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Thyristors suit medium voltage applications.
Manufactured on 100 mm diameter silicon wafer, 5.2 kV thyristor incorporates distributed gate architecture for di/dt capability. Unit has RMS current rating of 6,900 A and is encapsulated in fully hermetic, pressure contact package. Rated at 4,500 and 5,200 V respectively, Models K3503FC450 and K3503FC520 are encapsulated in 35 mm thick packages. Applications include DC drives, soft-starts, HVDC,...
Read More »Thyristors suit medium voltage applications.
Manufactured on 100 mm diameter silicon wafer, 5.2 kV thyristor incorporates distributed gate architecture for di/dt capability. Unit has RMS current rating of 6,900 A and is encapsulated in fully hermetic, pressure contact package. Rated at 4,500 and 5,200 V respectively, Models K3503FC450 and K3503FC520 are encapsulated in 35 mm thick packages. Applications include DC drives, soft-starts, HVDC,...
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