Press Release Summary:
Part of NexFET™ product line, 25 V Model CSD16570Q5B supports max Rdson of 0.59 mΩ, while 30 V Model CSD17570Q5B achieves max Rdson of 0.60 mΩ. Both are housed in 5 x 6 mm QFN package and are suitable for hot swap and ORing applications. For low-voltage battery-powered applications, 12 V Model CSD13383F4 comes in 0.6 x 1.0 mm FemtoFET™ package with Rdson of 44 mΩ at 4.5 V.
Original Press Release:
TI's NexFET(TM) N-channel Power MOSFETs Achieve Industry's Lowest Resistance
Lowest Rdson 25-V and 30-V devices in 5 mm by 6 mm QFN package
DALLAS -- Texas Instruments (TI) (NASDAQ: TXN) today introduced 11 new N-channel power MOSFETs to its NexFET(TM) product line, including the 25-V CSD16570Q5B and 30-V CSD17570Q5B for hot swap and ORing applications with the industry's lowest on-resistance (Rdson) in a QFN package. In addition, TI's new 12-V FemtoFET(TM) CSD13383F4 for low-voltage battery-powered applications achieves the lowest resistance at 84-percent below competitive devices in a tiny 0.6 mm by 1 mm package. For more information, samples or a reference design, visit www.ti.com/csd16570q5b-pr.
The CSD16570Q5B and CSD17570Q5B NexFET MOSFETs deliver higher power conversion efficiencies at higher currents, while ensuring safe operation in computer server and telecom applications. For instance, the 25-V CSD16570Q5B supports a maximum of 0.59 milliohms of Rdson, while the 30-V CSD17570Q5B achieves a maximum of 0.69 milliohms of Rdson. Read a blog, "Power MOSFET safe operating area (SOA) curves for designing with hot-swap and ORing FET controllers." Download a 12-V, 60-A hot swap reference design featuring TI's CSD17570Q5B NexFET.
TI's new CSD17573Q5B and CSD17577Q5A can be paired with the LM27403 for DC/DC controller applications to form a complete synchronous buck converter solution. The CSD16570Q5B and CSD17570Q5B NexFET power MOSFETs can be paired with a TI hot swap controller such as the TPS24720. Download the application note "Robust Hot Swap Designs" to understand how a transistor is selected as a pass element and how to ensure safe operation under all possible conditions.
New NexFET products and key features
Rdson max (mohm)
Qg (4.5) (nC)
QFN 5x6 (Q5B)
Low Side Buck/ORing/Hot Swap
QFN 5x6 (Q5B)
Low Side Buck
QFN 3.3x3.3 (Q3)
QFN 5x6 (Q5B)
High Side Buck
QFN 5x6 (Q5A)
QFN 3.3x3.3 (Q3A)
Dual Independent FET
QFN 2x2 (Q2)
FemtoFET 0.6x1.0 (0402)
Availability, packaging and pricing
Available in volume now from TI and its authorized distributors, the products range in price from US$0.10 for the FemtoFET CSD13383F4 to US$1.08 for the CSD17670Q5B and CSD17570Q5B, all in 1,000-unit quantities.
About TI'S NexFET power MOSFETs
TI's NexFET power MOSFETs improve energy efficiency in high-power computing, networking, industrial and power supplies. These high-frequency, high-efficiency analog power MOSFETs give system designers access to the most advanced DC/DC power conversion solutions available.
Find out more about TI's power management portfolio:
-- Download the NexFET power MOSFET selection guide.
-- Design a complete power management system online with TI's WEBENCH Power Designer.
-- Search for solutions, get help and share knowledge in the NexFET power MOSFET forum in the TI E2E(TM) Community.
-- Download power reference designs from the TI Designs reference design library.
About Texas Instruments
Texas Instruments Incorporated is a global semiconductor design and manufacturing company that develops analog ICs and embedded processors. By employing the world's brightest minds, TI creates innovations that shape the future of technology. TI is helping more than 100,000 customers transform the future, today. Learn more at www.ti.com.
WEBENCH is a registered trademark and TI E2E, NexFET and FemtoFET are trademarks of Texas Instruments. All other trademarks belong to their respective owners.