IGBT suits 50-400 Hz industrial applications.
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Press Release Summary:
Featuring saturation voltage of 1.1 V typ, Model FGH30N60LSD is designed to optimize system efficiency while meeting low-frequency requirements. IGBT can be combined with FCH47N60F SuperFET(TM) FRFET®, which offers operating frequency of up to 250 kHz an on-resistance of 0.062 W (typ), for additional energy efficiency in applications that use both low- and high-frequency switches. MOS-gated switching device also integrates fast-recovery diode.
Original Press Release:
Fairchild's 600V/30A IGBT Improves Energy Efficiency in Low-Frequency (50 ~ 400Hz) Industrial Applications
SAN JOSE, Calif.-August 23, 2007-Fairchild Semiconductor's (NYSE: FCS) new 600V/30A IGBT, the FGH30N60LSD, addresses the need for low conduction losses in low-frequency (50~400Hz) industrial applications such as solar inverters, welding machines and uninterruptible power supplies (UPS). Featuring extremely low saturation voltage (VCE(sat) , Typ. = 1.1 V), the FGH30N60LSD is specially designed to increase system efficiency while meeting low-frequency requirements. For further energy efficiency in industrial applications which are using both low frequency switches and high switching frequency switches such as solar inverters, this IGBT can be combined with Fairchild's FCH47N60F SuperFET(TM) FRFET®, an advanced MOSFET that offers high operating frequency of up to 250kHz and extremely low on-resistance (RDS(on), Typ. = 0.062 Ohms).
"Energy efficiency is one of the primary concerns of today's industrial applications such as solar inverters, welding machines and UPSs," says Donghye Cho, director of Fairchild's High Voltage Functional Power Solutions. "By tailoring our new IGBT to achieve extremely low conduction loss and then combining this product with our SuperFET MOSFET offering high switching frequency and low RDS(on), Fairchild demonstrates its ability to solve complex design challenges."
The FGH30N60LSD is a MOS-gated high-voltage switching device that combines the best features of MOSFETs and bipolar transistors. This device integrates a fast-recovery diode (FRD) to help designers reduce component count while further ensuring system reliability. Uniting SuperFET technology with a lifetime killing process, our SuperFET FRFET offers improved body-diode characteristics, which enable operation at high switching frequency, extremely low on-resistance, excellent turn-off dv/dt immunity and low EMI. All of these features increase system efficiency and reliability.
Fairchild's FGH30N60LSD utilizes lead-free (Pb-free) terminals and has been characterized for moisture sensitivity in accordance with the Pb-free reflow requirements of the joint IPC/JEDEC standard J-STD-020. All of Fairchild's products are designed to meet the requirements of the European Union's Directive on the restriction of the use of certain substances (RoHS).
Package: TO-247
Price (each, 1000 pcs): US$ 8.70
Availability: samples available now
Delivery: 12 weeks ARO
Contact Information: To contact Fairchild Semiconductor about this product, please go to: http://www.fairchildsemi.com/cf/sales_contacts/.
