Plasma Decapsulation System uses CO2 to remove fillers.
September 22, 2004 -
Able to process wafers as large as 200 mm, FA-2000 Fillerblast(TM) system is suited for decapsulation and depassivation of packaged devices with metallization in ICs and organic substrates in packaging. Reactive ion etcher eliminates use of wet acids. Manifold forms dry ice, which acts as fine abrasive effective in removing filler buildup, while plasma maintains constant etch rate for efficient removal of molding material. Etch rates for many compounds are more than 1 mil/hr.
(Archive News Story - Products mentioned in this Archive News Story may or may not be available from the manufacturer.)
Original Press release
BSET Plasmas
1011Detroit Ave., Ste. A
Concord, CA, 94518
USA
FA-2000 Plasma Decapsulation System
Anatech LTD introduces its FA-2000 reactive ion etcher for decapsulation and depassivation of packaged devices. New device technologies include metallization in integrated circuits and organic substrates in packaging. The FA-2000 is a new solution for decapsulation of these special devices without the disadvantages of use of wet acids, including exposure of personnel to acid handling and disposal, corrosive residue on devices, and over-etching without end point detection.
Anatech recommends its FA-2000 reactive ion etcher for decapsulation and depassivation of packaged devices. A typical method of decapsulation is use of fuming nitric or sulfuric acid. Acid decapsulation systems can do an acceptable job for some devices, however, disadvantages include exposure of personnel to acid handling, high cost of ownership and acid disposal, corrosive residue on devices, and over-etching with no ease of end point detection.
New device technologies include metallization in integrated circuits and organic substrates in packaging. The FA-2000 is a new solution for decapsulation of these special devices.
A disadvantage of plasma decapsulation technology has been slow removal of epoxy and plastic molding materials. The cause of this problem is the build up of filler materials, such as silicon dioxide and quartz based fillers, which do not etch as quickly as organic components in the molding material. The result, if process is not interrupted with tedious manual brushing, is failure to decapsulate the device. An abandoned solution was the use of N2 gas to "blow" away the filler buildup. New molding materials in advanced packages and the use of hard epoxies made this approach ineffective. Process times with previous systems could take more than 48 hours !!!
Anatech's Fillerblast(TM) is the solution. Use of CO2 instead of N2 significantly enhances removal of fillers. A special manifold forms dry ice, which acts as a fine abrasive that is very effective in removing filler buildup. The plasma maintains a constant etch rate, which makes for a much more efficient removal of the molding material. The FA-2000 Fillerblast system also allows for an automatic change over to less aggressive CO2 blasts, or even extra gentle N2 blasts, to help preserve wire bonding. With the FA2000 etch rates for many compounds are more than 1 mil per hour.
After decapsulation of the device, the FA-2000 can also remove passivation or interdielectric layers. Anisotropic etching delivers aspect ratios needed to preserve functionality and operating condition of the device being treated. The system is capable of using any non corrosive gas and uses mass flow controllers tied into our versatile controller for easy, precise, gas mixing. Precise gas mixing is important to etch selectivity. FA-2000 systems can process wafers as large as 200 mm.
|
|
|
|
See related product stories
|
|
|
Newsletters |
Industry
Market Trends
Has Got It |
- Latest developments
- Trends
- Best practices
- Opinions & Commentary
|
 |
Get Ahead.
Get IMT.
Subscribe Free Today
Subscribe View
Sample |
Your Gateway to a Fast
Changing World
Product News Alerts |
 |
Receive similar stories and other customized
news to keep you in the know on the products shaping
industry. |
Subscribe Free Today
Subscribe View
Sample |
|
|
|
|
|
|
|
|
|
| 
