High-Power GaN HEMTs serve C-Band applications.

Press Release Summary:




Rated for 200 W continuous wave (CW) and 4.4–5.0 GHz operation, CGHV50200F gallium nitride (GaN) high electron mobility transistor (HEMT) suits tropospheric scatter (troposcatter) communications applications. These 50 Ω, internally matched units, which exhibit 180 W typ PSAT, 11.5 dB typ power gain, and 48% typ power efficiency, allow solid-state power amplifiers (SSPAs) to replace traveling wave tube (TWT) amplifiers in satellite broadcasting systems.



Original Press Release:



Cree Introduces Highest Power C-Band GaN HEMTs



Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, has introduced the industry's first GaN transistor for tropospheric scatter (troposcatter) communications applications rated for 200W continuous wave (CW) and 4.4—5.0GHz operation. The new CGHV50200F GaN high electron mobility transistor (HEMT) is also the industry's highest power transistor for C-Band applications, such as satellite communications.



The new 50 Ohm, internally matched 200W GaN HEMTs deliver high power, high efficiency, high gain, and wide bandwidth performance. Exhibiting 180W typical PSAT, 11.5dB typical power gain and 48% typical power efficiency, these transistors finally allow solid state power amplifiers (SSPAs) to effectively replace traveling wave tube (TWT) amplifiers in satellite broadcasting systems. Featuring a smaller, lighter footprint and a significantly longer lifespan than TWTs, GaN-enabled SSPAs can reduce overall system weight and mitigate both operational and replacement costs.



The new 200W CGHV50200F GaN HEMTs are supplied in a ceramic/metal flange package (type #440215) measuring 23.75—24.26mm (0.935—0.955") by 23.01mm (0.906") including the gain and drain or 17.25—17.55mm (0.679—0.691") without.



For more information about Cree's new 200W C-Band GaN HEMT, please visit http://www.cree.com/RF/Products/Satellite-Communications/Packaged-Discrete-Transistors/CGHV50200F to access product datasheets. To purchase parts or demonstration amplifier circuits, please visit Digi-Key or Mouser. For further information, please visit www.cree.com/rf and the Cree RF YouTube video stream or contact Sarah Miller, Marketing, Cree RF Components, at sarah_miller@cree.com or 919-407-5302.



Christine Stieglitz

PR Executive 

BtB Marketing Communications

christine.stieglitz@btbmarketing.com

900 Ridgefield Drive

Suite 270

Raleigh, NC 27609 

919.872.8172



Cree® is a registered trademark of Cree, Inc.

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