NAND Flash Memory supports configurable SLC, MLC areas.
Press Release Summary:
Configurable by end-user, mobileLBA-NAND series supports single-level cell (SLC) and multi-level cell (MLC) areas on same chip for storage of applications and data in mobile phones. Embedded solutions are offered in capacities from 2-32 Gb, each with logical block address access controller and support for standard NAND flash interface. While 2, 4, and 8 Gb versions can be allocated as SLC up to their full capacity, 16 and 32 Gb versions support up to 8 Gb of SLC.
Original Press Release:
New Toshiba mobileLBA-NAND Memory Chips for Mobile Phones Support Both SLC and MLC Memory Areas
Customer-configurable High Density NAND Flash Memory with Standard NAND Interface Supports Single-Level Cell and Multi-Level Cell Areas on Same Memory Chip
TOKYO and IRVINE, Calif., June 21 -- Toshiba Corp. (Toshiba) today announced with Toshiba America Electronic Components, Inc. (TAEC)*, its subsidiary in the Americas, a new series of embedded NAND Flash memories for mobile phones offering both a configurable single-level cell (SLC) memory area and a multi-level cell (MLC) memory area, allowing applications and data to be stored on the same chip. This development allows cell phone manufacturers that have been using SLC NAND with a standard NAND interface in multi-chip packages (MCPs) to easily take advantage of the lower cost and higher density advantages of MLC NAND while optimizing NAND performance to meet their requirements.
The five memories in the mobileLBA-NAND series range in capacity from 2- to 32-gigabits(1) (Gb). The 2Gb, 4Gb and 8Gb versions can be allocated as SLC up to their full capacity, while the 16Gb and 32Gb versions can support up to 8Gb of SLC, offering manufacturers greater flexibility in allocating memory in their products. Samples of mobileLBA-NAND packaged in MCPs will be available from August 2007.
Alongside a logical block address access (LBA) controller, all of the new mobileLBA-NAND memories integrate a unique control function able to address both SLC and MLC. SLC supports high-speed data read and write, and is suited to storing programs for mobile phone functions. In the new devices, manufacturers are free to allocate part of the memory to SLC, with the MLC area reserved for storing data, such a digital photographs and video and music files. This design will allow developers to reduce the number of chips in a product's system, saving space and contributing to higher integration and multi-functionality.
The new memories also support a standard NAND flash interface, which means they can easily be introduced into current generations of products. The LBA controller carries out essential functions, such as writing block management and error code correction (ECC), which minimizes any changes in the host controller specification. As a result, the new memories offer product developers immediately applicable solutions for reducing development time and costs for new and upgraded products.
More and more mobile phones integrate a high-resolution camera and audio player. They rely on high-density memory to store images and music, as well to store boot program and log data for the mobile phone system. Toshiba's new memories meet these demands in a novel solution that also reduces development burdens on manufacturers.
The new NAND flash memories will be shipped primarily in MCPs with a Fine Pitch Ball Grid Array (FBGA).
Outline of New Products
Product Name Memory Density
mobileLBA-NAND 2Gb
4Gb
(High-density NAND flash memory with logical 8Gb
block address access method for mobile phones) 16Gb
Key Features
1. Manufacturers can, on the same chip, define an SLC memory density best suited to store high speed write and read of application programs, separately from an MLC area optimized for high density memory storage in each memory cell array. The SLC memory area can be set from zero to 8Gb at maximum (for the 8Gb chip and above) by the manufacturer.
2. The new memories are fully compliant with the standard NAND flash interface, facilitating easy introduction into current products.
3. The LBA controller controls such essential functions as writing block management and ECC, minimizing any changes to the host controller specification and allowing manufacturers to quickly and cost-effectively market new and upgraded products.
Key Specifications
Interface Standard NAND type flash memory interface
(using logical block address access method)
Power Supply 1.7 to 1.95V (interface)
Voltage 1.7 to 1.95V or 2.6 to 3.3V (memory core)
NAND Flash Background
Toshiba was a principal innovator of NAND- and NOR-type Flash memory technology in the 1980's and maintains leadership in Flash technology today, with a complete line of removable and embedded NAND solutions to meet various application requirements. NAND Flash has become one of the leading technologies for solid-state storage applications because of its high-speed programming capability, high-speed erasing, and low cost. The sequential nature (serial access) of NAND-based Flash memory provides notable advantages for these block-oriented data storage applications. Toshiba's NAND Flash memory products are optimized for general solid-state storage, image file storage and audio for applications such as solid-state disk drives, digital cameras, audio appliances, set-top boxes and industrial storage.
*About TAEC
Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, distributions and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, discrete devices, displays, medical tubes, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers and wireless components that make possible today's leading cell phones, MP3 players, cameras, medical devices, automotive electronics and more.
Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer and the world's fourth largest semiconductor manufacturer (iSuppli, World's Top Semiconductor Supplier Rankings in 2006). For additional company and product information, please visit http://www.toshiba.com/taec/.
Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications. In developing designs, please ensure that Toshiba products are used within specified operating ranges as set forth in the most recent Toshiba product specifications and the information set forth in Toshiba's "Handling Guide for Semiconductor Devices," or "Toshiba Semiconductor Reliability Handbook." This information is available at www.chips.toshiba.com/, or from your TAEC representative.
All trademarks and tradenames held within are the properties of their respective holders.
(1) When used herein in relation to memory density, gigabit and/or Gb means 1,024x1,024x1,024 = 1,073,741,824 bits. Usable capacity may be less. For details, please refer to specifications.
Reader inquiries:
Tech.Questions@taec.toshiba.com.
CONTACT: Jan Johnson of MultiPath Communications, +1-714-633-4008, jan@multipathcom.com, for Toshiba America Electronic Components, Inc.; or Rebecca Bueno of Toshiba America Electronic Components, Inc., +1-949-623-3099 rebecca.bueno@taec.toshiba.com
