Multi-Level Cell NAND Flash Memory offers 2 GB capacity.
Press Release Summary:
Suited for solid-state file storage applications, TH58NVG4D4CTG achieves 2 GB storage in one TSOP by stacking two 70 nm Toshiba 8 Gb MLC (Multi-Level Cell) NAND chips. Component supports write speed of 6 MB/sec has page size of 2112 bytes, and comes in 2028M x 8 bits (16 Gb) configuration. Its 12 x 20 x 1.2 mm, 48-pin, Lead(Pb)-free, SMT package is available with tin-silver or tin-copper plating and is RoHS-compliant.
Original Press Release:
Toshiba Announces 16-Gigabit Multi-Level Cell NAND Flash Component Using 70-Nanometer Process Technology
Highest Density Commercially Available MLC NAND Flash Component Provides 2-Gigabyte Data Storage Capacity
See TAEC Memory Products at CES in Toshiba Booths #12814 and #12827 in LVCC Central Hall
LAS VEGAS, Jan. 5 / -- Continuing its commitment to a leading-edge NAND flash roadmap to enable increasingly high density devices for consumer applications, Toshiba America Electronic Components, Inc. (TAEC)* today announced the availability of a 16-gigabit(1) (Gb) multi-level cell (MLC) NAND flash memory component developed by Toshiba Corp. (Toshiba). The new 16Gb NAND Flash part, designated TH58NVG4D4CTG, achieves 2 gigabytes(2) (GB) of storage in a single thin, small-outline package (TSOP) by stacking two 70nm Toshiba 8Gb MLC NAND chips. The new part is ideal for solid-state file storage applications including audio players, USB drives, memory cards, streaming audio/video equipment and other applications requiring high-density embedded memory at an attractive cost per bit.
"Our 16Gb NAND TSOP is based on the Toshiba 8Gb MLC NAND part which features the industry's highest density in a single die NAND chip, which is achieved by storing 2 bits per cell. As a result, Toshiba is able to offer two-gigabyte storage capacity by stacking only 2 die in a TSOP package," said Brian Kumagai, business development manager, NAND Flash, for TAEC.
The new 16Gb memory part is based on the Toshiba TC58NVG3D4CTG 8Gb MLC NAND, which maximizes performance by using fast writing circuit techniques to reduce data write times and supporting a fast write speed of 6-megabytes (MB) per second(3). The 8Gb NAND chips, co-developed by Toshiba and SanDisk Corp, are now in full production on 70nm production lines in an advanced wafer fabrication facility at Toshiba Yokkaichi Works run by Flash Partners, Inc., a joint venture of Toshiba and SanDisk.
The new parts are offered in Lead(Pb)-Free(4) surface mount packages with tin-silver (Sn-Ag) or tin-copper (Sn-Cu) Lead(Pb)-Free plating and are intended to be compatible(5) with the requirements of the European Union's Restriction of Hazardous Substances (RoHS) Directive(6), which will take effect in July 2006.
Product Specifications
Part Number: TH58NVG4D4CTG
Configuration: 2028M x 8 bits (16Gb)
Power Supply: VCC = 2.7V to 3.6V
Page Size: 2112 bytes
Max. Programming Speed: 6MB/Second
Package: 48-pin TSOP Type 1
Measures 12 x 20 x 1.2 millimeters
Pricing and Availability
Samples of the 16Gb Toshiba TH58NVG4D4CTG, 16Gb NAND Flash will be available in January 2006, priced at $79.00 each.
NAND Flash Background
As a recognized pioneer in flash technology, Toshiba was a principal innovator of NAND- and NOR-type Flash technology in the 1980's. Toshiba maintains leadership in Flash technology today, with a complete line of NAND memory in densities from 64megabits(7) (Mb) to 16Gb to meet various application requirements. NAND Flash has become one of the leading technologies for solid state storage applications because of its high-speed programming capability, high-speed erasing, and low cost. The sequential nature (serial access) of NAND-based Flash memory provides notable advantages for these block-oriented data storage applications. Toshiba's NAND Flash memory products are optimized for general solid state storage, image file storage and audio for applications such as solid state disk drives, digital cameras, audio appliances, set-top boxes and industrial storage.
About TAEC
Combining quality and flexibility with design engineering expertise, TAEC brings a breadth of advanced, next-generation technologies to its customers. This broad offering includes memory and flash memory-based storage solutions, a broad range of discrete devices, displays, medical tubes, ASICs, custom SOCs, microprocessors, microcontrollers and wireless components for the computing, wireless, networking, automotive and digital consumer markets. TAEC is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corp. (Toshiba), Japan's second largest semiconductor manufacturer and the world's ninth largest integrated manufacturer of electric and electronic equipment. In almost 130 years of operation, Toshiba has recorded numerous firsts and made many valuable contributions to technology and society. For additional company and product information, please visit TAEC's website at chips.toshiba.com. For technical inquiries, please e-mail Tech.Questions@taec.toshiba.com.
All trademarks and tradenames held within are the properties of their respective holders.
(1) When used herein in relation to memory density, gigabit and/or Gb means 1,024x1,024x1,024 = 1,073,741,824 bits. Usable capacity may be less. For details, please refer to specifications.
(2) When used herein in relation to memory density, gigabyte and/or GB means 1,024x1,024x1,024 = 1,073,741,824 bytes. Usable capacity may be less. For details, please refer to specifications.
(3) Read and write speed may vary depending on the read and write conditions, such as devices you use and file sizes you read and/or write. (For purposes of measuring write speed in this context, 1 MB = 1,000,000 bytes).
(4) Toshiba defines "Lead(Pb)-Free" in accordance with current industry standards as no more than 0.1 percent lead(Pb) by weight in homogenous materials. This does not mean that Toshiba products that are labeled "Lead(Pb)-Free" are entirely free of lead(Pb).
(5) Toshiba Semiconductor Company defines "RoHS-Compatible" semiconductor products as products that either (i) contain no more than a maximum concentration value of 0.1% by weight in homogeneous materials for lead, mercury, hexavalent chromium, polybrominated biphenyls (PBBs) and polybrominated diphenyl ethers (PBDEs) and no more than 0.01% by weight in homogenous materials for cadmium; or (ii) fall within one of the stated exemptions set forth in the Annex to the RoHS Directive.
(6) Toshiba Semiconductor Company defines the "RoHS Directive" as the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
(7) When used herein in relation to memory density, megabit and/or Mb means 1,024x1,024 = 1,048,576 bits. Usable capacity may be less. For details, please refer to specifications.
CONTACT: Jan Johnson of MultiPath Communications, +1-714-633-4008, jan@multipathcom.com, for Toshiba America Electronic Components, Inc.; or Rebecca Bueno of Toshiba America Electronic Components, Inc., +1-949-623-3099, rebecca.bueno@taec.toshiba.com
