Toshiba Introduces New High Gain, High Power X-Band GaN Hybrid IC
Supporting AESA, PESA Radar Applications, GaN Hybrid IC Optimized for High Gain, High Power
MONTREAL, - 2012 INTERNATIONAL MICROWAVE SYMPOSIUM, Booth #2710 - Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., today announced the introduction of its new gallium nitride (GaN) hybrid IC (HIC), which is optimized for high gain and power. Available in small hermetically-sealed packages, the gain-enhanced HIC is targeted to transmitter and receiver modules (TRMs) used in radar applications - such as active electronically scanned array (AESA) and passive electronically scanned array (PESA). Toshiba will be exhibiting the new HIC in booth #2710 at the 2012 IEEE MTT-S International Microwave Symposium from June 19 through 21 in Montreal, Quebec, Canada.
The new X-Band hybrid IC, the TGM9398-25, operates in the 9.3 to 9.8 GHz(1) range, and has output power at 1dB of 25W, or 44.0dBm (typ.), linear gain of 25dB (typ.) and power added efficiency of 35 percent. Toshiba commercially launched the 50W discrete GaN internally-matched HEMT for the band, the TGI8596-50, in 2008 and the TGI0910-50, in 2010. The new device is in a package that is footprint-compatible with the existing discrete internally-matched GaN HEMT, to support easy upgrades for legacy designs.
"The high power density of GaN technology makes this possible," said Homayoun Ghani, business development manager, microwave devices, for TAEC's Discrete Business Unit. "With the energy-saving features associated with higher gain, this hybrid IC will help our customers design more advanced telecommunication systems."
Product Characteristics TGM9398-25
Output Power, Po(typ.) 25W
Liner Gain, GL(typ.) 25dB
Power Added Efficiency 35%
Pricing and Availability
Samples of Toshiba's GaN hybrid IC will be available in Q4 2012. For datasheets and samples, please contact your Toshiba representative.
Toshiba Microwave Product Overview
Toshiba is a leading supplier of high-performance gallium nitride (GaN) and gallium arsenide (GaAs) microwave devices that operate in C, X, Ku and Ka frequency bands. Featuring high power added efficiency and high gain, these products are used in wireless applications such as RADAR systems, SATCOM, microwave link, medical equipment, and industrial applications.
About Toshiba Corp. and TAEC
Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, VARs, distributors and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, solid state drives (SSDs), hard disk drives (HDDs), discrete devices, advanced materials, medical tubes, custom SoCs/ASICs, imaging products, microcontrollers and wireless components that make possible today's leading smartphones, tablets, MP3 players, cameras, medical devices, automotive electronics, enterprise solutions and more.
Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer and the world's third largest semiconductor manufacturer (Gartner, 2011 Worldwide Semiconductor Revenue, March, 2012). Toshiba Corporation was founded in 1875 and today has over 554 subsidiaries and affiliates, with 210,000 employees worldwide. Visit Toshiba's web site at http://www.toshiba.co.jp/index.htm.
1: For purposes of measuring frequency in this context, one Gigahertz (GHz) = 1,000,000,000 cycles per second.
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