GaN Systems Showcases Gallium Nitride Power Semiconductors at iPower 2013 - Presents Paper on Harnessing Performance Gains in the Packaging Industry

Leading experts discuss latest power electronic technologies at University of Warwick 27-28 November

OTTAWA, Ontario -- GaN Systems Inc, a leading developer of gallium nitride power switching semiconductors, is exhibiting and presenting a technical paper at iPower 2013 Conference and Exhibition, Warwick University on 27 and 28 November. Organised by IMAPS-UK and NMI in conjunction with the University’s Electronics, Power and Microsystems Research Group, iPower 2013 brings together leading experts from industry, science, supply and academia to focus on the latest developments in power electronic products and technologies.

The second day of the Conference is devoted to the packaging industry and the opportunities presented by higher power, faster semiconductors for power conversion products. Geoff Haynes, VP Business Development, is presenting a paper entitled “Breaking the Bonds” that highlights the extreme performance gains in switching speed and potential junction operating temperature GaN switches bring to the industry. He will explore and discuss overcoming the challenges these new devices present and how to harness them to greatest effect, achieving savings through intelligent use of increased power during peak production.

At the exhibition running alongside the conference, GaN Systems will showcase its gallium nitride high power transistors for clean power conversion applications based on its proprietary Island Technology™. These new devices have exceptionally low on-resistance and negligible charge storage, so their switching efficiency performance is far superior to current silicon semiconductors. GaN semiconductors bring dramatic benefits to switching power supplies, inverters, hybrid and electric vehicles, battery management and power factor correction.

About GaN Systems

GaN Systems is the first place systems designers go to realize all of the benefits of gallium nitride in their power conversion and control applications. To overcome silicon’s limitations in switching speed, temperature, voltage and current, the company develops the most complete range of gallium nitride power switching solutions for a variety of markets. Its unique Island Technology™ addresses today’s cost, performance, and manufacturability related challenges of gallium nitride resulting in devices that are up to four times smaller and four times more efficient than traditional design approaches. The Company also leverages existing multi]sourced manufacturing processes due to its transportable, fabless model, and through additional innovations, makes it easy to incorporate gallium nitride into any design. GaN Systems is run by a seasoned semiconductor team with decades of industry experience and a track record of repeated success. The Company stands to do more for gallium nitride adoption in power conversion than any other. For more information, please visit:

More Information

Tracy Jones

Corporate Communications

GaN Systems

+1 (613) 686-1996 ext. 149 (office)

For press enquiries:

Nick Foot

PR Director

BWW Communications

Tel.: +44 1491-636393


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