New Evaluation Kit Helps Designers with High Power Amplifier Designs

Press Release Summary:

Integra Technologies, Inc. recently released Gallium Nitride on Silicon Carbide, GaN-on-SiC, HEMT transistor evaluation kits. The kits are intended to help designers with their evaluations regarding high power amplifier designs. Included in each kit is a designer’s transistor model of choice, a second spare device and a test fixture with one transistor fully mounted and tested.


Original Press Release:

GaN-on-SiC Transistor Evaluation Kits Help Verify Performance in R Systems

EL SEGUNDO, California (USA)–October 15, 2018–Integra Technologies(www.integratech.com), a leading designer and supplier of high-power RF Power Transistors and RF Power Modules, offers Gallium Nitride on Silicon Carbide(GaN-on-SiC)HEMT transistor evaluation kits to designers evaluating this technology for their high power amplifier designs.

Each kit is customized to include a designer’s transistor model of choice (partially or fully-matched options are available) and includes a test fixture with one transistor fully mounted and tested, and a second spare device. Full RF test results, as tested under key conditions by the Integra technical support team, are also provided as a reference guideline.

Learn more by downloading the Application Note“ Handling and Adjustment of Integra Technologies GaN-on-SiC HEMT Evaluation Kits” at www.integratech.com/handling-and-adjustment-of-integra-technologies-gan-on-sic-hemt-transistor-evaluation-kits. In this application note, Integra recommends comparing your measured data with their RF data for the serial number installed in the test fixture and reconciling any discrepancies before removing or changing the transistor.

 

To order an evaluation kit visit:

https://www.integratech.com/get-a-quote-on-rf-power-devices/.These kits can be borrowed free for 30 days or be purchased to own.

 

About Integra Technologies, Inc.–www.integratech.com

Integra is a leading designer, manufacturer, innovator, and global supplier of high-power RF and microwave transistors and power amplifiers. They have a demonstrable heritage as a provider of dependable standard and custom solutions for low to high volume radar, avionics, defense, communications, EW, and ISM programs. The technologies that Integra fabricates with include GaN/SiC HEMT, Si-LDMOS, Si-VDMOS, and Si-Bipolar semiconductor approaches proven in their own fab and with redundant partners.

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