Power MOSFET suits communication infrastructure equipment.

Press Release Summary:

Used for primary switching applications in insulated on-board dc-dc converters and switching regulators, Model TPCA8022-H combines Ultra-High Speed UMOS-III process technology with SOP Advance packaging for high current rating and power dissipation. Features include drain-source voltage of 100 V, drain current dc of 22 A, drain current pulsed of 66 A, and N-channel single circuit configuration.

Original Press Release:

Toshiba Adds 100V Power MOSFET for Primary Switching of Insulated On-Board DC-DC Converters

Addition to SOP Advance Power MOSFET Family is Targeted for Use in Communication Equipment That Requires Insulated IBC IRVINE, Calif., Aug. 8 // -- Toshiba America Electronic Components, Inc., (TAEC)* today announced a new 100V Power MOSFET, designated TPCA8022-H, for primary switching applications in insulated on-board DC-DC converters and switching regulators. Developed by Toshiba Corp., the device contributes to higher power efficiency and system miniaturization, and is targeted for use in communication infrastructure equipment that requires insulated intermediate bus converters (IBCs). Demand for power supply devices for communication infrastructure equipment has grown due to the spread of high-speed Internet, wireless Internet communication, and Voice over IP. Microprocessors and memory used in such infrastructure equipment must be distributed and multi-staged. As a result, designers have adopted insulated IBC and non-insulated Point of Load (POL) to achieve higher response, higher efficiency, and miniaturization of the equipment while contributing to cost reduction. "This newest member of our SOP Advance family of MOSFETs has been developed to address the needs of communication equipment designers by providing fast switching speed, reduced gate charge, low ON-resistance, a small footprint and excellent power efficiency," said Jay Heinecke, business development director, Discrete Business Unit, for TAEC. The TPCA8022-H is an enhanced, pin-compatible upgrade for Toshiba's earlier TPCA8006-H. It combines Toshiba Ultra-High Speed UMOS-III process technology with SOP Advance low-profile packaging to achieve a high current rating and improve power dissipation. Toshiba SOP Advance packaging is approximately 37 percent thinner than standard SOP-8 and saves space on printed circuit boards. Features o Drain-source withstand voltage (VDSS=100V) suitable for primary switching devices for 48V input bus converters o Realized (low) excellent trade-off between ON-resistance and Qg by adopting ultra high-speed U-MOSIII design o Low drain-source ON-resistance o Low Gate-switch charge o Guaranteed avalanche resistivity characteristics o ZENER DIODE Protection is built-in between Gate and Source o SOP Advance Package contributes to miniaturization of equipment

Technical Specifications Part Number TPCA8022-H Circuit configuration N-channel Single Process Technology Ultra High Speed U-MOSIII Drain Source Voltage (VDSS) 100V (max.) Drain Current DC ( ID) 22A Drain Current Pulsed (IDP) 66A ON-Resistance (RDSON) 17milliohm (typ.) @VGS-10V, Ta-25 degrees C Gate Switch Charge (QSW(1)) QSW-14nC (typ.) @VGS-10V, VDS-80V, Ta-25 degrees C

Availability Samples of Toshiba's TPCA8022-H MOSFET are scheduled to be available in August 2006, priced at $0.75 each. Toshiba's Discrete Products Since 1986, Toshiba Corp. has ranked as the top discrete supplier on a worldwide basis, based on annual revenue from international shipments of total discrete products. According to the most recent report for 2005 from market research firm Gartner Dataquest (San Jose, CA), Toshiba remained the top discrete semiconductor supplier and moved into fourth place in overall semiconductor sales. (Source: "2005 Worldwide Semiconductor Market Share Report," Gartner, released April 2006). More specifically, Toshiba is a leading supplier in a number of discrete product categories, including power transistors, rectifiers and thyristors, LMOS logic, CMOS logic, optoelectronics, small signal diodes and transistors. The company's discrete devices are designed to meet the growing demand for high-performance and lower voltages in today's wireless telecommunications and consumer electronics applications, while emphasizing its strength in the automotive and industrial markets. *About TAEC Combining quality and flexibility with design engineering expertise, TAEC brings a breadth of advanced, next-generation technologies to its customers. This broad offering includes memory and flash memory-based storage solutions, a broad range of discrete devices, displays, medical tubes, ASICs, custom SOCs, microprocessors, microcontrollers and wireless components for the computing, wireless, networking, automotive and digital consumer markets. TAEC is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corp. (Toshiba), Japan's largest semiconductor manufacturer and the world's fourth largest semiconductor manufacturer. In more than 130 years of operation, Toshiba has recorded numerous firsts and made many valuable contributions to technology and society. For additional company and product information, please visit TAEC's website at chips.toshiba.com. For technical inquiries, please e-mail Tech.Questions@taec.toshiba.com. Reader inquiries please publish: Tech.Questions@taec.toshiba.com. (1) Gate switch charge (QSW): QSW data indicates switching characteristics more precisely than Qg data for MOSFETs targeted for high-speed switching Source: Toshiba America Electronic Components, Inc. CONTACT: Poloi Lin Toshiba America Electronic Components, Inc., +1-949-623-3098, poloi.lin@taec.toshiba.com Web site: http://www.chips.toshiba.com/

All Topics