC that enables time-stamping of critical data for back-up.

Cypress Semiconductor Corp.
San Jose, CA 95134
Oct 27, 2009 Leveraging 65 nm process technology, 144-Mbit CY7C16xxKV18 QDRII, QDRII+, DDRII, and DDRII+ memories use Phase Locked Loop and provide total data rate of 80 Gbps. QDRII+ and DDRII+ devices have On-Die Termination, which optimizes signal integrity and saves board space by eliminating external termination resistors. Available in 165 FBGA packages, memories are suited for Internet core and edge routers, fixed and modular Ethernet switches, medical imaging, and military signal processing systems.

Toshiba America Electronic Components (TAEC)
Irvine, CA 92618-1811
Oct 08, 2009 Compliant with SD Memory Card Standard Version 3.00, UHS104, SDXC Memory Card offers 64 GB capacity while SDHC Memory Cards come in 32 and 16 GB capacities. All provide max write speed of 35 MBps and max read speed of 60 MBps. With 2.7-3.6 V power supply, cards consume 400 mA max and meet needs of consumer electronics applications such as digital still cameras and digital camcorders that require high bandwidth data communication.

WinSystems, Inc.
Arlington, TX 76011
Sep 22, 2009 Dual-channel CompactFlash cards, available in 5 storage sizes from 1-16 GB, tolerate shock, vibration, humidity, altitude up to 80,000 ft, and temperatures from -40 to +85°C. Ultra DMA burst transfer rate is 66 Mbps to and from card, while sustained sequential writes are 16 Mbps and reads are 37 Mbps. Unit features 32-bit RISC controller with error checking and flash management utilities. Flash memory power-down logic/write protection prevents data corruption during power loss.

Renesas Technology America, Inc.
San Jose, CA 95134-1368
Sep 18, 2009 Respectively capable of 533 and 333 MHz max operating speeds, QDRII+/DDRII+ and QDRII/DDRII SRAM support high-speed processing for packet look-up and packet buffer applications in high-end routers and switchers that support 10G, 40G, and beyond multi-layer communication systems. Both 72-Mbit Quad Data Rate II+ (QDR(TM) II+) and Double Data Rate II+ (DDRII+) SRAM products are manufactured with 45 nm fabrication process. Package is 165-pin plastic FBGA with 15 x 17 mm size.

Micron Technology Inc.
Boise, ID 83707 0006
Aug 18, 2009 Manufactured using 1.35 V, 2 Gb, 50 nm DDR3 memory chips, 16 GB DDR3 load-reduced, dual-inline memory module (LRDIMM) enables servers to support higher data frequencies while increasing memory capacity. It uses Inphi's isolation memory buffer chip in place of register, reducing bus load when transferring data between memory and processor. Typical server system that can accommodate up to 3 quad-rank 16 GB RDIMMS per processor can support up to 9 quad-rank 16 GB LRDIMMS per processor.

Delkin Devices, Inc.
Poway, CA 92064
Aug 17, 2009 Capable of write speeds up to 16 Mb/sec and read speeds up to 17 Mb/sec, industrial-grade microSD(TM) cards operate in extreme temperatures ranging from -40 to 85°C. They are built with SLC NAND Flash and are available in 128 Mb to 2 Gb capacities. Providing shock and vibration stability, cards are suited for industrial and military applications, including industrial automation, mobile telecommunications, transportation, healthcare, GPS navigation, and aviation.

Ramtron International Corp.
Colorado Springs, CO 80921
Aug 06, 2009 Supplied in RoHS-compliant, 28-pin SOIC package, FM28V020 features NoDelay(TM) writes and unlimited read/write cycles. It operates from 2.0-3.6 V, accesses page mode operation up to 40 MHz, and may be used as drop-in replacement for battery-backed SRAM. Able to operate over -40 to +85°C range, this 256 Kb (32K x 8) nonvolatile ferroelectric random access memory (FRAM) retains data after power is removed and offers extended data retention of over 10+ years.

Microchip Technology, Inc.
Chandler, AZ 85224 6199
Aug 05, 2009 Model MRF24J40MB adds +20 dBm transmit power via integrated power amp and -102 dBm receive sensitivity via integrated Low Noise Amplifier (LNA) to IEEE 802.15.4-compliant transceiver, PCB antenna, and discrete matching circuitry. On software side, certified ZigBee PRO protocol stack provides another option for IEEE 802.15.4-based wireless networks using 16-bit PIC® MCUs. Combination of ZigBee PRO stack and MRF24J40 forms ZigBee PRO Compliant Platform certified by ZigBee Alliance.

Ramtron International Corp.
Colorado Springs, CO 80921
Jul 23, 2009 Respectively featuring 2-wire (I²C) interface and serial peripheral interface (SPI), FM24V02 and FM25V02 operate from 2.0-3.6 V and come in RoHS-compliant, 8-pin SOIC package. Nonvolatile products offer NoDelay(TM) writes and read-only Device ID, which allows host to determine manufacturer, product density, and product revision. Power consumption rates for FM24V02, which supports up to 100-trillion read/write cycles, is 150 µA at 100 kHz, 90 µA in standby, and 5 µA in sleep mode.

Ramtron International Corp.
Colorado Springs, CO 80921
Jul 20, 2009 Housed in 48-pin FBGA package, 8 Mb Model FM23MLD16 is organized as 512 K x 16 nonvolatile memory, accessed within industry standard parallel interface. Access time is 60 ns and cycle time is 115 ns. Device reads and writes at bus speeds for NoDelay(TM) writes with endurance of 100 trillion writes and 10-year data retention. Operating from 2.7-3.6 V, surface-mount solution features high-speed page mode that enables 8-byte burst read/write operations at up to 33 MHz.

STMicroelectronics
GENEVA   Switzerland
Jul 10, 2009 Non-volatile memories M95512 and M24512 respectively feature 20 MHz SPI port and I²C interface supporting 400 kHz Fast-mode or 1 MHz Fast-mode Plus. Supplied in 8-pin Micro Leadframe Package (MLP), their design is compatible with memories of lower density, enabling efficient upgrades. Built-in byte-mode erasing capability facilitates parameter update, while 128-byte page write, together with 5 ms write time, accelerates programming of assembled boards on production line.

Ramtron International Corp.
Colorado Springs, CO 80921
Jul 07, 2009 Supporting legacy timing at 100 and 400 kHz, FM24CL32 features 32 Kb nonvolatile memory and 2.7-3.6 V operation in 8-pin SOIC package that uses two-wire (I²C) protocol. It provides data retention for up to 45 yr and operates over industrial temperature range of -40 to +85°C in low voltage, with active current of 70 µA (typical at 100 kHz) and 12 µA current in standby. Serial nonvolatile RAM is suited for data collection applications where frequent or rapid writes are required.

Yamaichi Electronics U.S.A. Inc.
San Jose, CA 95134
Jul 07, 2009 With height of 2.8 mm, FPS009-2409-0, push/push SD/MMC card connector is designed for SMT mounting on top side of PCB assembly. It offers smooth card insertion and extraction via push-in/push-out mechanism with defined ejection, soft lock mechanism for SD card, 2-point contacts to protect against electrical interruptions as well as automatic card detector and write protection switch.

TEAC America, Inc.
Montebello, CA 90640
Jun 29, 2009 Stand-alone 1x3, 1x7, and 1x11 USB Flash Duplicators can copy, compare, and erase up to 3, 7, or 11 USB flash drives simultaneously, respectively, to facilitate propagation and distribution of data. To facilitate operation, all functions are selectable via duplicator controller with LCD. Asynchronous duplication eliminates waiting and interruption concerns, as each channel can independently load, unload, and copy.