Press Release Summary:
Designed to operate in frequency range of 2–60 MHz, Model VRF2944 offers 400 W of output power at 50 V supply voltage, while Model VRT3933 delivers 300 W of output power at up to 100 V supply. Four VRF3933 devices with 2 in parallel, and those 2 parallel pairs in push-pull, are capable of launching 1.1 kW with 83 V supply voltage through 4:1 transformer to 50 Ω load. For reliability, nitride passivated chips have gold metallization and gold wire bonds.
Original Press Release:
Microsemi's New Higher Power and Voltage MOSFETs Targeted at RF and Broadband Communications Applications
VRF2944 Offers Industry's Highest Output Power at 50V Supply Voltages
ALISO VIEJO, Calif. -- Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced an expansion of its high-frequency vertical diffusion metal oxide semiconductor (VDMOS) MOSFET product family. The two higher power, higher voltage (V) VRF2944 and VRF3933 are designed to operate in the industrial, scientific and medical (ISM) frequency range of 2-60 megahertz (MHz). Targeted applications include commercial and defense RF power and broadband communications requiring high power and gain without compromising reliability, ruggedness or inter-modulation distortion.
The industry-leading VRF2944 offers 400 watts (W) or 33 percent higher output power at 50V supply voltages than competitive devices, including the SD2933. Microsemi's higher power device allows customers to increase the power of existing systems by this same 33 percent or decrease the dollar per W for their RF power systems. In addition, the gate resistor is integrated on the MOSFET which improves parasitic impedance to maintain the maximum operating frequency at 60MHz. The VRF2944, like Microsemi's previous generation product, the VRF2933, is capable of operating up to 65V supply voltages where a single VRF2944 can deliver 675W of output power.
The VRF3933 is capable of operating up to 100V supply voltages and delivering 300W of output power. The higher voltage MOSFET also gives a higher output impedance, which is easier to match to 50 ohm load. For example, four VRF3933 devices with two in parallel, and those two parallel pairs in push-pull, are capable of launching 1.1 kilowatts (kW) with 83V supply voltage through a 4:1 transformer to a 50 ohm load.
Key features of Microsemi's VRF product family include:
-- Higher voltage than many competitive devices for higher output power: Po is proportional to V(2);
-- Nitride passivated chips for high reliability;
-- Gold metallization and gold wire bonds for improved reliability; and
-- Access to Microsemi's Application Engineering Group for design support.
Packaging and Pricing
Samples of the VRF2944 and VRF3933 are in stock now. For more information or to obtain a sample, contact a local distributor or Microsemi sales representative, or email email@example.com. Additional production information on the VRF2944 can be found at http://www.microsemi.com/document-portal/doc_download/132176-vrf2944-mp-a-pdf and on the VRF3933 at http://www.microsemi.com/document-portal/doc_download/132177-vrf3933-a-pdf.
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance, radiation-hardened and highly reliable analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,000 employees globally. Learn more at www.microsemi.com.
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